公开(公告)号：US20180223421A1

公开(公告)日：2018-08-09

申请号：US15426102

申请日：2017-02-07

Applicant: APPLIED MATERIALS, INC.

Inventor： XIAODONG WANG ,  RONGJUN WANG ,  HANBING WU

IPC: C23C14/34 ,  C23C14/08 ,  C23C14/18 ,  C23C14/58 ,  H01J37/34

Abstract: Embodiments of a tantalum (Ta) target pasting process for deposition chambers using RF powered processes include pasting at least a portion of the inner surfaces of the process chamber with Ta after using RF sputtering to deposit dielectric material on a wafer. Pressure levels within the process chamber are adjusted to maximize coverage of the Ta pasting layer. The Ta pasting encapsulates the dielectric material that has been inadvertently sputtered on the process chamber inner surfaces such as the shield. Oxygen is then flowed into the process chamber to form a tantalum oxide layer on the Ta pasting layer to further reduce contamination and particle generation.

公开(公告)号：US20180197721A1

公开(公告)日：2018-07-12

申请号：US15402142

申请日：2017-01-09

Applicant: APPLIED MATERIALS, INC.

Inventor： Bharath SWAMINATHAN ,  HANBING WU ,  JOHN MAZZOCCO

IPC: H01J37/32 ,  H01L21/687 ,  C23C14/34 ,  C23C14/50 ,  H01J37/34

Abstract: Embodiments of a method and apparatus for annealing a substrate are disclosed herein. In some embodiments, a substrate support includes a substrate support pedestal having an upper surface to support a substrate and an opposing bottom surface, wherein the substrate support pedestal is formed of a material that is transparent to radiation; a lamp assembly disposed below the substrate support pedestal and having a plurality of lamps configured to heat the substrate; a pedestal support extending through the lamp assembly to support the substrate support pedestal in a spaced apart relation to the plurality of lamps; a shaft coupled to a second end of the pedestal support opposite the first end; and a rotation assembly coupled to the shaft opposite the pedestal support to rotate the shaft, the pedestal support, and the substrate support pedestal with respect to the lamp assembly.

公开(公告)号：US20170211175A1

公开(公告)日：2017-07-27

申请号：US15483520

申请日：2017-04-10

Applicant: APPLIED MATERIALS, INC.

Inventor： ANANTHA K. SUBRAMANI ,  TZA-JING GUNG ,  PRASHANTH KOTHNUR ,  HANBING WU

IPC: C23C14/34 ,  C23C14/35 ,  H01J37/34

CPC classification number: C23C14/3414 ,  C23C14/3407 ,  C23C14/35 ,  H01J37/34 ,  H01J37/3402 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3426 ,  H01J37/345

Abstract: Embodiments of a sputter source for semiconductor process chambers are provided herein. In some embodiments, a sputter source for a semiconductor process chamber may include: a target comprising a magnetic material to be deposited on a substrate, the magnetic material including a front surface where material is to be sputtered and an opposing back surface; and an outer magnet disposed proximate a back surface of the target and arranged symmetrically with respect to a central axis of the target, wherein the target has an annular groove formed in the back surface of the target disposed proximate the outer magnet to reduce a magnetic permeability of a region of the target proximate the outer magnet, wherein the groove is an unfilled v-shaped groove having an inner angle greater than 90 degrees.

公开(公告)号：US20180291500A1

公开(公告)日：2018-10-11

申请号：US15482242

申请日：2017-04-07

Applicant: APPLIED MATERIALS, INC.

Inventor： XIAODONG WANG ,  RONGJUN WANG ,  HANBING WU

IPC: C23C14/54 ,  H01J37/34 ,  C23C14/34 ,  C23C14/08 ,  C23C14/18 ,  H01L43/12 ,  H01L43/10 ,  H01L43/08

Abstract: Methods and apparatus for reducing defects in a workpiece are provided herein. In some embodiments, a sputter deposition target is provided for reducing defects in a workpiece, the target comprising a dielectric compound having a predefined average grain size ranging from approximately 20 μm to 200 μm. In other embodiments, a process chamber is provided, the process chamber comprising a chamber body defining an interior volume, a substrate support to support a substrate within the interior volume, a plurality of targets to be sputtered onto the substrate including at least one dielectric target, wherein the dielectric target comprises a dielectric compound having a predefined average grain size ranging from approximately 20 μm to 200 μm and a shield rotatably coupled to an upper portion of the chamber body and having at least one hole to expose at least one of the plurality of targets to be sputtered.

公开(公告)号：US20180240655A1

公开(公告)日：2018-08-23

申请号：US15890694

申请日：2018-02-07

Applicant: APPLIED MATERIALS, INC.

Inventor： HANBING WU ,  ANANTHA K. SUBRAMANI ,  ASHISH GOEL ,  XIAODONG WANG ,  WEI W. WANG ,  RONGJUN WANG ,  CHI HONG CHING

IPC: H01J37/34 ,  H01L43/12

CPC classification number: H01J37/3441 ,  H01J37/3429 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Methods and apparatus for processing substrates with a multi-cathode chamber. The multi-cathode chamber includes a shield with a plurality of holes and a plurality of shunts. The shield is rotatable to orient the holes and shunts with a plurality of cathodes located above the shield. The shunts interact with magnets from the cathodes to prevent interference during processing. The shield can be raised and lowered to adjust gapping between a target of a cathode and a hole to provide a dark space during processing.