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    HIGH THROUGHPUT LOW TOPOGRAPHY COPPER CMP PROCESS
    6.
    发明申请
    HIGH THROUGHPUT LOW TOPOGRAPHY COPPER CMP PROCESS 审中-公开
    高通量低地层铜沉积工艺

    公开(公告)号：US20090057264A1

    公开(公告)日：2009-03-05

    申请号：US12201370

    申请日：2008-08-29

    申请人： DAVID H. MAI ,  Stephen Jew ,  Shih-Haur Walters Shen ,  Zhihong Wang

    发明人： DAVID H. MAI ,  Stephen Jew ,  Shih-Haur Walters Shen ,  Zhihong Wang

    IPC分类号： H01B13/00

    CPC分类号： H01L21/3212 ,  B24B37/042

    摘要： Embodiments described herein generally provide a method for processing metals disposed on a substrate in a chemical mechanical polishing system. The apparatus advantageously facilitates efficient bulk and residual conductive material removal from a substrate. In one embodiment a method for chemical mechanical polishing (CMP) of a conductive material disposed on a substrate is provided. A substrate comprising a conductive material disposed over an underlying barrier material is positioned on a first platen containing a first polishing pad. The substrate is polished on a first platen to remove a bulk portion of the conductive material. A rate quench process is performed in order to reduce a metal ion concentration in the polishing slurry. The substrate is polished on the first platen to breakthrough the conductive material exposing a portion of the underlying barrier material.

    摘要翻译： 本文描述的实施方案通常提供用于在化学机械抛光系统中处理设置在基底上的金属的方法。 该装置有利地有助于从衬底去除有效的体积和残余导电材料。 在一个实施例中，提供了一种用于设置在基板上的导电材料的化学机械抛光（CMP）的方法。 包括设置在下面阻挡材料上方的导电材料的基板被定位在包含第一抛光垫的第一压板上。 将衬底在第一压板上抛光以除去导电材料的主体部分。 进行速率骤冷处理以减少抛光浆料中的金属离子浓度。 衬底在第一压板上被抛光以穿透暴露一部分下面的阻挡材料的导电材料。

    USE OF PAD CONDITIONING IN TEMPERATURE CONTROLLED CMP
    7.
    发明申请
    USE OF PAD CONDITIONING IN TEMPERATURE CONTROLLED CMP 有权
    在温度控制CMP中使用焊盘调节

    公开(公告)号：US20100081360A1

    公开(公告)日：2010-04-01

    申请号：US12240615

    申请日：2008-09-29

    申请人： Kun Xu ,  Thomas H. Osterheld ,  Jimin Zhang ,  Stephen Jew

    发明人： Kun Xu ,  Thomas H. Osterheld ,  Jimin Zhang ,  Stephen Jew

    IPC分类号： B24B49/14 ,  B24B1/00 ,  B24B49/16

    CPC分类号： B24B37/042 ,  B24B37/015 ,  B24B49/16

    摘要： A method and apparatus for temperature control for a chemical mechanical polishing process is provided. In one embodiment, the method comprises polishing the substrate with a surface of a polishing pad assembly, measuring a real-time temperature of the surface of the polishing pad assembly, determining whether the real-time temperature of the surface of the polishing pad assembly is within a predetermined processing temperature range, and contacting the surface of the polishing pad assembly with a pad conditioner to adjust the temperature of the surface of the polishing pad assembly to fall within the predetermined temperature range.

    摘要翻译： 提供了一种用于化学机械抛光工艺的温度控制方法和装置。 在一个实施例中，该方法包括用抛光垫组件的表面抛光衬底，测量抛光垫组件的表面的实时温度，确定抛光垫组件的表面的实时温度是否为 在预定的处理温度范围内，并且将抛光垫组件的表面与衬垫调节器接触，以调节抛光垫组件的表面的温度落在预定温度范围内。

    Use of pad conditioning in temperature controlled CMP
    8.
    发明授权
    Use of pad conditioning in temperature controlled CMP 有权
    在温度控制CMP中使用焊盘调节

    公开(公告)号：US08292691B2

    公开(公告)日：2012-10-23

    申请号：US12240615

    申请日：2008-09-29

    申请人： Kun Xu ,  Thomas H. Osterheld ,  Jimin Zhang ,  Stephen Jew

    发明人： Kun Xu ,  Thomas H. Osterheld ,  Jimin Zhang ,  Stephen Jew

    IPC分类号： B24B49/14

    CPC分类号： B24B37/042 ,  B24B37/015 ,  B24B49/16

    摘要： A method and apparatus for temperature control for a chemical mechanical polishing process is provided. In one embodiment, the method comprises polishing the substrate with a surface of a polishing pad assembly, measuring a real-time temperature of the surface of the polishing pad assembly, determining whether the real-time temperature of the surface of the polishing pad assembly is within a predetermined processing temperature range, and contacting the surface of the polishing pad assembly with a pad conditioner to adjust the temperature of the surface of the polishing pad assembly to fall within the predetermined temperature range.

    摘要翻译： 提供了一种用于化学机械抛光工艺的温度控制方法和装置。 在一个实施例中，该方法包括用抛光垫组件的表面抛光衬底，测量抛光垫组件的表面的实时温度，确定抛光垫组件的表面的实时温度是否为 在预定的处理温度范围内，并且将抛光垫组件的表面与衬垫调节器接触，以调节抛光垫组件的表面的温度落在预定温度范围内。

    TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING
    9.
    发明申请
    TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING 审中-公开
    化学机械抛光温度控制

    公开(公告)号：US20100279435A1

    公开(公告)日：2010-11-04

    申请号：US12433559

    申请日：2009-04-30

    申请人： Kun Xu ,  Jimin Zhang ,  Stephen Jew ,  Thomas H. Osterheld

    发明人： Kun Xu ,  Jimin Zhang ,  Stephen Jew ,  Thomas H. Osterheld

    IPC分类号： H01L21/66 ,  C23F1/08

    CPC分类号： B24B55/02 ,  B24B37/015

    摘要： A chemical mechanical polishing apparatus including a platen for holding a pad having a polishing surface, a subsystem for holding a substrate and the polishing surface together during a polishing step, and a temperature sensor oriented to measure a temperature of the polishing surface, wherein the subsystem accepts the temperature measured by the sensor and is programmed to vary a polishing process parameter in response to the measured temperature. In an aspect, a chemical mechanical polishing apparatus having a platen for holding a pad having a polishing surface, a fluid delivery system for transporting a fluid from a source to the polishing surface, and a temperature controller which during operation controls the temperature of the fluid transported by the delivery system.

    摘要翻译： 一种化学机械抛光装置，包括用于在抛光步骤期间将用于保持具有抛光表面的焊盘的垫板，用于保持基板和抛光表面的子系统以及用于测量抛光表面的温度的温度传感器，其中所述子系统 接受由传感器测量的温度，并被编程以响应于测量的温度来改变抛光工艺参数。 一方面，一种具有用于保持具有抛光表面的焊盘的压板的化学机械抛光装置，用于将流体从源传送到抛光表面的流体输送系统以及在操作期间控制流体温度的温度控制器 由运送系统运输。

    Control Of Overpolishing Of Multiple Substrates On the Same Platen In Chemical Mechanical Polishing
    10.
    发明申请
    Control Of Overpolishing Of Multiple Substrates On the Same Platen In Chemical Mechanical Polishing 审中-公开
    在化学机械抛光相同的台板上多台基板的抛光控制

    公开(公告)号：US20140024293A1

    公开(公告)日：2014-01-23

    申请号：US13553209

    申请日：2012-07-19

    申请人： Jimin Zhang ,  Zhihong Wang ,  David H. Mai ,  Ingemar Carlsson ,  Stephen Jew ,  Boguslaw A. Swedek

    发明人： Jimin Zhang ,  Zhihong Wang ,  David H. Mai ,  Ingemar Carlsson ,  Stephen Jew ,  Boguslaw A. Swedek

    IPC分类号： B24B49/00 ,  B24B49/12 ,  B24B49/10

    CPC分类号： B24B37/013 ,  B24B49/10 ,  B24B49/12

    摘要： A polishing method includes simultaneously polishing a first substrate and a second substrate on the same polishing pad, storing a default overpolishing time, determining first and second polishing endpoint times of the first and substrates with the in-situ monitoring system, determining a difference between the first and second polishing endpoint times, and determining whether the difference exceeds a threshold. If the difference is less than the threshold, then an overpolishing stop time is calculated and polishing of the first substrate and the second substrates is halted simultaneously at the overpolishing stop time. If the difference is greater than the threshold, then first and second overpolishing stop times that equal the first and second endpoint times plus the default overpolishing time are calculated, and polishing of the first and second substrates is halted at the first and second overpolishing stop times, respectively.

    摘要翻译： 抛光方法包括同时在同一抛光垫上抛光第一基底和第二基底，存储默认的过度抛光时间，用原位监测系统确定第一和第二基底的第一和第二抛光终点时间，确定 第一和第二抛光终点时间，以及确定差异是否超过阈值。 如果差小于阈值，则计算过度抛光停止时间，并且在过度抛光停止时间同时停止第一基板和第二基板的抛光。 如果该差值大于阈值，则计算等于第一和第二终点时间加上默认过度抛光时间的第一和第二过度抛光停止时间，并且在第一和第二过度抛光停止时间停止第一和第二基板的抛光 ， 分别。