公开(公告)号：US20030036272A1

公开(公告)日：2003-02-20

申请号：US10159794

申请日：2002-05-30

申请人： APPLIED MATERIALS, INC.

发明人： Shamouil Shamouilian ,  Canfeng Lai ,  Michael Santiago Cox ,  Padmanabhan Krishnaraj ,  Tsutomu Tanaka ,  Sebastien Raoux ,  Peter I. Porshnev ,  Thomas Nowak

IPC分类号： H01L021/302

CPC分类号： B08B7/0035 ,  B08B7/00 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45593 ,  H01J37/3244 ,  H01J37/32844 ,  H01J2237/335 ,  Y02C20/30

摘要： A method of cleaning a semiconductor fabrication processing chamber involves recirculation of cleaning gas components. Consequently, input cleaning gas is utilized efficiently, and undesirable emissions are reduced. The method includes flowing a cleaning gas to an inlet of a processing chamber, and exposing surfaces of the processing chamber to the cleaning gas to clean the surfaces, thereby producing a reaction product. The method further includes removing an outlet gas including the reaction product from an outlet of the processing chamber, separating at least a portion of the reaction product from the outlet gas, and recirculating a portion of the outlet gas to the inlet of the processing chamber.

摘要翻译： 清洁半导体制造处理室的方法包括清洁气体组分的再循环。 因此，有效地利用输入清洁气体，并且减少不期望的排放。 该方法包括使清洁气体流到处理室的入口，并将处理室的表面暴露于清洁气体以清洁表面，从而产生反应产物。 该方法还包括从处理室的出口除去包括反应产物的出口气体，将至少一部分反应产物与出口气体分离，并将出口气体的一部分再循环到处理室的入口。

公开(公告)号：US20030136332A1

公开(公告)日：2003-07-24

申请号：US10057014

申请日：2002-01-24

申请人： APPLIED MATERIALS INC., A Delaware corporation

发明人： Padmanabhan Krishnaraj ,  Pavel Ionov ,  Canfeng Lai ,  Michael Santiago Cox ,  Shamouil Shamouilian

IPC分类号： C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/509 ,  C30B25/105 ,  H01J37/32935 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31612 ,  H01L21/76837

摘要： A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.

摘要翻译： 提供了沉积，蚀刻和沉积的连续原位工艺，用于使用等离子体工艺在衬底上形成膜。 可以在没有蚀刻剂气体的单独的等离子体激活的情况下执行回蚀。 沉积，蚀刻和沉积的顺序允许填充高纵横比的特征，而过程的连续性导致改善的均匀性。