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公开(公告)号：US11281088B2
公开(公告)日：2022-03-22
申请号：US15953580
申请日：2018-04-16
申请人： AGC Inc.
发明人： Hiroyoshi Tanabe
摘要： A reflective mask blank includes a multilayer reflective film, and a pattern film to be partially etched when processing into a mask. The multilayer reflective film and the pattern film are placed on/above a substrate in this order from the substrate side. The pattern film includes an absorber film and a surface reflection enhancing film in this order from the substrate side. The relation of ((n−1)2+k2)1/2>((nABS−1)2+kABS2)1/2+0.03 is satisfied, nABS and kABS being a reflective index and an absorption coefficient of the absorber film at a wavelength of 13.53 nm, respectively, and n and k being a reflective index and an absorption coefficient of the surface reflection enhancing film at a wavelength of 13.53 nm, respectively.
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公开(公告)号：US12038685B2
公开(公告)日：2024-07-16
申请号：US18201705
申请日：2023-05-24
申请人： AGC Inc.
IPC分类号： G03F1/24
CPC分类号： G03F1/24
摘要： A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
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公开(公告)号：US11835852B2
公开(公告)日：2023-12-05
申请号：US17666290
申请日：2022-02-07
申请人： AGC Inc.
发明人： Hiroyoshi Tanabe
摘要： A reflective mask blank includes a multilayer reflective film, and a pattern film to be partially etched when processing into a mask. The multilayer reflective film and the pattern film are placed on/above a substrate in this order from the substrate side. The pattern film includes an absorber film and a surface reflection enhancing film in this order from the substrate side. The relation of ((n−1)2+k2)1/2>((nABS−1)2+kABS2)1/2+0.03 is satisfied, nABS and kABS being a reflective index and an absorption coefficient of the absorber film at a wavelength of 13.53 nm, respectively, and n and k being a reflective index and an absorption coefficient of the surface reflection enhancing film at a wavelength of 13.53 nm, respectively.
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公开(公告)号：US11698580B2
公开(公告)日：2023-07-11
申请号：US17235220
申请日：2021-04-20
申请人： AGC Inc.
IPC分类号： G03F1/24
CPC分类号： G03F1/24
摘要： A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
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公开(公告)号：US11914283B2
公开(公告)日：2024-02-27
申请号：US17658763
申请日：2022-04-11
申请人： AGC INC.
摘要： A reflective mask blank includes a substrate and, on or above the substrate in order, a reflective layer for reflecting EUV light, a protective layer for protecting the reflective layer, and an absorbent layer for absorbing EUV light. The absorbent layer has a reflectance for a wavelength of 13.53 nm of from 2.5% to 10%. A film thickness d of the absorbent layer satisfies a relationship of:
d
M
A
X
-
(
i
×
6
+
1
)
nm
≤
d
≤
d
M
A
X
-
(
i
×
6
-
1
)
nm
where the integer i is 0 or 1, and dMAX is represented by:
d
MAX
(
nm
)
=
13.53
2
n
cos
6
°
{
INT
(
0.58
1
-
n
)
+
1
2
π
(
tan
-
1
(
-
k
1
-
n
)
+
0.64
)
}
where n is a refractive index of the absorbent layer, k is an absorption coefficient of the absorbent layer, and INT(x) is a function of returning an integer value obtained by truncating a decimal part.-
公开(公告)号：US10890842B2
公开(公告)日：2021-01-12
申请号：US16131560
申请日：2018-09-14
申请人： AGC INC.
发明人： Hiroyoshi Tanabe
摘要： A reflective mask blank includes, on/above a substrate in the following order from the substrate side, a reflective layer which reflects EUV light, and an absorber layer which absorbs EUV light. The absorber layer contains Sn as a main component and Ta in an amount of 25 at % or more.
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