公开(公告)号：US20020127336A1

公开(公告)日：2002-09-12

申请号：US10050654

申请日：2002-01-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Ling Chen ,  Wei Cao

IPC: C23C016/00

CPC classification number: C23C16/45534 ,  C23C16/18

Abstract: A method of growing a thin film onto a substrate. A precursor of the film is fed into a reaction space in the form of a vapor phase pulse causing the precursor to adsorb onto the surface of the substrate to form a layer thereof. A catalyst is susequently fed into the reaction space in an amount to substantially convert the layer of the precursor to the desired thin film. The above steps may be repeated to achieve the desired film thickness.

公开(公告)号：US20030203616A1

公开(公告)日：2003-10-30

申请号：US10133787

申请日：2002-04-24

Applicant: Applied Materials, Inc.

Inventor： Hua Chung ,  Seshadri Ganguli ,  Ling Chen

IPC: H01L021/4763 ,  H01L021/44

CPC classification number: C23C16/45553 ,  C23C16/16 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76874

Abstract: A method of tungsten layer deposition for copper metallization in semiconductor devices includes reacting a tungsten carbonyl compound and a borane compound using a cyclical deposition technique. In one embodiment, the tungsten barrier layer is formed on a patterned dielectric layer by alternately adsorbing the tungsten carbonyl compound and the borane compound onto a semiconductor substrate. The tungsten layers have substantially uniform dimensions and excellent adhesion to copper such as copper seed layers or direct electroplating of copper onto the tungsten layer.

Abstract translation: 用于半导体器件中铜金属化的钨层沉积的方法包括使用循环沉积技术使羰基钨化合物和硼烷化合物反应。 在一个实施例中，通过交替地将钨羰基化合物和硼烷化合物吸附到半导体衬底上，在图案化的介电层上形成钨阻挡层。 钨层具有基本均匀的尺寸和对诸如铜种子层的铜的优异粘合性或者将铜直接电镀到钨层上。

公开(公告)号：US20030121608A1

公开(公告)日：2003-07-03

申请号：US10281079

申请日：2002-10-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima ,  Mei Chang

IPC: C23C016/00 ,  C23F001/00 ,  F17D001/16

CPC classification number: C23C16/34 ,  C23C16/4404 ,  C23C16/4411 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/28562 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871 ,  Y10T137/0396

Abstract: An apparatus and method for performing a cyclical layer deposition process, such as atomic layer deposition is provided. In one aspect, the apparatus includes a substrate support having a substrate receiving surface, and a chamber lid comprising a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The apparatus also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve.

Abstract translation: 提供了一种用于执行诸如原子层沉积的循环层沉积工艺的装置和方法。 一方面，该装置包括具有基板接收表面的基板支撑件和包括从腔室盖的中心部分延伸的锥形通道的腔室盖和从通道延伸到腔室盖的周边部分的底面， 所述底表面的形状和尺寸基本上覆盖所述基板接收表面。 该装置还包括联接到逐渐扩大的通道的一个或多个阀以及联接到每个阀的一个或多个气体源。

公开(公告)号：US20030097013A1

公开(公告)日：2003-05-22

申请号：US10122491

申请日：2002-04-12

Applicant: Applied Materials, Inc.

Inventor： Ling Chen ,  Barry Chin

IPC: C07F001/00 ,  C07F001/08 ,  C07F001/10 ,  C07F001/12 ,  C07F003/00 ,  C07F005/00 ,  C07F007/00 ,  C07F009/00 ,  C07F011/00 ,  C07F013/00 ,  C07F015/00 ,  C07F017/00

CPC classification number: C07C251/08

Abstract: Nitrogen containing analogs of Copper II null-diketonates which analogs are more stable source reagents for copper deposition when substantially free of solvents of excess ligands. The nitrogen containing analogs replace -O- with nullN(Rnull)nullwherein Rnull is an alkyl group having from one to four carbon atoms. Replacement of each -O- is preferred although replacement of one -O- per cyclic ring is sufficient to improve stability of the copper source reagents. The source reagent can be purified by sublimation to remove solvents and excess ligands prior to semiconductor processing.

Abstract translation: 含铜的类似物铜IIβ-二酮类似物，当基本上不含过量配体的溶剂时，类似物是用于铜沉积的更稳定的源试剂。 含氮的类似物用-N（R“） - 取代-O-，其中R”是具有1-4个碳原子的烷基。 每个-O-的替代是优选的，尽管每个环的一个-O-取代足以提高铜源试剂的稳定性。 源试剂可以通过升华纯化，以在半导体加工之前除去溶剂和过量的配体。

公开(公告)号：US20030019428A1

公开(公告)日：2003-01-30

申请号：US10134206

申请日：2002-04-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Vincent W. Ku ,  Anzhong Chang ,  Anh N. Nguyen ,  Ming Xi ,  Xiaoxiong Yuan ,  Juan B. Tuscano JR. ,  Lawrence C. Lei ,  Seshadri Ganguli ,  Michael Yang ,  Chen-An Chen ,  Ling Chen

IPC: C23C016/00 ,  C23F001/00 ,  H01L021/306

CPC classification number: C23C16/45565 ,  C23C16/455 ,  C23C16/45512

Abstract: A processing chamber is adapted to perform a deposition process on a substrate. The chamber includes a pedestal adapted to hold a substrate during deposition and a gas mixing and distribution assembly mounted above the pedestal. The gas mixing and distribution assembly includes a face plate, a dispersion plate mounted above the face plate, and a mixing fixture mounted above the dispersion plate. The face plate is adapted to present an emissivity invariant configuration to the pedestal. The mixing fixture includes a mixing chamber to which a process gas is flowed and an outer chamber surrounding the mixing chamber. The processing chamber further includes an enclosure and a liner installed inside the enclosure and surrounding the pedestal. The liner defines a gap between the liner and the enclosure. The gap has a minimum width adjacent an exhaust port and a maximum width at a point that is diametrically opposite the exhaust port.

Abstract translation: 处理室适于在基板上执行沉积处理。 腔室包括适于在沉积期间保持基底的基座和安装在基座上方的气体混合和分配组件。 气体混合分配组件包括面板，安装在面板上方的分散板和安装在分散板上方的混合夹具。 面板适于向基座呈现发射率不变构型。 混合夹具包括处理气体流过的混合室和围绕混合室的外室。 处理室还包括外壳和安装在外壳内并围绕基座的衬垫。 衬套限定了衬套和外壳之间的间隙。 该间隙具有邻近排气口的最小宽度和在与排气口径向相反的点处的最大宽度。

公开(公告)号：US20020117399A1

公开(公告)日：2002-08-29

申请号：US09792737

申请日：2001-02-23

Applicant: Applied Materials, Inc.

Inventor： Fusen Chen ,  Ling Chen

IPC: B32B009/00 ,  H01L021/283 ,  C25D005/02 ,  C23C028/02 ,  C23C028/00 ,  B32B027/14 ,  B32B003/00 ,  B32B007/00

CPC classification number: H01L21/76844 ,  C23C14/165 ,  C23C14/3407 ,  C23C16/45525 ,  C23C28/00 ,  C25D7/123 ,  H01J37/026 ,  H01J2237/0047 ,  H01J2237/3175 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76865 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/24802 ,  Y10T428/24917 ,  Y10T428/265 ,  H01L2924/00

Abstract: A method of forming a copper via and the resultant structure. A thin layer of an insulating barrier material, such as aluminum oxide or tantalum nitride, is conformally coated onto the sides and bottom of the via hole, for example, by atomic layer deposition (ALD) to a thickness of less than 5 nm, preferably less than 2 nm and having an electrical resistivity of more than 500 microohm-cm. A copper seed layer is then deposited under conditions such that copper is deposited on the via sidewalls but not deposited over most of the bottom of via hole. Instead energetic copper ions sputter the barrier material from the via bottom. Copper is electroplated into the via hole lined only on its sidewalls with the barrier. The invention preferably extends also to dual-damascene structures in which the copper seed sputter process sputters the barrier layer from the via bottom but not the trench floor.

Abstract translation: 形成铜通孔的方法和所得结构。 诸如氧化铝或氮化钽的绝缘阻挡材料的薄层例如通过原子层沉积（ALD）共形地涂覆在通孔的侧面和底部上，厚度小于5nm，优选地 小于2nm并且具有大于500微欧姆·厘米的电阻率。 然后在使得铜沉积在通孔侧壁上但不沉积在通孔的大部分底部的条件下沉积铜籽晶层。 相反，高能铜离子从通孔底部溅射阻挡材料。 将铜电镀到仅在其侧壁上排列的通孔中。 本发明还优选地延伸到双镶嵌结构，其中铜种子溅射处理从通孔底部而不是沟槽底部喷射阻挡层。

公开(公告)号：US20040152330A1

公开(公告)日：2004-08-05

申请号：US10700325

申请日：2003-11-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Jick M. Yu ,  Ling Chen

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L21/76843

Abstract: A process of forming a via through a inter-level dielectric layer and the product. The via is formed by etching a via hole through the inter-level dielectric layer in an area overlying a conductive feature, such a lower copper metallization. Atomic layer deposition (ALD) forms a very thin refractory metal nitride barrier layer over the sidewalls and bottom of the via. Its thickness is less than 1.5 nm, and may be formed with no more than six ALD cycle. A copper seed layer is sputtered onto the barrier including the bottom portion, and copper is electrochemically filled into the hole. The barrier is thin enough to have a low electrical resistance, as may be explained by electronic quantum mechanical tunneling. Further, the crystallography and defects of the underlying copper continue across the thin barrier into the overlying copper.

Abstract translation: 通过层间电介质层和产品形成通孔的工艺。 通过在覆盖导电特征的区域（例如较低的铜金属化物）中蚀刻通过层间电介质层的通孔来形成通孔。 原子层沉积（ALD）在通孔的侧壁和底部上形成非常薄的难熔金属氮化物阻挡层。 其厚度小于1.5nm，并且可以形成不超过六个ALD循环。 将铜种子层溅射到包括底部的阻挡层上，铜电化学填充到孔中。 阻挡层足够薄以具有低电阻，如电子量子力学隧道法所解释的那样。 此外，底层铜的晶体学和缺陷继续穿过薄屏障进入覆盖铜。

公开(公告)号：US20040014320A1

公开(公告)日：2004-01-22

申请号：US10447255

申请日：2003-05-27

Applicant: Applied Materials, Inc.

Inventor： Ling Chen ,  Vincent W. Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

IPC: B01J010/00 ,  B01J010/02 ,  B01J012/00 ,  B01J012/02 ,  B01J014/00 ,  B01J015/00 ,  B01J016/00 ,  B01J019/00 ,  B32B027/04 ,  B32B027/12 ,  H01L021/302 ,  H01L021/461 ,  B32B005/02

CPC classification number: C23C16/45544 ,  C23C16/18 ,  C23C16/34 ,  C23C16/4402 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/4487 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The precursor is generated in a canister having a surrounding heating element configured to reduce formation of impurities.

Abstract translation: 用于填充衬底中的特征的前体和方法。 该方法通常包括沉积阻挡层，阻挡层由具有小于约5ppm氯的五（二甲基氨基）钽形成。 该方法另外可以包括在阻挡层上沉积种子层并在种子层上沉积导电层。 前体通常包括具有小于约5ppm氯的五（二甲基氨基）钽。 在具有周围加热元件的罐中产生前体，该加热元件被配置为减少杂质的形成。

公开(公告)号：US20030140857A1

公开(公告)日：2003-07-31

申请号：US10058670

申请日：2002-01-28

Applicant: Applied Materials, Inc.

Inventor： Salvador P. Umotoy ,  Lawrence Chung-Lai Lei ,  Ling Chen ,  Anzhong Chang ,  Seshadri Ganguli

IPC: C23C016/00

CPC classification number: C23C16/45563 ,  C23C16/16 ,  C23C16/448 ,  C23C16/45582

Abstract: In accordance with an embodiment of the invention, a processing chamber is configured to carry out chemical vapor deposition (CVD). An ampoule vaporizer is fastened to the chamber, and is configured to convert a fluorine-free tungsten-containing solid compound to vapor delivered to the chamber for use in the CVD. In one embodiment, the solid compound is tungsten hexacarbonyl (W(CO)6). In another embodiment, a mass flow controller is fastened to the chamber, and is configured to receive the vapor from the ampoule vaporizer, regulate the flow of the vapor, and deliver the vapor to the chamber. In yet another embodiment, the chamber includes a funnel-shaped dispersion plate configured to receive a gas mixture and direct the gas mixture toward a surface of the wafer in a substantially uniform manner.

Abstract translation: 根据本发明的实施例，处理室被配置为执行化学气相沉积（CVD）。 安瓿蒸发器被固定到室，并且被配置为将无氟含钨固体化合物转化成输送到室中用于CVD中的蒸气。 在一个实施方案中，固体化合物是六羰基钨（W（CO）6）。 在另一个实施例中，质量流量控制器被紧固到腔室，并且被配置为从安瓿蒸发器接收蒸气，调节蒸汽的流动并将蒸气输送到腔室。 在另一个实施例中，腔室包括漏斗形分散板，其配置成接收气体混合物并以基本均匀的方式将气体混合物引向晶片的表面。

公开(公告)号：US20030108674A1

公开(公告)日：2003-06-12

申请号：US10199419

申请日：2002-07-18

Applicant: Applied Materials, Inc.

Inventor： Hua Chung ,  Ling Chen ,  Barry L. Chin

IPC: C23C016/34

CPC classification number: C23C16/45531 ,  C23C16/34 ,  H01L21/28562 ,  H01L21/76843

Abstract: Embodiments of the invention relate to an apparatus and method of cyclical layer deposition utilizing three or more precursors. In one embodiment, the method includes providing at least one cycle of precursors to form a ternary material layer. Providing at least one cycle of precursors includes introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor, wherein the pulses of two of the three precursors are introduced simultaneously or sequentially. In anoher embodiment, the method includes introducing a pulse of a first precursor, introducing a pulse of a second precursor, repeating the introduction of the first and the second precursors at least one time to form a binary material layer on the substrate surface, and introducing a pulse of a third precursor to form the ternary material layer.

Abstract translation: 本发明的实施例涉及利用三种或更多种前体的循环层沉积的装置和方法。 在一个实施方案中，该方法包括提供至少一个循环的前体以形成三元材料层。 提供至少一个前体循环包括引入第一前体的脉冲，引入第二前体的脉冲，以及引入第三前体的脉冲，其中三个前体中的两个的脉冲同时或顺序地引入。 在另一实施例中，该方法包括引入第一前体的脉冲，引入第二前体的脉冲，至少一次重复引入第一和第二前体，以在衬底表面上形成二元材料层，并引入 形成三元材料层的第三前体的脉冲。