公开(公告)号：US20040235292A1

公开(公告)日：2004-11-25

申请号：US10442359

申请日：2003-05-20

申请人： Applied Materials, Inc.

发明人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Hoen Kim ,  Hichem M'Saad ,  Thomas Nowak

IPC分类号： H01L021/4763

CPC分类号： H01L21/76838 ,  H01L21/02074 ,  H01L21/3185 ,  H01L21/32136 ,  H01L21/76828 ,  H01L21/7684

摘要： Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.

公开(公告)号：US20040231795A1

公开(公告)日：2004-11-25

申请号：US10442579

申请日：2003-05-20

申请人： Applied Materials, Inc

发明人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Hoen Kim ,  Hichem M'saad ,  Thomas Nowak

IPC分类号： H05H001/00 ,  C23C016/00 ,  C23F001/00

CPC分类号： H01L21/7684 ,  C23C16/4404 ,  C23G5/00 ,  H01L21/3212 ,  H01L21/76828 ,  H01L21/76838

摘要： Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.

摘要翻译： 由于形成覆盖势垒层而在铜层中产生的不希望的小丘可以通过单独或组合优化各种工艺参数而显着降低。 可以控制第一组工艺参数以对其中沉积阻挡层的处理室进行预处理。 可以控制第二组工艺参数，以在阻挡层沉积之前最小化去除CuO期间铜层暴露的能量。 可以控制第三组工艺参数以最小化除去氧化铜后的热预算。

公开(公告)号：US20030185966A1

公开(公告)日：2003-10-02

申请号：US10115526

申请日：2002-04-02

申请人： Applied Materials, Inc.

发明人： Bok Hoen Kim ,  Nam Le ,  Martin Seamons ,  Ameeta Madhava ,  Michael P. Nault ,  Thomas Nowak ,  Tsutomu Tanaka ,  Moshe Sarfaty

IPC分类号： B05D007/24 ,  B08B007/00 ,  C23C016/22 ,  B05C011/00 ,  B08B009/08

CPC分类号： G05D27/02 ,  B08B7/0035 ,  C23C16/4405 ,  C23C16/52 ,  G01N21/76

摘要： In a substrate processing apparatus, a substrate processing chamber has a substrate support to support a substrate, a gas delivery system to provide an energized cleaning gas to the chamber to clean process residues formed on surfaces in the chamber during processing of the substrate, and an exhaust to exhaust the cleaning gas. A detector monitors a chemiluminescent radiation emitted from about a surface during cleaning of the process residues by the energized cleaning gas and generates a signal in relation to the monitored chemiluminescent radiation. A controller receives the signal and evaluates the signal to determine an endpoint of the cleaning process.

摘要翻译： 在基板处理装置中，基板处理室具有用于支撑基板的基板支撑件，气体输送系统，用于向所述室提供通电的清洁气体，以清洁在所述基板的处理期间在所述室中形成的工艺残留物，以及 排气以排出清洁气体。 检测器在通过通电的清洁气体清洁过程残留物期间监测从表面周围发射的化学发光辐射，并产生与被监测的化学发光辐射有关的信号。 控制器接收信号并评估信号以确定清洁过程的端点。

公开(公告)号：US20030036272A1

公开(公告)日：2003-02-20

申请号：US10159794

申请日：2002-05-30

申请人： APPLIED MATERIALS, INC.

发明人： Shamouil Shamouilian ,  Canfeng Lai ,  Michael Santiago Cox ,  Padmanabhan Krishnaraj ,  Tsutomu Tanaka ,  Sebastien Raoux ,  Peter I. Porshnev ,  Thomas Nowak

IPC分类号： H01L021/302

CPC分类号： B08B7/0035 ,  B08B7/00 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45593 ,  H01J37/3244 ,  H01J37/32844 ,  H01J2237/335 ,  Y02C20/30

摘要： A method of cleaning a semiconductor fabrication processing chamber involves recirculation of cleaning gas components. Consequently, input cleaning gas is utilized efficiently, and undesirable emissions are reduced. The method includes flowing a cleaning gas to an inlet of a processing chamber, and exposing surfaces of the processing chamber to the cleaning gas to clean the surfaces, thereby producing a reaction product. The method further includes removing an outlet gas including the reaction product from an outlet of the processing chamber, separating at least a portion of the reaction product from the outlet gas, and recirculating a portion of the outlet gas to the inlet of the processing chamber.

摘要翻译： 清洁半导体制造处理室的方法包括清洁气体组分的再循环。 因此，有效地利用输入清洁气体，并且减少不期望的排放。 该方法包括使清洁气体流到处理室的入口，并将处理室的表面暴露于清洁气体以清洁表面，从而产生反应产物。 该方法还包括从处理室的出口除去包括反应产物的出口气体，将至少一部分反应产物与出口气体分离，并将出口气体的一部分再循环到处理室的入口。

公开(公告)号：US20030010355A1

公开(公告)日：2003-01-16

申请号：US09905515

申请日：2001-07-13

申请人： Applied Materials, Inc

发明人： Thomas Nowak ,  Ian Latchford ,  Tsutomu Tanaka ,  Bok H. Kim ,  Ping Xu ,  Jason Foster ,  Heath B. DeShong ,  Martin Seamons

IPC分类号： B08B009/00 ,  B08B007/04

CPC分类号： H01J37/32862 ,  B08B7/00 ,  C23C16/4405 ,  C23C16/52 ,  Y10S134/902

摘要： Methods and apparatus for cleaning semiconductor processing equipment. The apparatus include both local and remote gas dissociators coupled to a semiconductor processing chamber to be cleaned. The methods include introducing a precursor gas into the remote dissociator where the gas is dissociated and introducing a portion of the dissociated gas into the chamber. Another portion of the dissociated gas which re-associates before introduction into the chamber is also introduced into the chamber where it is again dissociated. The dissociated gas combines with contaminants in the chamber and is exhausted from the chamber along with the contaminants.

摘要翻译： 半导体加工设备清洗方法及装置。 该装置包括耦合到待清洁的半导体处理室的局部和远程气体离解器。 所述方法包括将前体气体引入到远离解离器中，其中气体被解离并将一部分解离的气体引入室中。 在引入室之前重新结合的解离气体的另一部分也被引入室中，在那里再次解离。 解离的气体与室内的污染物结合，并与污染物一起从室中排出。