公开(公告)号：US20030064556A1

公开(公告)日：2003-04-03

申请号：US10283996

申请日：2002-10-30

申请人： Applied Materials, Inc.

发明人： Padmanabhan Krishnaraj ,  Robert Duncan ,  Joseph D'Souza ,  Alan W. Collins ,  Nasreen Chopra ,  Kimberly Branshaw

IPC分类号： H01L021/8238

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76807

摘要： Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (SiF4), oxygen (O2), and argon (Ar) are used as the reactant gases, with the ratio of oxygen to silicon controlled to be at between about 2:1 to 6:1. Such O2 levels help reduce the amount of degradation of ceramic chamber components otherwise caused by the elimination of silane from the process recipe.

公开(公告)号：US20040251236A1

公开(公告)日：2004-12-16

申请号：US10445240

申请日：2003-05-23

申请人： Applied Materials, Inc.

发明人： Lin Zhang ,  Xiaolin Chen ,  DongQing Li ,  Thanh N. Pham ,  Farhad K. Moghadam ,  Shuang Li ,  Padmanabhan Krishnaraj

IPC分类号： C23F001/00 ,  C03C015/00 ,  C03C025/68

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31612

摘要： Abstract of the Disclosure A deposition / etching /deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition /etching /deposition process is begun.

摘要翻译： 发明内容提供了用于填充衬底表面中的间隙的沉积/蚀刻/沉积工艺。 在衬底上形成衬垫，使得当暴露于化学蚀刻剂时形成不同的反应产物。 因此，这种反应产物的检测表明，在第一次蚀刻期间沉积的薄膜部分已被去除到进一步暴露于蚀刻剂可以去除衬垫并露出下面的结构的程度。 因此，在检测到不同的反应产物后停止蚀刻，并且开始沉积/蚀刻/沉积工艺中的下一次沉积。

公开(公告)号：US20040115898A1

公开(公告)日：2004-06-17

申请号：US10319827

申请日：2002-12-13

申请人： Applied Materials, Inc.

发明人： Farhad K. Moghadam ,  Michael S. Cox ,  Padmanabhan Krishnaraj ,  Thanh N. Pham ,  Zhenjiang Cui

IPC分类号： C23C016/40 ,  H01L021/4763 ,  H01L021/76

CPC分类号： H01J37/32082 ,  C23C16/045 ,  H01J2237/3327 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31612 ,  H01L21/76229

摘要： A method of depositing an insulating film over a substrate having a gap formed between two adjacent raised features. The method includes depositing one portion of the insulating film over the substrate and in the gap using a high density plasma process that has simultaneous deposition and sputtering components and depositing another portion of the insulating film over the substrate and in the gap using an atomic layer deposition process. In some embodiments the portion of the film deposited by an atomic layer deposition process is deposited over the portion of the film deposited using a high density plasma CVD technique. In other embodiments, the portion of the film deposited by a high density plasma CVD process is deposited over the portion of the film deposited using an atomic layer deposition process.

摘要翻译： 一种在具有形成在两个相邻凸起特征之间的间隙的基底上沉积绝缘膜的方法。 该方法包括使用具有同时沉积和溅射部件的高密度等离子体工艺在衬底上和间隙中沉积绝缘膜的一部分，并使用原子层沉积在衬底上和间隙中沉积绝缘膜的另一部分 处理。 在一些实施例中，通过原子层沉积工艺沉积的膜的部分沉积在使用高密度等离子体CVD技术沉积的膜的部分上。 在其他实施例中，通过高密度等离子体CVD工艺沉积的膜的部分沉积在使用原子层沉积工艺沉积的膜的部分上。

公开(公告)号：US20020173167A1

公开(公告)日：2002-11-21

申请号：US09818359

申请日：2001-03-26

申请人： Applied Materials, Inc.

发明人： Padmanabhan Krishnaraj ,  Robert Duncan ,  Joseph D'Souza ,  Alan W. Collins ,  Nasreen Chopra ,  Kimberly Branshaw

IPC分类号： H01L021/469

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76807

摘要： Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (SiF4), oxygen (O2), and argon (Ar) are used as the reactant gases, with the ratio of oxygen to silicon controlled to be at between about 2:1 to 6:1. Such O2 levels help reduce the amount of degradation of ceramic chamber components otherwise caused by the elimination of silane from the process recipe.

摘要翻译： 本发明的方法和装置以这样的方式沉积氟化硅酸盐玻璃（FSG），使得它强烈地粘附到上覆的或下面的阻挡层或蚀刻停止层，并具有较低的介电常数以及其它益处。 在一个实施方案中，使用四氟化硅（SiF 4），氧（O 2）和氩（Ar）作为反应气体，其中氧与硅的比例控制在约2:1至6:1之间。 这种O 2水平有助于减少陶瓷室组分的降解量，否则由工艺配方消除硅烷引起。

公开(公告)号：US20040231798A1

公开(公告)日：2004-11-25

申请号：US10825831

申请日：2004-04-16

申请人： Applied Materials, Inc.

发明人： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom K. Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh N. Pham ,  Zhong Qiang Hua

IPC分类号： C23F001/00

CPC分类号： H01L21/67109 ,  H01L21/67017

摘要： A replaceable gas nozzle is insertable in a gas distributor ring of a substrate processing chamber and that can be shielded within the chamber. The replaceable gas nozzle has a longitudinal ceramic body having a channel to direct the flow of the gas into the chamber. The ceramic body includes a first external thread to mate with the gas distributor ring, and a second external thread to receive a heat shield. The channel has an inlet to receive the gas from the gas distributor ring and a pinhole outlet to release the gas into the chamber. A heat shield can be used to shield the nozzle extending into the chamber. The heat shield has a hollow member configured to be coupled with the nozzle that has an internal dimension sufficiently large to be disposed around at least a portion of the nozzle. The hollow member also has an extension which projects distally of the outlet of the nozzle and a heat shield opening for the process gas to flow therethrough from the nozzle outlet.

摘要翻译： 可替换的气体喷嘴可插入基板处理室的气体分配器环中并且可以在室内被屏蔽。 可更换气体喷嘴具有纵向陶瓷体，该纵向陶瓷体具有用于引导气体流入室的通道。 陶瓷体包括与气体分配器环配合的第一外螺纹和用于接纳隔热罩的第二外螺纹。 通道具有用于从气体分配器环接收气体的入口和用于将气体释放到室中的针孔出口。 可以使用隔热罩来屏蔽延伸到腔室中的喷嘴。 隔热罩具有中空构件，其构造成与喷嘴联接，其具有足够大的内部尺寸以设置在喷嘴的至少一部分周围。 中空构件还具有从喷嘴的出口向远侧突出的延伸部和用于处理气体的热屏蔽开口从喷嘴出口流过。

公开(公告)号：US20030203637A1

公开(公告)日：2003-10-30

申请号：US10137132

申请日：2002-04-30

申请人： Applied Materials, Inc.

发明人： Zhong Qiang Hua ,  Dong Qing Li ,  Zhengquan Tan ,  Zhuang Li ,  Michael Chiu Kwan ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj

IPC分类号： H01L021/311

CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/507 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229

摘要： A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.

摘要翻译： 一种沉积具有改进的间隙填充能力的高密度等离子体氧化硅层的方法。 在一个实施例中，该方法包括将由含硅源，含氧源和氦组成的工艺气体流入衬底处理室并从工艺气体形成等离子体。 氦流量相对于硅源和氧源的组合流量的比率在0.5:1和3.0:1之间。 在一个具体实施方案中，工艺气体由单硅烷（SiH 4），分子氧（O 2）和氦组成。

公开(公告)号：US20030036272A1

公开(公告)日：2003-02-20

申请号：US10159794

申请日：2002-05-30

申请人： APPLIED MATERIALS, INC.

发明人： Shamouil Shamouilian ,  Canfeng Lai ,  Michael Santiago Cox ,  Padmanabhan Krishnaraj ,  Tsutomu Tanaka ,  Sebastien Raoux ,  Peter I. Porshnev ,  Thomas Nowak

IPC分类号： H01L021/302

CPC分类号： B08B7/0035 ,  B08B7/00 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45593 ,  H01J37/3244 ,  H01J37/32844 ,  H01J2237/335 ,  Y02C20/30

摘要： A method of cleaning a semiconductor fabrication processing chamber involves recirculation of cleaning gas components. Consequently, input cleaning gas is utilized efficiently, and undesirable emissions are reduced. The method includes flowing a cleaning gas to an inlet of a processing chamber, and exposing surfaces of the processing chamber to the cleaning gas to clean the surfaces, thereby producing a reaction product. The method further includes removing an outlet gas including the reaction product from an outlet of the processing chamber, separating at least a portion of the reaction product from the outlet gas, and recirculating a portion of the outlet gas to the inlet of the processing chamber.

摘要翻译： 清洁半导体制造处理室的方法包括清洁气体组分的再循环。 因此，有效地利用输入清洁气体，并且减少不期望的排放。 该方法包括使清洁气体流到处理室的入口，并将处理室的表面暴露于清洁气体以清洁表面，从而产生反应产物。 该方法还包括从处理室的出口除去包括反应产物的出口气体，将至少一部分反应产物与出口气体分离，并将出口气体的一部分再循环到处理室的入口。

公开(公告)号：US20040224090A1

公开(公告)日：2004-11-11

申请号：US10435296

申请日：2003-05-09

申请人： Applied Materials, Inc.

发明人： Padmanabhan Krishnaraj ,  Bruno Geoffrion ,  Michael S. Cox ,  Lin Zhang ,  Bikram Kapoor ,  Anchuan Wang ,  Zhenjiang Cui

IPC分类号： H05H001/24 ,  B05D003/12 ,  C23C016/00

CPC分类号： C23C16/45502 ,  C23C16/45591 ,  C23C16/56

摘要： A combination of deposition and polishing steps are used to permit improved uniformity of a film after the combination of steps. Both the deposition and polishing are performed with processes that vary across the substrate. The combination of the varying deposition and etching rates results in a film that is substantially planar after the film has been polished. In some instances, it may be easier to control the variation of one of the two processes than the other so that the more controllable process is tailored to accommodate nonuniformities introduced by the less controllable process.

摘要翻译： 沉积和抛光步骤的组合用于在步骤组合之后改进膜的均匀性。 通过在衬底上变化的工艺来进行沉积和抛光。 不同沉积和蚀刻速率的组合导致在膜被抛光之后基本上是平面的膜。 在一些情况下，控制两个过程之一的变化比另一个更容易，因此可控制过程被调整以适应由较不可控过程引入的不均匀性。

公开(公告)号：US20040126952A1

公开(公告)日：2004-07-01

申请号：US10630989

申请日：2003-07-28

申请人： APPLIED MATERIALS, INC.

发明人： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom K. Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh N. Pham ,  Zhong Qiang Hua

IPC分类号： H01L021/8238

CPC分类号： H01L21/67017 ,  H01L21/67109

摘要： The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

摘要翻译： 本发明旨在改善半导体处理系统中的缺陷性能。 在具体实施例中，用于处理半导体衬底的设备包括限定其中的处理区域的腔室和设置在腔室中以支撑半导体衬底的衬底支撑件。 至少一个喷嘴延伸到室中以通过喷嘴开口将工艺气体引入室中。 该装置包括至少一个隔热罩，每个隔热罩设置在至少一个喷嘴之一的至少一部分周围。 隔热罩具有向喷嘴的喷嘴开口向远侧突出的延伸部分，其包括用于工艺气体从喷嘴开口流过的隔热开口。 隔热罩降低了处理室中的喷嘴的温度，用于将工艺气体引入其中以减少颗粒。

公开(公告)号：US20030136332A1

公开(公告)日：2003-07-24

申请号：US10057014

申请日：2002-01-24

申请人： APPLIED MATERIALS INC., A Delaware corporation

发明人： Padmanabhan Krishnaraj ,  Pavel Ionov ,  Canfeng Lai ,  Michael Santiago Cox ,  Shamouil Shamouilian

IPC分类号： C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/509 ,  C30B25/105 ,  H01J37/32935 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31612 ,  H01L21/76837

摘要： A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.

摘要翻译： 提供了沉积，蚀刻和沉积的连续原位工艺，用于使用等离子体工艺在衬底上形成膜。 可以在没有蚀刻剂气体的单独的等离子体激活的情况下执行回蚀。 沉积，蚀刻和沉积的顺序允许填充高纵横比的特征，而过程的连续性导致改善的均匀性。