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    Method and apparatus for fluid flow control
    1.
    发明申请
    Method and apparatus for fluid flow control 审中-公开
    流体流量控制的方法和装置

    公开(公告)号：US20040055636A1

    公开(公告)日：2004-03-25

    申请号：US10621042

    申请日：2003-07-15

    Applicant: APPLIED MATERIALS INC.

    Inventor： Juan Carlos Rocha-Alvarez ,  Chen-An Chen ,  Shankar Venkataraman

    IPC: G05D011/00

    CPC classification number: G05D7/0635 ,  Y10T137/0363 ,  Y10T137/2524 ,  Y10T137/2529 ,  Y10T137/265

    Abstract: The invention provides a method and apparatus to control fluids such as process gases into two or more substrate process chambers. In one aspect, the gas flow from a first supply to a first processing region is used to control the gas flow of a second supply to a second processing region where the total gas flow is about equal to the total of the gas flows into both the first and second processing regions. In another aspect, the gas flow rate from the first supply for the first processing region is about equal to the gas flow rate for the second supply to the second processing region.

    Abstract translation: 本发明提供了一种方法和装置，用于将诸如工艺气体的流体控制成两个或多个衬底处理室。 在一个方面，从第一供应到第一处理区域的气体流被用于控制第二供应源到第二处理区域的气体流量，其中总气体流量大约等于气体流入二者的总和 第一和第二处理区域。 另一方面，来自第一处理区域的第一供应源的气体流量大约等于第二供给到第二处理区域的气体流量。

    Corrosion resistant coating
    3.
    发明申请
    Corrosion resistant coating 审中-公开

    公开(公告)号：US20020081395A1

    公开(公告)日：2002-06-27

    申请号：US10081312

    申请日：2002-02-21

    Applicant: Applied Materials, Inc.

    Inventor： Won Bang ,  Chen-An Chen ,  Shankar Venkataraman ,  Ajay Bhatnagar

    IPC: H05H001/24

    CPC classification number: C23C14/5806 ,  C23C14/0694 ,  C23C16/4404 ,  H01J37/32477 ,  H01J37/32559

    Abstract: A corrosion resistant part comprising a protective coating formed upon a component part. The protective coating comprises magnesium fluoride, which is substantially pure and substantially dense. Preferably, the coating is at least about 99% pure and at least about 85% dense. For example, such a coating can be formed upon the component part at a temperature of at least about 250null C. and a pressure of not more than about 1null10null5 torr. The resulting coating is effective in protecting the surfaces of an aluminum nitride heater against corrosion within a fluorine-containing environment inside a chemical vapor deposition chamber.

    Apparatus and method for plasma assisted deposition
    4.
    发明申请
    Apparatus and method for plasma assisted deposition 失效
    用于等离子体辅助沉积的装置和方法

    公开(公告)号：US20030143328A1

    公开(公告)日：2003-07-31

    申请号：US10197940

    申请日：2002-07-16

    Applicant: Applied Materials, Inc.

    Inventor： Chen-An Chen ,  Avgerinos Gelatos ,  Michael X. Yang ,  Ming Xi ,  Mark M. Hytros

    IPC: C23C016/00 ,  H01L021/306

    CPC classification number: C23C16/06 ,  C23C16/34 ,  C23C16/42 ,  C23C16/452 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/515 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/76843

    Abstract: Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support. One embodiment of the method comprises performing in a single chamber one or more of the processes including, but not limited to, cyclical layer deposition, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition; plasma-enhanced chemical vapor deposition; and/or chemical vapor deposition.

    Abstract translation: 本发明的实施例涉及通过在处理区域附近产生等离子体辅助沉积的装置和方法。 该装置的一个实施例包括基板处理室，其包括顶部喷淋板，耦合到顶部淋浴板的电源，底部淋浴板和布置在顶部淋浴板和底部淋浴板之间的绝缘体。 一方面，电源适于选择性地向顶部喷淋板提供电力，以从顶部喷淋板和底部淋浴板之间的气体产生等离子体。 在另一个实施例中，电源耦合到顶部喷淋板和底部淋浴板，以在底部喷淋板和基板支撑件之间产生等离子体。 该方法的一个实施方案包括在单个室中进行一个或多个过程，包括但不限于循环层沉积，组合循环层沉积和等离子体增强化学气相沉积; 等离子体增强化学气相沉积; 和/或化学气相沉积。

    Method for cleaning a process chamber
    5.
    发明申请
    Method for cleaning a process chamber 失效
    清洁处理室的方法

    公开(公告)号：US20030192568A1

    公开(公告)日：2003-10-16

    申请号：US10122481

    申请日：2002-04-12

    Applicant: Applied Materials, Inc.

    Inventor： Yi Zheng ,  Vinita Singh ,  Srinivas D. Nemani ,  Chen-An Chen ,  Ju-Hyung Lee ,  Shankar Venkataraman

    IPC: B08B006/00

    CPC classification number: C23C16/4405 ,  B08B7/00 ,  Y10S134/902 ,  Y10S438/905

    Abstract: Methods and apparatus for cleaning deposition chambers are presented. The cleaning methods include the use of a remote plasma source to generate reactive species from a cleaning gas to clean deposition chambers. A flow of helium or argon may be used during chamber cleaning. Radio frequency power may also be used in combination with a remote plasma source to clean deposition chambers.

    Abstract translation: 介绍了沉积室清洗方法和设备。 清洁方法包括使用远程等离子体源从清洁气体产生反应物质以清洁沉积室。 在室清洁期间可以使用氦气或氩气流。 射频功率还可以与远程等离子体源组合使用以清洁沉积室。

    LOW PROFILE THICK FILM HEATERS IN MULTI-SLOT BAKE CHAMBER
    6.
    发明申请
    LOW PROFILE THICK FILM HEATERS IN MULTI-SLOT BAKE CHAMBER 失效
    低型薄壁加热器在多槽烤箱

    公开(公告)号：US20020190051A1

    公开(公告)日：2002-12-19

    申请号：US09882769

    申请日：2001-06-15

    Applicant: Applied Materials, Inc.

    Inventor： Yen-Kun Victor Wang ,  Mark Fodor ,  Chen-An Chen ,  Himanshu Pokharna ,  Son T. Nguyen ,  Kelly Fong ,  Inna Shmurun

    IPC: F27B005/14 ,  F27D011/00

    CPC classification number: H01L21/67748 ,  C23C16/0209 ,  C23C16/54 ,  C30B25/10 ,  C30B31/14 ,  H01L21/68

    Abstract: A heating chamber assembly for heating or maintaining the temperature of at least one wafer, employs thick film heater plates stacked at an appropriate distance to form a slot between each pair of adjacent heater plate surfaces. The heating chamber assembly may be employed adjacent one or more processing chambers to form a preheat station separate from the processing chambers, or may be incorporated in the load lock of one or more such processing chambers. The thick film heater plates are more efficient and have a better response time than conventional heat plates. A chamber surrounding the stack of heater plates is pressure sealable and may include a purge gas inlet for supply purge gas thereto under pressure. A door to the chamber opens to allow wafers to be inserted or removed and forms a pressure seal upon closing. The slots in the stack are alignable with the door for loading and unloading of wafers. The stack is mounted on a drive shaft that extends through the chamber where it interfaces with a drive that traverses the drive shaft in and out of the chamber to align various slots as desired.

    Abstract translation: 用于加热或保持至少一个晶片的温度的加热室组件使用以适当距离堆叠的厚膜加热器板，以在每对相邻的加热器板表面之间形成狭槽。 加热室组件可以在一个或多个处理室附近使用以形成与处理室分离的预热站，或者可以结合在一个或多个这样的处理室的装载锁中。 厚膜加热器板比传统加热板更有效，响应时间更长。 围绕堆叠的加热器板的室是可压力密封的，并且可以包括用于在压力下向其供应吹扫气体的吹扫气体入口。 通向室的门打开以允许晶片被插入或移除，并且在关闭时形成压力密封。 堆叠中的槽可与门对准，用于装载和卸载晶片。 该堆叠安装在驱动轴上，该驱动轴延伸穿过该室，在该驱动轴处与驱动轴相接合，该驱动器穿过驱动轴进出腔室，以根据需要对准各种槽。

    Chemical vapor deposition chamber
    7.
    发明申请
    Chemical vapor deposition chamber 审中-公开
    化学气相沉积室

    公开(公告)号：US20030019428A1

    公开(公告)日：2003-01-30

    申请号：US10134206

    申请日：2002-04-26

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Vincent W. Ku ,  Anzhong Chang ,  Anh N. Nguyen ,  Ming Xi ,  Xiaoxiong Yuan ,  Juan B. Tuscano JR. ,  Lawrence C. Lei ,  Seshadri Ganguli ,  Michael Yang ,  Chen-An Chen ,  Ling Chen

    IPC: C23C016/00 ,  C23F001/00 ,  H01L021/306

    CPC classification number: C23C16/45565 ,  C23C16/455 ,  C23C16/45512

    Abstract: A processing chamber is adapted to perform a deposition process on a substrate. The chamber includes a pedestal adapted to hold a substrate during deposition and a gas mixing and distribution assembly mounted above the pedestal. The gas mixing and distribution assembly includes a face plate, a dispersion plate mounted above the face plate, and a mixing fixture mounted above the dispersion plate. The face plate is adapted to present an emissivity invariant configuration to the pedestal. The mixing fixture includes a mixing chamber to which a process gas is flowed and an outer chamber surrounding the mixing chamber. The processing chamber further includes an enclosure and a liner installed inside the enclosure and surrounding the pedestal. The liner defines a gap between the liner and the enclosure. The gap has a minimum width adjacent an exhaust port and a maximum width at a point that is diametrically opposite the exhaust port.

    Abstract translation: 处理室适于在基板上执行沉积处理。 腔室包括适于在沉积期间保持基底的基座和安装在基座上方的气体混合和分配组件。 气体混合分配组件包括面板，安装在面板上方的分散板和安装在分散板上方的混合夹具。 面板适于向基座呈现发射率不变构型。 混合夹具包括处理气体流过的混合室和围绕混合室的外室。 处理室还包括外壳和安装在外壳内并围绕基座的衬垫。 衬套限定了衬套和外壳之间的间隙。 该间隙具有邻近排气口的最小宽度和在与排气口径向相反的点处的最大宽度。

    Method and apparatus for fluid flow control
    8.
    发明申请
    Method and apparatus for fluid flow control 失效
    流体流量控制的方法和装置

    公开(公告)号：US20030005958A1

    公开(公告)日：2003-01-09

    申请号：US09895104

    申请日：2001-06-29

    Applicant: Applied Materials, Inc.

    Inventor： Juan Carlos Rocha-Alvarez ,  Chen-An Chen ,  Shankar Venkataraman

    IPC: G05D011/00

    CPC classification number: G05D7/0635 ,  Y10T137/0363 ,  Y10T137/2524 ,  Y10T137/2529 ,  Y10T137/265

    Abstract: The invention provides a method and apparatus to control fluids such as process gases into two or more substrate process chambers. In one aspect, the gas flow from a first supply to a first processing region is used to control the gas flow of a second supply to a second processing region where the total gas flow is about equal to the total of the gas flows into both the first and second processing regions. In another aspect, the gas flow rate from the first supply for the first processing region is about equal to the gas flow rate for the second supply to the second processing region.

    Abstract translation: 本发明提供了一种方法和装置，用于将诸如工艺气体的流体控制成两个或多个衬底处理室。 在一个方面，从第一供应到第一处理区域的气体流被用于控制第二供应源到第二处理区域的气体流量，其中总气体流量大约等于气体流入两者的总和 第一和第二处理区域。 另一方面，来自第一处理区域的第一供应源的气体流量大约等于第二供给到第二处理区域的气体流量。

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