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1.发明公开公开(公告)号：US20230402271A1
公开(公告)日：2023-12-14
申请号：US18237934
申请日：2023-08-25
Applicant: APPLIED MATERIALS, INC.
Inventor： Xiaodong WANG , Joung Joo LEE , Fuhong ZHANG , Martin Lee RIKER , Keith A. MILLER , William FRUCHTERMAN , Rongjun WANG , Adolph Miller ALLEN , Shouyin ZHANG , Xianmin TANG
CPC classification number: H01J37/3458 , H01J37/345 , H01J37/3452 , H01J37/3411 , C23C14/345 , H01J37/3441 , H01J37/3402 , C23C14/351 , C23C14/54 , H01J37/3405 , H01J37/3447 , H01J37/3455
Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.
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Patent Agency Ranking
公开(公告)号：US20240105433A1
公开(公告)日：2024-03-28
申请号：US18536612
申请日：2023-12-12
Applicant: APPLIED MATERIALS, INC.
Inventor： Jothilingam RAMALINGAM , William FRUCHTERMAN
CPC classification number: H01J37/3441 , C23C14/34 , H01J37/3447
Abstract: Methods and apparatus for reducing burn-in time of a physical vapor deposition shield, including: sputtering a dielectric target having a first dielectric constant to form a dielectric layer upon an inner surface of a shield, wherein the shield includes an aluminum oxide coating having a second dielectric constant in an amount sufficient to reduce the burn-in time, and wherein the first dielectric constant and second dielectric constant are substantially similar.
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3.发明申请公开(公告)号：US20170253959A1
公开(公告)日：2017-09-07
申请号：US15448996
申请日：2017-03-03
Applicant: APPLIED MATERIALS, INC.
Inventor： Xiaodong WANG , Joung Joo LEE , Fuhong ZHANG , Martin Lee RIKER , Keith A. MILLER , William FRUCHTERMAN , Rongjun WANG , Adolph Miller ALLEN , Shouyin ZHANG , Xianmin TANG
CPC classification number: C23C14/351 , C23C14/54 , H01J37/3405 , H01J37/3447 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76871 , H01L21/76879
Abstract: Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a process chamber for processing a substrate having a given diameter includes: an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a rotatable magnetron above the target to form an annular plasma in the peripheral portion; a substrate support disposed in the interior volume to support a substrate having the given diameter; a first set of magnets disposed about the body to form substantially vertical magnetic field lines in the peripheral portion; a second set of magnets disposed about the body and above the substrate support to form magnetic field lines directed toward a center of the support surface; a first power source to electrically bias the target; and a second power source to electrically bias the substrate support.
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4.发明申请公开(公告)号：US20220020577A1
公开(公告)日：2022-01-20
申请号：US17490840
申请日：2021-09-30
Applicant: APPLIED MATERIALS, INC.
Inventor： Xiaodong WANG , Joung Joo LEE , Fuhong ZHANG , Martin Lee RIKER , Keith A. MILLER , William FRUCHTERMAN , Rongjun WANG , Adolph Miller ALLEN , Shouyin ZHANG , Xianmin TANG
Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.
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5.发明申请公开(公告)号：US20210071294A1
公开(公告)日：2021-03-11
申请号：US17101933
申请日：2020-11-23
Applicant: APPLIED MATERIALS, INC.
Inventor： Xiaodong WANG , Joung Joo LEE , Fuhong ZHANG , Martin Lee RIKER , Keith A. MILLER , William FRUCHTERMAN , Rongjun WANG , Adolph Miller ALLEN , Shouyin ZHANG , Xianmin TANG
Abstract: Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a physical vapor deposition chamber includes: a body having an interior volume and a lid assembly including a target to be sputtered; a magnetron disposed above the target, wherein the magnetron is configured to rotate a plurality of magnets about a central axis of the physical vapor deposition chamber; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support a substrate; a collimator disposed between the target and the substrate support, the collimator having a central region having a first thickness and a peripheral region having a second thickness less than the first thickness; a first power source coupled to the target to electrically bias the target; and a second power source coupled to the substrate support to electrically bias the substrate support.
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公开(公告)号：US20210050195A1
公开(公告)日：2021-02-18
申请号：US16994616
申请日：2020-08-16
Applicant: APPLIED MATERIALS, INC.
Inventor： Jothilingam RAMALINGAM , William FRUCHTERMAN
Abstract: Methods and apparatus for reducing burn-in time of a physical vapor deposition shield, including: sputtering a dielectric target having a first dielectric constant to form a dielectric layer upon an inner surface of a shield, wherein the shield includes an aluminum oxide coating having a second dielectric constant in an amount sufficient to reduce the burn-in time, and wherein the first dielectric constant and second dielectric constant are substantially similar.
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