公开(公告)号：US20010016674A1

公开(公告)日：2001-08-23

申请号：US09730145

申请日：2000-12-04

申请人： Applied Materials , Inc.

发明人： Ben Pang ,  David Cheung ,  William N. Taylor JR. ,  Sebastien Raoux ,  Mark Fodor

IPC分类号： A62D003/00

CPC分类号： H01J37/32862 ,  B01J19/249 ,  B01J2219/2453 ,  B01J2219/2458 ,  B01J2219/2461 ,  B01J2219/2467 ,  B01J2219/247 ,  B01J2219/2474 ,  B01J2219/2475 ,  B01J2219/2487 ,  B01J2219/2493 ,  B01J2219/2496 ,  C23C16/4405 ,  C23C16/4412 ,  Y02C20/30 ,  Y02P70/605

摘要： An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to form excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.

公开(公告)号：US20040001787A1

公开(公告)日：2004-01-01

申请号：US10342121

申请日：2003-01-13

申请人： APPLIED MATERIALS, INC.

发明人： Peter Porshnev ,  Sebastien Raoux ,  Mike Woolston ,  Christopher L. Aardahl ,  Rick J. Orth ,  Kenneth G. Rappe

IPC分类号： B01J008/00

CPC分类号： B01D53/68 ,  B01D53/70 ,  B01D2259/818

摘要： A substrate processing apparatus has a process chamber and an effluent treatment reactor. The process chamber has a substrate support, a process gas supply, a gas energizer, and an exhaust conduit. The effluent treatment reactor has an effluent inlet to receive effluent from the exhaust conduit of the process chamber, a plasma cell having one or more electrodes electrically connected to a voltage source adapted to electrically bias the electrodes to couple energy to effluent received in the plasma cell, a scrubbing cell coaxially exterior to the plasma cell, the scrubbing cell having a scrubbing fluid inlet to introduce scrubbing fluid into effluent in the scrubbing cell and a scrubbing fluid outlet, and an effluent outlet to release the treated effluent.

摘要翻译： 基板处理装置具有处理室和流出物处理反应器。 处理室具有基板支撑件，工艺气体供应器，气体增压器和排气导管。 流出物处理反应器具有用于接收来自处理室的排气管道的流出物的流出物入口，具有电连接到电压源的一个或多个电极的等离子体电池，该电压源适于电气偏置电极以将能量耦合到在等离子体电池中接收的流出物 洗涤单元，其具有洗涤流体入口，用于将洗涤流体引入洗涤池中的流出物和洗涤流体出口，以及流出物出口以释放经处理的流出物。

公开(公告)号：US20030036272A1

公开(公告)日：2003-02-20

申请号：US10159794

申请日：2002-05-30

申请人： APPLIED MATERIALS, INC.

发明人： Shamouil Shamouilian ,  Canfeng Lai ,  Michael Santiago Cox ,  Padmanabhan Krishnaraj ,  Tsutomu Tanaka ,  Sebastien Raoux ,  Peter I. Porshnev ,  Thomas Nowak

IPC分类号： H01L021/302

CPC分类号： B08B7/0035 ,  B08B7/00 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45593 ,  H01J37/3244 ,  H01J37/32844 ,  H01J2237/335 ,  Y02C20/30

摘要： A method of cleaning a semiconductor fabrication processing chamber involves recirculation of cleaning gas components. Consequently, input cleaning gas is utilized efficiently, and undesirable emissions are reduced. The method includes flowing a cleaning gas to an inlet of a processing chamber, and exposing surfaces of the processing chamber to the cleaning gas to clean the surfaces, thereby producing a reaction product. The method further includes removing an outlet gas including the reaction product from an outlet of the processing chamber, separating at least a portion of the reaction product from the outlet gas, and recirculating a portion of the outlet gas to the inlet of the processing chamber.

摘要翻译： 清洁半导体制造处理室的方法包括清洁气体组分的再循环。 因此，有效地利用输入清洁气体，并且减少不期望的排放。 该方法包括使清洁气体流到处理室的入口，并将处理室的表面暴露于清洁气体以清洁表面，从而产生反应产物。 该方法还包括从处理室的出口除去包括反应产物的出口气体，将至少一部分反应产物与出口气体分离，并将出口气体的一部分再循环到处理室的入口。