公开(公告)号：US20030019428A1

公开(公告)日：2003-01-30

申请号：US10134206

申请日：2002-04-26

申请人： APPLIED MATERIALS, INC.

发明人： Vincent W. Ku ,  Anzhong Chang ,  Anh N. Nguyen ,  Ming Xi ,  Xiaoxiong Yuan ,  Juan B. Tuscano JR. ,  Lawrence C. Lei ,  Seshadri Ganguli ,  Michael Yang ,  Chen-An Chen ,  Ling Chen

IPC分类号： C23C016/00 ,  C23F001/00 ,  H01L021/306

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45512

摘要： A processing chamber is adapted to perform a deposition process on a substrate. The chamber includes a pedestal adapted to hold a substrate during deposition and a gas mixing and distribution assembly mounted above the pedestal. The gas mixing and distribution assembly includes a face plate, a dispersion plate mounted above the face plate, and a mixing fixture mounted above the dispersion plate. The face plate is adapted to present an emissivity invariant configuration to the pedestal. The mixing fixture includes a mixing chamber to which a process gas is flowed and an outer chamber surrounding the mixing chamber. The processing chamber further includes an enclosure and a liner installed inside the enclosure and surrounding the pedestal. The liner defines a gap between the liner and the enclosure. The gap has a minimum width adjacent an exhaust port and a maximum width at a point that is diametrically opposite the exhaust port.

摘要翻译： 处理室适于在基板上执行沉积处理。 腔室包括适于在沉积期间保持基底的基座和安装在基座上方的气体混合和分配组件。 气体混合分配组件包括面板，安装在面板上方的分散板和安装在分散板上方的混合夹具。 面板适于向基座呈现发射率不变构型。 混合夹具包括处理气体流过的混合室和围绕混合室的外室。 处理室还包括外壳和安装在外壳内并围绕基座的衬垫。 衬套限定了衬套和外壳之间的间隙。 该间隙具有邻近排气口的最小宽度和在与排气口径向相反的点处的最大宽度。

公开(公告)号：US20040065255A1

公开(公告)日：2004-04-08

申请号：US10356251

申请日：2003-01-31

申请人： Applied Materials, Inc.

发明人： Michael X. Yang ,  Joseph Yudovsky ,  Hyungsuk Yoon ,  Xiaoxiong Yuan

IPC分类号： C23C016/00

CPC分类号： C23C16/45551 ,  C23C16/45519 ,  C23C16/54

摘要： Embodiments of the invention are generally directed to a cyclical layer deposition system, which includes a processing chamber; at least one load lock chamber connected to the processing chamber; a plurality of gas injectors connected to the processing chamber. The gas injectors are configured to deliver gas streams into the processing chamber. The system further includes at least one shuttle movable between the at least one load lock chamber and the processing chamber.

摘要翻译： 本发明的实施例通常涉及一种循环层沉积系统，其包括处理室; 连接到处理室的至少一个装载锁定室; 连接到处理室的多个气体喷射器。 气体注入器构造成将气流输送到处理室中。 所述系统还包括在所述至少一个装载锁定室和所述处理室之间可移动的至少一个梭。

公开(公告)号：US20030136520A1

公开(公告)日：2003-07-24

申请号：US10055634

申请日：2002-01-22

申请人： Applied Materials, Inc.

发明人： Joseph Yudovsky ,  Salvador P. Umotoy ,  Shamouil Shamouilian ,  Ron Rose ,  Rita Dukes ,  Xiaoxiong Yuan

IPC分类号： C23F001/02 ,  C23C016/00

CPC分类号： C23C16/45521 ,  C23C16/4581 ,  C23C16/4586 ,  H01J2237/2001 ,  H01L21/67092

摘要： A substrate support assembly for supporting a substrate during processing is provided. In one embodiment, a support assembly includes a ceramic body having an embedded heating element and a base plate. The base plate and the ceramic body define a channel therebetween adapted to supply purge gas to a perimeter of a substrate disposed on the support assembly. The base plate is fastened to the body by brazing, adhering, fastening, press fitting or by mating engaging portions of a retention device such as a bayonet fitting.

摘要翻译： 提供了一种用于在处理期间支撑基板的基板支撑组件。 在一个实施例中，支撑组件包括具有嵌入式加热元件和基板的陶瓷体。 基板和陶瓷体在它们之间限定了一个通道，用于将净化气体供应到设置在支撑组件上的基板的周边。 基板通过钎焊，粘合，紧固，压配合或通过配合诸如卡口配件的保持装置的接合部分而紧固到主体。

公开(公告)号：US20030017268A1

公开(公告)日：2003-01-23

申请号：US09908999

申请日：2001-07-18

申请人： Applied Materials, Inc.

发明人： Jianhua Hu ,  Hanh D. Nguyen ,  Steve H. Chiao ,  Xiaoxiong Yuan ,  Anzhong Chang ,  Hongbee Teoh ,  Avgerinos Gelatos

IPC分类号： C23C016/00

CPC分类号： C23C16/45565 ,  C23C16/34 ,  C23C16/4412 ,  C23C16/45502 ,  C23C16/45574

摘要： In one aspect of the present invention there is provided a method of improving the uniformity of a titanium nitride film, comprising the steps of introducing TiCl4 gas to a chemical vapor deposition chamber from the center of a chamber lid wherein said chamber lid has a blocker plate; introducing NH3 gas to the chemical vapor deposition chamber simultaneously from both the center and edge of the chamber lid thereby distributing the TiCl4 gas and the NH3 gas uniformly across a surface of a wafer; and depositing a titanium nitride film by chemical vapor deposition onto the surface of the wafer where the uniform distribution of the TiCl4 gas and the NH3 gas yields a titanium nitride film with improved uniformity. The chamber is provided with two pumping channels positioned on either side of the chamber.

摘要翻译： 在本发明的一个方面，提供了一种提高氮化钛膜的均匀性的方法，包括以下步骤：将TiCl 4气体从室盖的中心引入化学气相沉积室，其中所述室盖具有阻挡板 ; 从室盖的中心和边缘同时将NH 3气体引入化学气相沉积室，从而将TiCl 4气体和NH 3气体均匀地分布在晶片的表面上; 以及通过化学气相沉积将氮化钛膜沉积到晶片的表面上，其中TiCl 4气体和NH 3气体的均匀分布产生具有改进的均匀性的氮化钛膜。 腔室设置有位于腔室两侧的两个泵送通道。