-
公开(公告)号：US20240384396A1
公开(公告)日：2024-11-21
申请号：US18589392
申请日：2024-02-27
Applicant: Applied Materials, Inc.
Inventor： Xiangjin XIE , Suhas UMESH , Martin Lee RIKER
IPC: C23C14/54
Abstract: Embodiments of process chambers having a collimator are provided herein. In some embodiments, a process chamber includes: a chamber body having sidewalls and a top plate to define an interior volume therein, the top plate configured to support a target in the interior volume; a substrate support disposed in the interior volume opposite the top plate; a collimator disposed in the interior volume between the top plate and the substrate support; and a lower shield disposed in the interior volume about the collimator and coupled to the chamber body at a location below an upper surface of the collimator via a ceramic spacer disposed between the lower shield and the chamber body configured to electrically decouple the lower shield from the chamber body.
-
2.发明公开公开(公告)号：US20230402271A1
公开(公告)日：2023-12-14
申请号：US18237934
申请日：2023-08-25
Applicant: APPLIED MATERIALS, INC.
Inventor： Xiaodong WANG , Joung Joo LEE , Fuhong ZHANG , Martin Lee RIKER , Keith A. MILLER , William FRUCHTERMAN , Rongjun WANG , Adolph Miller ALLEN , Shouyin ZHANG , Xianmin TANG
CPC classification number: H01J37/3458 , H01J37/345 , H01J37/3452 , H01J37/3411 , C23C14/345 , H01J37/3441 , H01J37/3402 , C23C14/351 , C23C14/54 , H01J37/3405 , H01J37/3447 , H01J37/3455
Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.
-
3.发明申请公开(公告)号：US20220259720A1
公开(公告)日：2022-08-18
申请号：US17177875
申请日：2021-02-17
Applicant: Applied Materials, Inc.
Inventor： Suhas BANGALORE UMESH , Preetham RAO , Shirish A. PETHE , Fuhong ZHANG , Kishor Kumar KALATHIPARAMBIL , Martin Lee RIKER , Lanlan ZHONG
Abstract: Methods and apparatus for processing a plurality of substrates are provided herein. In some embodiments, a method of processing a plurality of substrates in a physical vapor deposition (PVD) chamber includes: performing a series of reflow processes on a corresponding series of substrates over at least a portion of a life of a sputtering target disposed in the PVD chamber, wherein a substrate-to-target distance in the PVD chamber and a support-to-target distance within the PVD chamber are each controlled as a function of the life of the sputtering target.
-
公开(公告)号：US20240213007A1
公开(公告)日：2024-06-27
申请号：US18089216
申请日：2022-12-27
Applicant: Applied Materials, Inc.
Inventor： Junjie PAN , Yida LIN , Xiangjin XIE , Martin Lee RIKER , Suhas UMESH , Keith A. MILLER
CPC classification number: H01J37/3464 , C23C14/35 , C23C14/54 , H01J37/3405 , H01J37/3476 , H01J2237/332
Abstract: Methods and apparatus for controlling processing of a substrate within a process chamber, comprising: performing statistical analysis on measurements of deposition profile of at least one previously processed substrate processed in the process chamber, wherein the deposition profile is based at least on modulating a power parameter of at least one power supply affecting a magnetron in the process chamber; determining, based on the statistical analysis, a model of the deposition profile as a function of at least the power parameter; fitting the measurements of deposition profile to the model; determining a power parameter setpoint for the at least one power supply using the fitted model based on a desired deposition profile of an unprocessed substrate; and setting the power parameter setpoint for processing the unprocessed substrate.
-
公开(公告)号：US20230230806A1
公开(公告)日：2023-07-20
申请号：US17568836
申请日：2022-01-05
Applicant: Applied Materials, Inc.
Inventor： Yida LIN , Rui LI , Martin Lee RIKER , Haitao WANG , Noufal Kappachali , Xiangjin XIE
IPC: H01J37/32
CPC classification number: H01J37/32183 , B23K15/0006 , H01J2237/327
Abstract: Methods and apparatus for processing a substrate are provided herein. For example, an RF power delivery compensation circuit comprises a first input configured to receive an RF forward power from an RF power source connected to a processing chamber and a second input configured to receive an RF delivered power from a matching network connected between the RF power source and the processing chamber. The RF power delivery compensation circuit calculates an RF forward power compensation factor based on the RF forward power and the RF delivered power for adjusting the RF forward power delivered to the processing chamber during operation.
-
Patent Agency Ranking
公开(公告)号：US20140190822A1
公开(公告)日：2014-07-10
申请号：US14204873
申请日：2014-03-11
Applicant: Applied Materials, Inc.
Inventor： Martin Lee RIKER , Keith A. MILLER , Anantha K. SUBRAMANI
IPC: H01J37/34
CPC classification number: C23C16/4585 , C23C14/34 , C23C14/50 , C23C14/564 , H01J37/32623 , H01J37/32633 , H01J37/3408 , H01J37/3441
Abstract: Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.
Abstract translation: 本文描述的实施例通常涉及用于半导体处理室的部件，用于半导体处理室的处理套件和具有处理套件的半导体处理室。 在一个实施例中，提供了用于环绕溅射靶的底部屏蔽件和衬底支撑件。 下屏蔽包括具有第一直径的圆柱形外带，其尺寸被设计成围绕溅射靶的溅射表面和衬底支撑件，该圆柱形带包括围绕溅射靶的溅射表面的顶壁和围绕溅射靶的底壁 衬底支撑件，包括搁置表面并从圆柱形外带径向向外延伸的支撑凸缘，从圆柱形带的底壁径向向内延伸的底板，以及与基板耦合并部分围绕外围的圆柱形内带 基板支撑的边缘。
-
公开(公告)号：US20220384158A1
公开(公告)日：2022-12-01
申请号：US17334636
申请日：2021-05-28
Applicant: Applied Materials, Inc.
Inventor： Suhas BANGALORE UMESH , Martin Lee RIKER
Abstract: A plasma vapor deposition (PVD) chamber used for depositing material includes an apparatus for influencing ion trajectories during deposition in an edge region of a substrate. The apparatus includes a reflector assembly that surrounds a substrate support and is configured to reflect heat to the substrate during reflowing of material deposited on the substrate and a plurality of permanent magnets embedded in the reflector assembly that are configured to influence ion trajectories on the edge region of the substrate during deposition processes, the plurality of permanent magnets are spaced symmetrically around the reflector assembly.
-
公开(公告)号：US20220380888A1
公开(公告)日：2022-12-01
申请号：US17334630
申请日：2021-05-28
Applicant: Applied Materials, Inc.
Inventor： Goichi YOSHIDOME , Suhas BANGALORE UMESH , Sushil Arun SAMANT , Martin Lee RIKER , Wei LEI , Kishor Kumar KALATHIPARAMBIL , Shirish A. PETHE , Fuhong ZHANG , Prashanth KOTHNUR , Andrew TOMKO
Abstract: Methods of processing a substrate in a PVD chamber are provided herein. In some embodiments, a method of processing a substrate in a PVD chamber, includes: sputtering material from a target disposed in the PVD chamber and onto a substrate, wherein at least some of the material sputtered from the target is guided to the substrate through a magnetic field provided by one or more upper magnets disposed about a processing volume of the PVD chamber above a support pedestal for the substrate in the PVD chamber, one or more first magnets disposed about the support pedestal and providing an increased magnetic field strength at an edge region of the substrate, and one or more second magnets disposed below the support pedestal that increase a magnetic field strength at a central region of the substrate.
-
公开(公告)号：US20190279851A1
公开(公告)日：2019-09-12
申请号：US16426964
申请日：2019-05-30
Applicant: Applied Materials, Inc.
Inventor： Martin Lee RIKER , Fuhong ZHANG , Anthony INFANTE , Zheng WANG
Abstract: A collimator that is biasable is provided. The ability to bias the collimator allows control of the electric field through which the sputter species pass. In some implementations of the present disclosure, a collimator that has a high effective aspect ratio while maintaining a low aspect ratio along the periphery of the collimator of the hexagonal array of the collimator is provided. In some implementations, a collimator with a steep entry edge in the hexagonal array is provided. It has been found that use of a steep entry edge in the collimator reduces deposition overhang and clogging of the cells of the hexagonal array. These various features lead to improve film uniformity and extend the life of the collimator and process kit.
-
10.发明申请公开(公告)号：US20170253959A1
公开(公告)日：2017-09-07
申请号：US15448996
申请日：2017-03-03
Applicant: APPLIED MATERIALS, INC.
Inventor： Xiaodong WANG , Joung Joo LEE , Fuhong ZHANG , Martin Lee RIKER , Keith A. MILLER , William FRUCHTERMAN , Rongjun WANG , Adolph Miller ALLEN , Shouyin ZHANG , Xianmin TANG
CPC classification number: C23C14/351 , C23C14/54 , H01J37/3405 , H01J37/3447 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76871 , H01L21/76879
Abstract: Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a process chamber for processing a substrate having a given diameter includes: an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a rotatable magnetron above the target to form an annular plasma in the peripheral portion; a substrate support disposed in the interior volume to support a substrate having the given diameter; a first set of magnets disposed about the body to form substantially vertical magnetic field lines in the peripheral portion; a second set of magnets disposed about the body and above the substrate support to form magnetic field lines directed toward a center of the support surface; a first power source to electrically bias the target; and a second power source to electrically bias the substrate support.
-
-
-
-
-
-
-
-
-
Search Results
17
records
(took 0.018 seconds)
