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公开(公告)号：US20160296981A1
公开(公告)日：2016-10-13
申请号：US15180514
申请日：2016-06-13
Applicant: Applied Materials, Inc.
Inventor： Sanjeev BALUJA , Alexandros T. DEMOS , Kelvin CHAN , Juan Carlos ROCHA-ALVAREZ , Scott A. HENDRICKSON , Abhijit KANGUDE , Inna TUREVSKY , Mahendra CHHABRA , Thomas NOWAK , Daping YAO , Bo XIE , Daemian RAJ
CPC classification number: C23C16/4405 , B08B7/0021 , B08B7/0057 , C11D11/0041 , C23C16/45565 , C23C16/482
Abstract: A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.
Abstract translation: 用于UV室的清洁方法包括向腔室中的一个或多个开口提供第一清洁气体，第二清洁气体和净化气体。 第一清洁气体可以是含氧气体，例如臭氧，以除去碳残留物。 第二清洁气体可以是NF3和O2的远程等离子体以除去硅残余物。 UV室可以具有两个UV透明花洒，其与室盖中的UV窗口一起限定靠近UV窗口的气体体积和低于气体体积的分布体积。 吹扫气体可以流过气体体积，同时一个或多个清洁气体流入分配容积以防止清洁气体撞击到UV透明窗口上。
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2.发明申请PROCESS OF FILLING THE HIGH ASPECT RATIO TRENCHES BY CO-FLOWING LIGANDS DURING THERMAL CVD 审中-公开在热CVD期间通过共流配置填充高比例斜率的方法公开(公告)号：US20160293483A1
公开(公告)日：2016-10-06
申请号：US15083590
申请日：2016-03-29
Applicant: Applied Materials, Inc.
Inventor： Pramit MANNA , Rui CHENG , Kelvin CHAN , Abhijit Basu MALLICK
IPC: H01L21/768
CPC classification number: H01L21/76846 , C23C16/045 , C23C16/16 , C23C16/342 , C23C16/46 , H01L21/28556 , H01L21/76864 , H01L21/76877
Abstract: Implementations of the present disclosure generally relate to methods for forming thin films in high aspect ratio feature definitions. In one implementation, a method of processing a substrate in a process chamber is provided. The method comprises flowing a boron-containing precursor comprising a ligand into an interior processing volume of a process chamber, flowing a nitrogen-containing precursor comprising the ligand into the interior processing volume and thermally decomposing the boron-containing precursor and the nitrogen-containing precursor in the interior processing volume to deposit a boron nitride layer over at least one or more sidewalls and a bottom surface of a high aspect ratio feature definition formed in and below a surface of a dielectric layer on the substrate.
Abstract translation: 本公开的实施方式一般涉及用于在高纵横比特征定义中形成薄膜的方法。 在一个实施方案中，提供了处理室中的衬底的处理方法。 该方法包括将包含配体的含硼前体流入处理室的内部处理体积，将含有配体的含氮前体流入内部处理体积并热分解含硼前体和含氮前体 在内部处理体积中，在形成在基板上的电介质层的表面中和下方的高纵横比特征定义的至少一个或多个侧壁和底表面上沉积氮化硼层。
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3.发明申请ULTRA-THIN DIELECTRIC DIFFUSION BARRIER AND ETCH STOP LAYER FOR ADVANCED INTERCONNECT APPLICATIONS 有权用于高级互连应用的超薄电介质扩散阻挡层和隔离层公开(公告)号：US20160172239A1
公开(公告)日：2016-06-16
申请号：US14943913
申请日：2015-11-17
Applicant: Applied Materials, Inc.
Inventor： Deenesh PADHI , Yihong CHEN , Kelvin CHAN , Abhijit Basu MALLICK , Alexandros T. DEMOS , Mukund SRINIVASAN
IPC: H01L21/768 , H01L23/532
CPC classification number: H01L23/5329 , C23C16/30 , C23C16/452 , C23C16/45523 , H01L21/0214 , H01L21/02145 , H01L21/02167 , H01L21/02178 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/0234 , H01L21/76834 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
Abstract: Implementations described herein generally relate to the formation of a silicon and aluminum containing layer. Methods described herein can include positioning a substrate in a process region of a process chamber; delivering a process gas to the process region, the process gas comprising an aluminum-containing gas and a silicon-containing gas; activating a reactant gas comprising a nitrogen-containing gas, a hydrogen containing gas, or combinations thereof; delivering the reactant gas to the process gas to create a deposition gas that deposits a silicon and aluminum containing layer on the substrate; and purging the process region. The above elements can be performed one or more times to deposit an etch stop stack.
Abstract translation: 本文描述的实施方案一般涉及形成含硅和铝的层。 本文所述的方法可以包括将基底定位在处理室的处理区域中; 将工艺气体输送到所述工艺区域，所述工艺气体包括含铝气体和含硅气体; 活化包含含氮气体，含氢气体或其组合的反应气体; 将反应气体输送到工艺气体以产生在衬底上沉积含硅和铝的层的沉积气体; 并清除过程区域。 可以执行上述元件一次或多次以沉积蚀刻停止叠层。
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公开(公告)号：US20160096193A1
公开(公告)日：2016-04-07
申请号：US14505553
申请日：2014-10-03
Applicant: Applied Materials, Inc.
Inventor： Kelvin CHAN
Abstract: Embodiments of the disclosure generally related to methods of depositing parylene. The methods include introducing a first precursor into a processing chamber, and photolysing the first precursor into a second precursor using ultraviolet radiation. The second precursor is introduced into second and third regions of the processing chamber, separated by respective first and second showerheads. A substrate is exposed to the second precursor in the third region of the processing chamber to facilitate deposition of a parylene film on the substrate.
Abstract translation: 本公开的实施方案通常涉及沉积聚对二甲苯的方法。 所述方法包括将第一前体引入到处理室中，并且使用紫外线照射将第一前体光解为第二前体。 第二前体被引入处理室的第二和第三区域，由相应的第一和第二淋浴喷头分开。 衬底在处理室的第三区域中暴露于第二前体以便于在衬底上沉积聚对二甲苯膜。
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5.发明申请ENHANCEMENT OF MODULUS AND HARDNESS FOR UV-CURED ULTRA LOW-K DIELECTRIC FILMS 有权UV固化超低K电介质膜的模量和硬度的增强公开(公告)号：US20160020090A1
公开(公告)日：2016-01-21
申请号：US14799988
申请日：2015-07-15
Applicant: Applied Materials, Inc.
Inventor： Kang Sub YIM , Mahendra CHHABRA , Kelvin CHAN , Alexandros T. DEMOS , Priyanka DASH
IPC: H01L21/02
CPC classification number: H01L21/02203 , H01L21/02126 , H01L21/0272 , H01L21/3105
Abstract: Embodiments described herein generally relate to methods for processing a dielectric film on a substrate with UV energy. In one embodiment, a precursor film is deposited on the substrate, and the precursor film includes a plurality of porogen molecules. The precursor film is first exposed to UV energy at a first temperature to initiate a cross-linking process. After a first predetermined time, the temperature of the precursor film is increased to a second temperature for a second predetermined time to remove porogen molecules and to continue the cross-linking process. The resulting film is a porous low-k dielectric film having improved elastic modulus and hardness.
Abstract translation: 本文描述的实施方案一般涉及用UV能量处理衬底上的电介质膜的方法。 在一个实施方案中，前体膜沉积在基底上，并且前体膜包括多个致孔剂分子。 首先在第一温度下将前体膜暴露于UV能以引发交联过程。 在第一预定时间之后，将前体膜的温度升至第二温度第二预定时间以除去致孔剂分子并继续进行交联过程。 所得膜是具有改善的弹性模量和硬度的多孔低k电介质膜。
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Patent Agency Ranking
公开(公告)号：US20190214228A1
公开(公告)日：2019-07-11
申请号：US16244779
申请日：2019-01-10
Applicant: Applied Materials, Inc.
Inventor： Yihong CHEN , Shaunak MUKHERJEE , Kelvin CHAN , Abhijit Basu MALLICK
IPC: H01J37/32 , C23C16/56 , C23C16/455 , C23C16/34
Abstract: Embodiments described herein generally relate to apparatus and methods for reducing hydrogen content of a film. Apparatus may include a chamber body, a support member coupled to a lift mechanism, and a source of hydrogen radicals. The chamber may have a radical conduit coupled with the source of hydrogen radicals at a first end and coupled with the chamber body at a second end. The chamber may have a dual-channel showerhead coupled with a lid rim. The dual-channel showerhead may be disposed between the radical source and the support member. The showerhead may face the support member. Methods may include forming a first film having a hydrogen content of about 1% to about 50% on a substrate in a chamber, and exposing the first film to hydrogen radicals to form a second film having reduced hydrogen content.
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公开(公告)号：US20160233084A1
公开(公告)日：2016-08-11
申请号：US14984599
申请日：2015-12-30
Applicant: Applied Materials, Inc.
Inventor： Yihong CHEN , Kelvin CHAN , Shaunak MUKHERJEE , Abhijit Basu MALLICK
IPC: H01L21/02 , H01L23/532 , H01L21/768
CPC classification number: H01L21/0228 , C23C16/45525 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02214 , H01L21/02216 , H01L21/02219 , H01L21/02274 , H01L21/02307 , H01L21/02312 , H01L21/02315 , H01L21/0337 , H01L21/3105 , H01L21/76831 , H01L21/76834 , H01L23/53228
Abstract: Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of the substrate having terminal hydroxyl groups. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma and H2O soak in order to perform an additional silylation. Further methods include catalyzing the exposed surfaces using a Lewis acid, directionally inactivating the exposed first and second surfaces and deposition of a silicon containing layer on the sidewall surfaces. Multiple plasma treatments may be performed to deposit a layer having a desired thickness.
Abstract translation: 本文公开的实施方式通常涉及形成氧化硅膜的方法。 所述方法可以包括在具有末端羟基的基材的表面上进行甲硅烷基化。 然后使用等离子体和H 2 O浸泡再生衬底表面上的羟基以进行另外的甲硅烷基化。 其它方法包括使用路易斯酸催化暴露的表面，定向灭活暴露的第一和第二表面以及在侧壁表面上沉积含硅层。 可以进行多次等离子体处理以沉积具有所需厚度的层。
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公开(公告)号：US20160138161A1
公开(公告)日：2016-05-19
申请号：US14815283
申请日：2015-07-31
Applicant: Applied Materials, Inc.
Inventor： Yihong CHEN , Shaunak MUKHERJEE , Kelvin CHAN , Abhijit Basu MALLICK
IPC: C23C16/505 , H01J37/32 , C09D1/00
CPC classification number: H01J37/3244 , C23C16/345 , C23C16/45565 , C23C16/45574 , C23C16/56 , H01J37/32357
Abstract: Embodiments described herein generally relate to apparatus and methods for reducing hydrogen content of a film. Apparatus may include a chamber body, a support member coupled to a lift mechanism, and a source of hydrogen radicals. The chamber may have a radical conduit coupled with the source of hydrogen radicals at a first end and coupled with the chamber body at a second end. The chamber may have a dual-channel showerhead coupled with a lid rim. The dual-channel showerhead may be disposed between the radical source and the support member. The showerhead may face the support member. Methods may include forming a first film having a hydrogen content of about 1% to about 50% on a substrate in a chamber, and exposing the first film to hydrogen radicals to form a second film having reduced hydrogen content.
Abstract translation: 本文所述的实施方案一般涉及用于降低膜的氢含量的装置和方法。 设备可以包括室主体，联接到升降机构的支撑构件和氢自由基源。 腔室可以具有在第一端处与氢自由基源耦合的基本导管并且在第二端处与腔体连接。 该腔室可以具有与盖缘耦合的双通道淋浴头。 双通道喷头可以设置在激进源和支撑构件之间。 淋浴头可面向支撑构件。 方法可以包括在室中的基底上形成具有约1％至约50％的氢含量的第一膜，并将第一膜暴露于氢自由基以形成具有降低的氢含量的第二膜。
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公开(公告)号：US20160017487A1
公开(公告)日：2016-01-21
申请号：US14472311
申请日：2014-08-28
Applicant: Applied Materials, Inc.
Inventor： Yihong CHEN , Shaunak MUKHERJEE , Martin Jay SEAMONS , Kelvin CHAN , Abhijit Basu MALLICK , Bok Hoen KIM , Jianhua ZHOU
CPC classification number: C23C16/34 , C23C16/0227 , C23C16/0272 , C23C16/345 , C23C16/36 , C23C16/401 , C23C16/403
Abstract: A method of processing a substrate includes positioning the substrate within a processing zone of a processing chamber and removing an oxide layer from a surface of the substrate by introducing first radicals into the processing zone. The method further includes, after removing the oxide layer, introducing at least one first precursor gas into the processing zone and depositing at least one dielectric layer onto the surface by exposing the at least one first precursor gas to second radicals. After positioning the substrate within the processing zone, the substrate is not removed from the processing chamber until each of removing the oxide layer and depositing the at least one dielectric layer is performed.
Abstract translation: 一种处理衬底的方法包括将衬底定位在处理室的处理区内，并通过将第一自由基引入处理区从衬底的表面去除氧化物层。 该方法还包括在除去氧化物层之后，通过将至少一种第一前体气体暴露于第二自由基将至少一种第一前体气体引入到处理区域中并将至少一个电介质层沉积到表面上。 在将衬底定位在处理区域内之前，基板不会从处理室中移除，直到执行去除氧化物层和沉积至少一个电介质层。
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10.发明申请公开(公告)号：US20150375275A1
公开(公告)日：2015-12-31
申请号：US14758760
申请日：2014-01-31
Applicant: APPLIED MATERIALS, INC.
Inventor： Kelvin CHAN , Alexandros T. DEMOS
CPC classification number: B08B7/0057 , H01L21/02057 , H01L21/02074
Abstract: A method for removing copper oxides from a substrate with one or more copper features is disclosed herein. The method can include positioning a substrate comprising one or more copper and dielectric containing structures in a processing chamber delivering a cleaning gas comprising ammonia to the processing chamber; and exposing the copper and dielectric containing structure to the cleaning gas and ultraviolet (UV) radiation concurrently.
Abstract translation: 本文公开了一种从具有一个或多个铜特征的衬底去除铜氧化物的方法。 该方法可以包括将包含一个或多个铜和电介质的结构物的衬底定位在处理室中，该处理室将包含氨的清洁气体输送到处理室; 同时将铜和电介质结构暴露于清洁气体和紫外线（UV）辐射。
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