公开(公告)号：US20180211823A1

公开(公告)日：2018-07-26

申请号：US15746032

申请日：2015-08-24

Applicant: Daniel SEVERIN ,  Thomas GEBELE ,  Thomas LEIPNITZ ,  Applied Materials, Inc.

Inventor： Daniel SEVERIN ,  Thomas GEBELE ,  Thomas LEIPNITZ

IPC: H01J37/32 ,  H01L21/285 ,  H01J37/34 ,  H01L27/12 ,  C23C14/34 ,  C23C14/00 ,  C23C14/08 ,  C23C14/35

CPC classification number: H01J37/32844 ,  C23C14/0042 ,  C23C14/0063 ,  C23C14/086 ,  C23C14/3464 ,  C23C14/352 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/3405 ,  H01J37/3473 ,  H01J37/3494 ,  H01J2237/0203 ,  H01J2237/182 ,  H01J2237/24585 ,  H01J2237/332 ,  H01L21/2855 ,  H01L27/1262 ,  Y02C20/30

Abstract: A apparatus for vacuum sputter deposition is described. The apparatus includes, a vacuum chamber; three or more sputter cathodes within the vacuum chamber for sputtering material on a substrate; a gas distribution system for providing a processing gas including H2 to the vacuum chamber; a vacuum system for providing a vacuum inside the vacuum chamber; and a safety arrangement for reducing the risk of an oxy-hydrogen explosion, wherein the safety arrangement comprises a dilution gas feeding unit connected to the vacuum system for dilution of the H2-content of the processing gas.

公开(公告)号：US20130247972A1

公开(公告)日：2013-09-26

申请号：US13768761

申请日：2013-02-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Hemant P. MUNGEKAR ,  Lin ZHANG ,  Daniel SEVERIN

IPC: H01L31/18 ,  H01L31/0216

CPC classification number: H01L31/1868 ,  H01L31/02167 ,  Y02E10/50 ,  Y02P70/521

Abstract: Methods of forming a passivation film stack on a surface of a silicon-based substrate are provided. In one embodiment, the passivation film stack includes a silicon nitride layer and an aluminum oxide layer disposed between the silicon nitride layer and the silicon-based substrate. The aluminum oxide layer is deposited such that the aluminum oxide layer has a low hydrogen (H) content less than about 17 atomic % and a mass density greater than about 2.5 g/cm3. The silicon nitride layer is deposited on the aluminum oxide layer such that the silicon nitride layer has a low hydrogen (H) content less than about 5 atomic %, and a mass density greater than about 2.7 g/cm3. Reduced amount of hydrogen content in the aluminum oxide layer and the silicon nitride layer prevents gas bubbles from forming in the layers and at the interface of the passivation film stack that cause the film stack to blister.

Abstract translation: 提供了在硅基基板的表面上形成钝化膜堆叠的方法。 在一个实施例中，钝化膜堆叠包括氮化硅层和设置在氮化硅层和硅基衬底之间的氧化铝层。 沉积氧化铝层使得氧化铝层具有低于约17原子％的低氢（H）含量和大于约2.5g / cm 3的质量密度。 氮化硅层沉积在氧化铝层上，使氮化硅层的氢（H）含量低于约5原子％，质量密度大于约2.7g / cm3。 氧化铝层和氮化硅层中的氢含量的降低可以防止在钝化膜堆叠的层内和界面处形成气泡，导致膜堆叠起泡。