公开(公告)号：US20190393375A1

公开(公告)日：2019-12-26

申请号：US16559971

申请日：2019-09-04

Applicant: 1366 TECHNOLOGIES INC.

Inventor： RALF JONCZYK ,  BRIAN D. KERNAN ,  G.D. STEPHEN HUDELSON ,  ADAM M. LORENZ ,  EMANUEL M. SACHS

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/056 ,  H01L31/0216 ,  H01L31/0288

Abstract: A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant can not enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.

公开(公告)号：US20180019365A1

公开(公告)日：2018-01-18

申请号：US15546030

申请日：2015-10-14

Applicant: 1366 TECHNOLOGIES, INC.

Inventor： RALF JONCZYK ,  KERNAN D BRIAN ,  G.D. STEPHEN HUDELSON ,  RICHARD L. WALLACE ,  ADAM M LORENZ

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/0288 ,  H01L31/056

CPC classification number: H01L31/1804 ,  C30B11/002 ,  C30B19/12 ,  C30B28/04 ,  C30B29/06 ,  C30B31/02 ,  C30B31/04 ,  C30B35/002 ,  H01L21/00 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/0288 ,  H01L31/056 ,  H01L31/068 ,  H01L31/182 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant can not enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.

公开(公告)号：US20170051429A1

公开(公告)日：2017-02-23

申请号：US15306787

申请日：2015-04-17

Applicant: 1366 TECHNOLOGIES, INC.

Inventor： EMANUEL M. SACHS ,  RALF JONCZYK ,  ADAM L. LORENZ ,  RICHARD L. WALLACE ,  G.D. STEPHEN HUDELSON

IPC: C30B11/02 ,  C30B29/06 ,  H01L29/06

CPC classification number: C30B11/02 ,  C30B29/06 ,  H01L29/0657 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Semi-conductor wafers with thin and thicker regions at controlled locations may be for Photovoltaics. The interior may be less than 180 microns or thinner, to 50 microns, with a thicker portion, at 180-250 microns. Thin wafers have higher efficiency. A thicker perimeter provides handling strength. Thicker stripes, landings and islands are for metallization coupling. Wafers may be made directly from a melt upon a template with regions of different heat extraction propensity arranged to correspond to locations of relative thicknesses. Interstitial oxygen is less than 6×1017 atoms/cc, preferably less than 2×1017, total oxygen less than 8.75×1017 atoms/cc, preferably less than 5.25×1017. Thicker regions form adjacent template regions having relatively higher heat extraction propensity; thinner regions adjacent regions with lesser extraction propensity. Thicker template regions have higher extraction propensity. Functional materials upon the template also have differing extraction propensities.

Abstract translation: 半导体晶片在受控位置具有较薄和较厚的区域可能适用于光伏发电。 内部可以小于180微米或更薄，至50微米，较厚部分为180-250微米。 薄晶圆具有更高的效率。 较厚的周长提供处理强度。 较厚的条纹，着陆和岛屿用于金属化耦合。 晶片可以直接从熔体制成模板，其中不同热提取倾向的区域布置成对应于相对厚度的位置。 间隙氧小于6×1017原子/ cc，优选小于2×1017，总氧低于8.75×1017原子/ cc，优选小于5.25×1017。 更厚的区域形成具有相对更高的热提取倾向的相邻模板区域; 较薄的区域具有较小的提取倾向。 较厚的模板区域具有较高的提取倾向。 模板上的功能材料也具有不同的提取倾向。