公开(公告)号：US10446423B2

公开(公告)日：2019-10-15

申请号：US15623503

申请日：2017-06-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Jun-Liang Su ,  Karthik Elumalai ,  Eng Sheng Peh ,  Sriskantharajah Thirunavukarasu ,  Dimantha Rajapaksa

IPC: G01B11/14 ,  H01L21/67 ,  G01B11/24 ,  H01L21/673 ,  H01L21/677 ,  G01B11/30

Abstract: Systems, apparatuses and methods for determining a surface profile of a substrate are provided. In one embodiment, a method includes projecting a signal having a vertical component/profile across the surface of the substrate from a plurality of locations along a first side of the substrate, capturing the projected signals at each of a plurality of respective locations across the surface of the substrate and determining a surface profile for the substrate using the captured signals. The process can be automated using a controller having predetermined projection and capture positions along respective sides of the substrate, where a surface profile of the substrate can be automatically determined by the controller using the captured signals.

公开(公告)号：US20210175086A1

公开(公告)日：2021-06-10

申请号：US16709522

申请日：2019-12-10

Applicant: Applied Materials, Inc.

Inventor： Sai Abhinand ,  Michael Sorensen ,  Karthik Elumalai ,  Dimantha Rajapaksa ,  Cheng Sun ,  James S. Papanu ,  Gaurav Mehta ,  Eng Sheng Peh ,  Sri Thirunavukarasu ,  Onkara Korasiddaramaiah

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683 ,  H01L21/82

Abstract: Electrostatic chucks with reduced current leakage and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber. The electrostatic chuck includes a conductive pedestal having a plurality of notches at a circumferential edge thereof. The electrostatic chuck also includes a plurality of lift pins corresponding to ones of the plurality of notches.

公开(公告)号：US10325790B2

公开(公告)日：2019-06-18

申请号：US15811575

申请日：2017-11-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Eng Sheng Peh ,  Sriskantharajah Thirunavukarasu ,  Jun-Liang Su ,  Shoju Vayyapron ,  Karthik Elumalai ,  Dimantha Rajapaksa ,  Arunkumar M Tatti

IPC: H01L21/00 ,  H01L21/67 ,  H05B3/00 ,  H01L21/687 ,  H01L21/683

Abstract: Embodiments of methods and apparatus for correcting substrate deformity are provided herein. In some embodiments, a substrate support includes a base having an interior volume formed by walls extending upward from the base; a plurality of infrared lamps disposed within the interior volume; a support plate disposed above the plurality of infrared lamps, wherein the support plate includes a support surface to support a substrate; and a cover plate disposed atop the support plate and having a central opening corresponding to the support surface and an exhaust portion at a periphery of a top surface of the cover plate, wherein the exhaust portion includes a plurality of perforations fluidly coupling a space above the cover plate with an exhaust conduit formed in the cover plate. Embodiments of a showerhead assembly and processing equipment incorporating the inventive substrate support and showerhead assembly are additionally provided herein.

公开(公告)号：US20230187215A1

公开(公告)日：2023-06-15

申请号：US18106379

申请日：2023-02-06

Applicant: Applied Materials, Inc.

Inventor： Sai Abhinand ,  Michael Sorensen ,  Karthik Elumalai ,  Dimantha Rajapaksa ,  Cheng Sun ,  James S. Papanu ,  Gaurav Mehta ,  Eng Sheng Peh ,  Sri Thirunavukarasu ,  Onkara Korasiddaramaiah

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683 ,  H01L21/82

CPC classification number: H01L21/3065 ,  H01J37/32715 ,  H01L21/6833 ,  H01L21/82 ,  H01J37/32642 ,  H01J2237/3341

Abstract: Electrostatic chucks with reduced current leakage and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber. The electrostatic chuck includes a conductive pedestal having a plurality of notches at a circumferential edge thereof. The electrostatic chuck also includes a plurality of lift pins corresponding to ones of the plurality of notches.

公开(公告)号：US11600492B2

公开(公告)日：2023-03-07

申请号：US16709522

申请日：2019-12-10

Applicant: Applied Materials, Inc.

Inventor： Sai Abhinand ,  Michael Sorensen ,  Karthik Elumalai ,  Dimantha Rajapaksa ,  Cheng Sun ,  James S. Papanu ,  Gaurav Mehta ,  Eng Sheng Peh ,  Sri Thirunavukarasu ,  Onkara Korasiddaramaiah

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683 ,  H01L21/82

Abstract: Electrostatic chucks with reduced current leakage and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber. The electrostatic chuck includes a conductive pedestal having a plurality of notches at a circumferential edge thereof. The electrostatic chuck also includes a plurality of lift pins corresponding to ones of the plurality of notches.