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13 条记录 (耗时 0.017 秒)

    One-step synthesis and consolidation of nanophase materials
    2.
    发明授权
    One-step synthesis and consolidation of nanophase materials 有权
    纳米相材料的一步合成和固结

    公开(公告)号：US06200515B1

    公开(公告)日：2001-03-13

    申请号：US09374049

    申请日：1999-08-13

    申请人： Zuhair A. Munir ,  Frederic Charlot ,  Frederic Bernard ,  Eric Gaffet

    发明人： Zuhair A. Munir ,  Frederic Charlot ,  Frederic Bernard ,  Eric Gaffet

    IPC分类号： B22F314

    CPC分类号： C04B35/58092 ,  B22F1/0018 ,  B22F3/23 ,  B22F2999/00 ,  B82Y30/00 ,  C04B35/645 ,  H05B3/0004 ,  B22F3/14 ,  B22F3/105 ,  B22F9/04

    摘要： Solid reaction products with a dense nanocrystalline structure are formed from reactant particles with diameters in the nano-scale range by compacting the particles into a green body, then passing an electric current through the body causing Joule heating sufficient to initiate the reaction to form the reaction product while simultaneously applying pressure to the reacting body to density it to a density approaching the theoretical density of the pure product. Surprisingly, this process results in a reaction product that retains the nanocrystalline structure of the starting materials, despite the fact that a reaction has occurred and the materials have been subjected to highly stringent conditions of electric current, heat and pressure.

    摘要翻译： 具有致密纳米晶体结构的固体反应产物由直径在纳米级范围的反应物颗粒形成，通过将颗粒压实成生坯，然后使电流通过体，引起焦耳加热足以引发反应以形成反应 产物，同时向反应体施加压力以使其密度接近纯产品的理论密度。 令人惊奇的是，尽管发生了反应并且材料已经受到高度严格的电流，热和压力条件的影响，但是该方法产生保留起始材料的纳米晶体结构的反应产物。

    Process for forming one or more substantially pure layers in substrate material using ion implantation
    3.
    发明授权
    Process for forming one or more substantially pure layers in substrate material using ion implantation 失效
    使用离子注入在衬底材料中形成一个或多个基本上纯的层的工艺

    公开(公告)号：US5124174A

    公开(公告)日：1992-06-23

    申请号：US625340

    申请日：1990-12-11

    申请人： Ronald G. Musket ,  David W. Brown ,  Zuhair A. Munir

    发明人： Ronald G. Musket ,  David W. Brown ,  Zuhair A. Munir

    IPC分类号： C23C14/48 ,  C23C14/58

    CPC分类号： C23C14/5806 ,  C23C14/48 ,  C23C14/58 ,  C23C14/584 ,  C23C14/5873

    摘要： A process is disclosed for forming a substantially pure monocrystalline layer of an implantable element in a monocrystalline substrate material by (a) selecting an implantable element and a monocrystalline substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation.Also disclosed is an article made by the process.

    摘要翻译： 公开了一种用于在单晶衬底材料中形成基本上纯的可植入元件的单晶层的工艺，方法是通过（a）选择可植入元件和待植入的单晶衬底材料，其在待使用的温度下具有有限的相互溶解度 彼此之间不形成中间阶段; （b）将足够数量的可植入元件植入衬底材料中以允许在衬底材料中形成期望的基本上纯的可植入元件层; 和（c）对注入的衬底材料进行退火以形成所需的层。 如果在植入期间形成所需的层，则可能不需要退火步骤。 还披露了由该方法制成的文章。

    Combustion synthesis of boride and other composites
    4.
    发明授权
    Combustion synthesis of boride and other composites 失效
    硼化物和其他复合材料的燃烧合成

    公开(公告)号：US4879262A

    公开(公告)日：1989-11-07

    申请号：US225413

    申请日：1988-07-28

    申请人： Danny C. Halverson ,  Beverly Y. Lum ,  Zuhair A. Munir

    发明人： Danny C. Halverson ,  Beverly Y. Lum ,  Zuhair A. Munir

    IPC分类号： C04B35/563 ,  C04B35/58 ,  C04B35/65 ,  C04B38/00 ,  C04B41/51

    CPC分类号： C04B35/58071 ,  C04B35/563 ,  C04B35/651 ,  C04B38/0025 ,  C04B41/009 ,  C04B41/5155 ,  C04B2111/00922

    摘要： A self-sustaining combustion synthesis process for producing hard, tough, lightweight B.sub.4 C/TiB.sub.2 composites is based on the thermodynamic dependence of adiabatic temperature and product composition on the stoichiometry of the B.sub.4 C and TiB.sub.2 reactants. For lightweight products the composition must be relatively rich in the B.sub.4 C component. B.sub.4 C-rich composites are obtained by varying the initial temperature of the reactants. The product is hard, porous material whose toughness can be enhanced by filling the pores with aluminum or other metal phases using a liquid metal infiltration process. The process can be extended to the formation of other composites having a low exothermic component.

    摘要翻译： 基于绝热温度和产物组成对B4C和TiB2反应物的化学计量的热力学依赖性，用于生产硬质，坚韧，轻质的B4C / TiB2复合材料的自维持燃烧合成方法。 对于轻质产品，组成必须相对丰富的B4C组分。 通过改变反应物的初始温度获得富B4C的复合材料。 该产品是硬质多孔材料，其韧性可以通过使用液态金属渗透方法用铝或其它金属相填充孔来增强。 该方法可以扩展到具有低放热组分的其它复合材料的形成。

    Microalloying of transition metal silicides by mechanical activation and field-activated reaction
    7.
    发明授权
    Microalloying of transition metal silicides by mechanical activation and field-activated reaction 失效
    过渡金属硅化物通过机械活化和场激活反应进行微合金化

    公开(公告)号：US06613276B1

    公开(公告)日：2003-09-02

    申请号：US10124633

    申请日：2002-04-16

    申请人： Zuhair A. Munir ,  Joseph N. Woolman ,  John J. Petrovic

    发明人： Zuhair A. Munir ,  Joseph N. Woolman ,  John J. Petrovic

    IPC分类号： B22F312

    CPC分类号： C22C1/1084 ,  B22F2998/10 ,  C22C1/051 ,  C22C29/18 ,  B22F9/04 ,  B22F3/105 ,  B22F3/23

    摘要： Alloys of transition metal suicides that contain one or more alloying elements are fabricated by a two-stage process involving mechanical activation as the first stage and densification and field-activated reaction as the second stage. Mechanical activation, preferably performed by high-energy planetary milling, results in the incorporation of atoms of the alloying element(s) into the crystal lattice of the transition metal, while the densification and field-activated reaction, preferably performed by spark plasma sintering, result in the formation of the alloyed transition metal silicide. Among the many advantages of the process are its ability to accommodate materials that are incompatible in other alloying methods.

    摘要翻译： 含有一种或多种合金元素的过渡金属硅化物的合金是通过涉及机械活化作为第一阶段的致密化和场致发射反应的两阶段方法制造的。 优选通过高能行星研磨进行的机械活化导致将合金元素的原子并入过渡金属的晶格中，而致密化和场致动反应优选通过放电等离子体烧结来进行， 导致合金化的过渡金属硅化物的形成。 该方法的许多优点之一是其适应与其他合金化方法不相容的材料的能力。

    Centrifugal synthesis and processing of functionally graded materials
    8.
    发明授权
    Centrifugal synthesis and processing of functionally graded materials 失效
    功能梯度材料的离心合成和加工

    公开(公告)号：US6136452A

    公开(公告)日：2000-10-24

    申请号：US32216

    申请日：1998-02-27

    申请人： Zuhair A. Munir ,  Wei Nong Lai ,  Subhash H. Risbud ,  Benjamin J. McCoy

    发明人： Zuhair A. Munir ,  Wei Nong Lai ,  Subhash H. Risbud ,  Benjamin J. McCoy

    IPC分类号： B22D13/00 ,  B22D19/14 ,  B22D25/06 ,  B22F3/23 ,  B22D25/00

    CPC分类号： B22F3/23 ,  B22D13/00 ,  B22D19/14 ,  B22D25/06 ,  B22F2998/00 ,  B22F2999/00 ,  Y10T428/12458

    摘要： A method through which we can synthesize Functionally Graded Materials (FGM). Such materials are made so that their composition changes gradually from one point to another, such as in the example of gradient index (GRIN) optical components. A novel aspect of our method is the imposition of a centrifugal force during the combustion synthesis of composite materials for structural, optical, or electronic applications, with the result that the composition and the particle size of the metallic (or ceramic) component changes continuously and across the thickness of the product. We have prepared such FGM as ZrO.sub.2 +Ni, ZrO.sub.2 +Cu and Al.sub.2 O.sub.3 +Cu.

    摘要翻译： 一种我们可以合成功能分级材料（FGM）的方法。 这样的材料被制成使得它们的组成从一个点逐渐变化到另一个点，例如在梯度折射率（GRIN）光学部件的示例中。 我们的方法的一个新方面是在用于结构，光学或电子应用的复合材料的燃烧合成期间施加离心力，结果是金属（或陶瓷）组分的组成和粒度连续变化， 横跨产品的厚度。 我们制备了如ZrO2 + Ni，ZrO2 + Cu和Al2O3 + Cu这样的FGM。

    Process for forming one or more substantially pure layers in substrate material using ion implantation
    9.
    发明授权
    Process for forming one or more substantially pure layers in substrate material using ion implantation 失效
    使用离子注入在衬底材料中形成一个或多个基本上纯的层的工艺

    公开(公告)号：US4976987A

    公开(公告)日：1990-12-11

    申请号：US391904

    申请日：1989-08-10

    申请人： Ronald G. Musket ,  David W. Brown ,  Zuhair A. Munir

    发明人： Ronald G. Musket ,  David W. Brown ,  Zuhair A. Munir

    IPC分类号： C23C14/48 ,  C23C14/58

    CPC分类号： C23C14/5806 ,  C23C14/48 ,  C23C14/58 ,  C23C14/584 ,  C23C14/5873

    摘要： A process is disclosed for forming a substantially pure layer of an implantable element in a substrate material by (a) selecting an implantable element and a substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation.

    摘要翻译： 公开了一种用于通过（a）选择可植入元件和待注入的衬底材料来形成衬底材料中基本上纯的可植入元件层的工艺，所述可植入元件和待使用的衬底材料在相互之间的相互溶解度有限， 不要彼此形成任何中间阶段; （b）将足够数量的可植入元件植入衬底材料中以允许在衬底材料中形成期望的基本上纯的可植入元件层; 和（c）对注入的衬底材料进行退火以形成所需的层。 如果在植入期间形成所需的层，则可能不需要退火步骤。