公开(公告)号：US20140053866A1

公开(公告)日：2014-02-27

申请号：US13970176

申请日：2013-08-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Sanjeev BALUJA ,  Alexandros T. DEMOS ,  Kelvin CHAN ,  Juan Carlos ROCHA-ALVAREZ ,  Scott A. HENDRICKSON ,  Abhijit KANGUDE ,  Inna TUREVSKY ,  Mahendra CHHABRA ,  Thomas NOWAK ,  Daping YAO ,  Bo XIE ,  Daemian RAJ

IPC: B08B7/00

CPC classification number: C23C16/4405 ,  B08B7/0021 ,  B08B7/0057 ,  C11D11/0041 ,  C23C16/45565 ,  C23C16/482

Abstract: A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

Abstract translation: 用于UV室的清洁方法包括向腔室中的一个或多个开口提供第一清洁气体，第二清洁气体和净化气体。 第一清洁气体可以是含氧气体，例如臭氧，以除去碳残留物。 第二清洁气体可以是NF3和O2的远程等离子体以除去硅残余物。 UV室可以具有两个UV透明花洒，其与室盖中的UV窗口一起限定靠近UV窗口的气体体积和低于气体体积的分布体积。 吹扫气体可以流过气体体积，同时一个或多个清洁气体流入分配容积以防止清洁气体撞击到UV透明窗口上。

公开(公告)号：US20160296981A1

公开(公告)日：2016-10-13

申请号：US15180514

申请日：2016-06-13

Applicant: Applied Materials, Inc.

Inventor： Sanjeev BALUJA ,  Alexandros T. DEMOS ,  Kelvin CHAN ,  Juan Carlos ROCHA-ALVAREZ ,  Scott A. HENDRICKSON ,  Abhijit KANGUDE ,  Inna TUREVSKY ,  Mahendra CHHABRA ,  Thomas NOWAK ,  Daping YAO ,  Bo XIE ,  Daemian RAJ

IPC: B08B7/00 ,  B08B5/00 ,  C23C16/48 ,  C23C16/44 ,  C23C16/455 ,  B08B9/08 ,  B08B17/02

CPC classification number: C23C16/4405 ,  B08B7/0021 ,  B08B7/0057 ,  C11D11/0041 ,  C23C16/45565 ,  C23C16/482

Abstract: A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

Abstract translation: 用于UV室的清洁方法包括向腔室中的一个或多个开口提供第一清洁气体，第二清洁气体和净化气体。 第一清洁气体可以是含氧气体，例如臭氧，以除去碳残留物。 第二清洁气体可以是NF3和O2的远程等离子体以除去硅残余物。 UV室可以具有两个UV透明花洒，其与室盖中的UV窗口一起限定靠近UV窗口的气体体积和低于气体体积的分布体积。 吹扫气体可以流过气体体积，同时一个或多个清洁气体流入分配容积以防止清洁气体撞击到UV透明窗口上。

公开(公告)号：US20140264059A1

公开(公告)日：2014-09-18

申请号：US14174378

申请日：2014-02-06

Applicant: Applied Materials, Inc.

Inventor： Sanjeev BALUJA ,  Tuan Anh NGUYEN ,  Abhijit KANGUDE ,  Bozhi YANG ,  Amit Kumar BANSAL ,  Inna TUREVSKY ,  Scott A. HENDRICKSON ,  Juan Carlos ROCHA- ALVAREZ ,  Thomas NOWAK

IPC: H01L21/66

CPC classification number: H01L21/67248 ,  H01L21/67115

Abstract: Embodiments of a semiconductor processing chamber described herein include a substrate support, a source of radiant energy opposite the substrate support, a window between the source of radiant energy and the substrate support, a detector sensitive to the radiant energy positioned to detect the radiant energy transmitted by the window, and a detector sensitive to radiation emitted by the substrate positioned to detect radiation emitted by the substrate. The chamber may also include a showerhead. The substrate support may be between the detectors and the window. A second radiant energy source may be included to project energy through the window to a detector. The second radiant energy source may also be located proximate the first radiant energy source and the detectors.

Abstract translation: 本文所述的半导体处理室的实施例包括衬底支撑件，与衬底支撑件相对的辐射能源，在辐射源源与衬底支撑件之间的窗口，对辐射能敏感的检测器，其被定位以检测发射的辐射能 以及对由被定位成检测由衬底发射的辐射的衬底发射的辐射敏感的检测器。 腔室还可以包括喷头。 衬底支撑件可以在检测器和窗口之间。 可以包括第二辐射能源以将能量通过窗口投射到检测器。 第二辐射能量源也可以位于第一辐射能源和检测器附近。

公开(公告)号：US20160289838A1

公开(公告)日：2016-10-06

申请号：US15184675

申请日：2016-06-16

Applicant: Applied Materials, Inc.

Inventor： Amit BANSAL ,  Dale R. DU BOIS ,  Juan Carlos ROCHA-ALVAREZ ,  Sanjeev BALUJA ,  Scott A. HENDRICKSON ,  Thomas NOWAK

IPC: C23C16/56

Abstract: Embodiments of the present invention provide apparatus and methods for performing UV treatment and chemical treatment and/or deposition in the same chamber. One embodiment of the present invention provides a processing chamber including a UV transparent gas distribution showerhead disposed above a substrate support located in an inner volume of the processing chamber, a UV transparent window disposed above the UV transparent gas distribution showerhead, and a UV unit disposed outside the inner volume. The UV unit is configured to direct UV lights towards the substrate support through the UV transparent window and the UV transparent gas distribution showerhead.

Abstract translation: 本发明的实施例提供了用于在相同的室中进行UV处理和化学处理和/或沉积的装置和方法。 本发明的一个实施例提供了一种处理室，其包括设置在位于处理室的内部体积中的基板支撑件上方的UV透明气体分配喷头，设置在UV透明气体分配喷头上方的UV透明窗口，以及设置在UV透明气体分配喷头 在内容之外。 UV单元被配置为通过UV透明窗口和UV透明气体分配喷头将UV光引向基板支撑。

公开(公告)号：US20130344704A1

公开(公告)日：2013-12-26

申请号：US13904468

申请日：2013-05-29

Applicant: Applied Materials, Inc.

Inventor： Mahendra CHHABRA ,  Scott A. HENDRICKSON ,  Sanjeev BALUJA ,  Tsutomu KIYOHARA ,  Juan Carlos ROCHA-ALVAREZ ,  Alexandros T. DEMOS

IPC: H01L21/768

CPC classification number: C23C16/4405 ,  B05D3/066 ,  C23C14/00 ,  C23C16/56 ,  G02B1/00 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/76825

Abstract: Embodiments of the invention provide methods for curing an ultra low-k dielectric film within a UV processing chamber. In one embodiment, the method includes depositing an ultra low-k dielectric layer on a substrate in a deposition chamber, and subjecting the deposited ultra low-k dielectric layer to a UV curing processes in a UV processing chamber. The method includes stabilizing the UV processing chamber by flowing an oxygen gas and a purge gas into the UV processing chamber at a flow ratio of about 1:50000 to about 1:100. While flowing the oxygen-doped purge gas, the substrate is exposed to UV radiation to cure the deposited ultra low-k dielectric layer. The inventive oxygen-doped purge curing process provides an alternate pathway to build silicon-oxygen network of the ultra low-k dielectric material, thereby accelerating cross-linking efficiency without significantly affecting the film properties of the deposited ultra low-k dielectric material.

Abstract translation: 本发明的实施例提供了在UV处理室内固化超低k电介质膜的方法。 在一个实施例中，该方法包括在沉积室中的衬底上沉积超低k电介质层，以及在UV处理室中对沉积的超低k电介质层进行UV固化过程。 该方法包括通过以约1：50000至约1:100的流量比将氧气和净化气体流入UV处理室来稳定UV处理室。 在流过氧掺杂的净化气体的同时，将衬底暴露于UV辐射以固化沉积的超低k电介质层。 本发明的氧掺杂清洗固化方法提供构建超低k电介质材料的硅 - 氧网络的替代途径，从而加速交联效率而不显着影响沉积的超低k电介质材料的膜性质。