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    Deposition of tungsten films for dynamic random access memory (DRAM) applications
    2.
    发明申请
    Deposition of tungsten films for dynamic random access memory (DRAM) applications 审中-公开
    沉积用于动态随机存取存储器（DRAM）应用的钨膜

    公开(公告)号：US20030157760A1

    公开(公告)日：2003-08-21

    申请号：US10082048

    申请日：2002-02-20

    Applicant: Applied Materials, Inc.

    Inventor： Ming Xi ,  Soonil Hong ,  Hyungsuk A. Yoon ,  Michael X. Yang ,  Hui Zhang

    IPC: H01L021/8238

    CPC classification number: C23C16/06 ,  C23C16/45525 ,  H01L21/31604 ,  H01L27/10861 ,  H01L28/55 ,  H01L28/60 ,  H01L28/84 ,  H01L28/90

    Abstract: A method of tungsten deposition for dynamic random access memory (DRAM) applications is described. The DRAM devices typically include two electrodes separated by a dielectric material. At least one of the two electrodes comprises a tungsten-based material. The tungsten-based material may be formed using a cyclical deposition technique. Using the cyclical deposition technique, the tungsten-based material is formed by alternately adsorbing a tungsten-containing precursor and a reducing gas on a structure.

    Abstract translation: 描述了用于动态随机存取存储器（DRAM）应用的钨沉积的方法。 DRAM器件通常包括由电介质材料隔开的两个电极。 两个电极中的至少一个包括钨基材料。 钨基材料可以使用循环沉积技术形成。 使用循环沉积技术，通过在结构上交替吸附含钨前体和还原气体形成钨基材料。

    Pulsed nucleation deposition of tungsten layers
    3.
    发明申请
    Pulsed nucleation deposition of tungsten layers 有权
    钨层的脉冲成核沉积

    公开(公告)号：US20030127043A1

    公开(公告)日：2003-07-10

    申请号：US10194629

    申请日：2002-07-12

    Applicant: Applied Materials, Inc.

    Inventor： Xinliang Lu ,  Ping Jian ,  John Hyun Yoo ,  Ken Kaung Lai ,  Alfred W. Mak ,  Robert L. Jackson ,  Ming Xi

    IPC: C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

    CPC classification number: H01L21/28562 ,  C23C16/14 ,  C23C16/45523 ,  C23C16/45525 ,  C30B25/02 ,  C30B29/02

    Abstract: A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereafter, reaction by-products generated from the tungsten deposition are removed from the process chamber. After the reaction by-products are removed from the process chamber, a flow of the reducing gas is provided to the process chamber to react with residual tungsten-containing precursor remaining therein. Such a deposition process forms tungsten nucleation layers having good step coverage. The sequential deposition process of reacting pulses of the tungsten-containing precursor and the reducing gas, removing reaction by-products, and than providing a flow of the reducing gas to the process chamber may be repeated until a desired thickness for the tungsten nucleation layer is formed.

    Abstract translation: 使用顺序沉积工艺形成钨成核层的方法。 钨成核层通过在处理室中使含钨前体和还原气体的脉冲反应而在基底上沉积钨而形成。 此后，从处理室除去从钨沉积产生的反应副产物。 在从处理室中除去反应副产物之后，将还原气体的流动提供给处理室以与其中剩余的含钨前体反应。 这种沉积工艺形成具有良好阶梯覆盖的钨成核层。 可以重复将含钨前体和还原气体的脉冲反应，除去反应副产物以及向处理室提供还原气体流的顺序沉积过程，直到钨成核层的期望厚度为 形成。

    Chemical vapor deposition chamber
    4.
    发明申请
    Chemical vapor deposition chamber 审中-公开
    化学气相沉积室

    公开(公告)号：US20030019428A1

    公开(公告)日：2003-01-30

    申请号：US10134206

    申请日：2002-04-26

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Vincent W. Ku ,  Anzhong Chang ,  Anh N. Nguyen ,  Ming Xi ,  Xiaoxiong Yuan ,  Juan B. Tuscano JR. ,  Lawrence C. Lei ,  Seshadri Ganguli ,  Michael Yang ,  Chen-An Chen ,  Ling Chen

    IPC: C23C016/00 ,  C23F001/00 ,  H01L021/306

    CPC classification number: C23C16/45565 ,  C23C16/455 ,  C23C16/45512

    Abstract: A processing chamber is adapted to perform a deposition process on a substrate. The chamber includes a pedestal adapted to hold a substrate during deposition and a gas mixing and distribution assembly mounted above the pedestal. The gas mixing and distribution assembly includes a face plate, a dispersion plate mounted above the face plate, and a mixing fixture mounted above the dispersion plate. The face plate is adapted to present an emissivity invariant configuration to the pedestal. The mixing fixture includes a mixing chamber to which a process gas is flowed and an outer chamber surrounding the mixing chamber. The processing chamber further includes an enclosure and a liner installed inside the enclosure and surrounding the pedestal. The liner defines a gap between the liner and the enclosure. The gap has a minimum width adjacent an exhaust port and a maximum width at a point that is diametrically opposite the exhaust port.

    Abstract translation: 处理室适于在基板上执行沉积处理。 腔室包括适于在沉积期间保持基底的基座和安装在基座上方的气体混合和分配组件。 气体混合分配组件包括面板，安装在面板上方的分散板和安装在分散板上方的混合夹具。 面板适于向基座呈现发射率不变构型。 混合夹具包括处理气体流过的混合室和围绕混合室的外室。 处理室还包括外壳和安装在外壳内并围绕基座的衬垫。 衬套限定了衬套和外壳之间的间隙。 该间隙具有邻近排气口的最小宽度和在与排气口径向相反的点处的最大宽度。

    Low-resistivity tungsten from high-pressure chemical vapor deposition using metal-organic precursor
    5.
    发明申请
    Low-resistivity tungsten from high-pressure chemical vapor deposition using metal-organic precursor 审中-公开
    使用金属有机前体的高压化学气相沉积的低电阻率钨

    公开(公告)号：US20030008070A1

    公开(公告)日：2003-01-09

    申请号：US09880465

    申请日：2001-06-12

    Applicant: Applied Materials,Inc

    Inventor： Sean Michael Seutter ,  Seshadri Ganguli ,  Mei Chang ,  Michael X. Yang ,  Ming Xi

    IPC: C23C016/00

    CPC classification number: C23C16/16 ,  H01L21/28556 ,  H01L21/28568

    Abstract: Provided herein is a method of depositing a low resistivity tungsten film onto a wafer comprising the steps of introducing a metalorganic tungsten-containing compound into a deposition chamber of a CVD apparatus; maintaining the deposition chamber at a pressure and the wafer at a temperature suitable for the high pressure chemical vapor deposition of the tungsten film onto the wafer; thermally decomposing the tungsten-containing compound in the deposition chamber; and vapor-depositing the tungsten film onto the wafer thereby forming a low-resistivity tungsten film. Specifically provided is a method of depositing a low-resistivity tungsten film by high pressure MOCVD using tungsten hexacarbonyl as the precursor. Also provided is a low-resistivity tungsten film.

    Abstract translation: 本文提供了一种在晶片上沉积低电阻率钨膜的方法，包括将金属有机含钨化合物引入CVD设备的沉积室中的步骤; 将沉积室保持在压力和晶片处于适合于将钨膜高压化学气相沉积到晶片上的温度; 在沉积室中热分解含钨化合物; 并将钨膜气相沉积到晶片上，从而形成低电阻率钨膜。 具体提供的是使用六羰基钨作为前体的通过高压MOCVD沉积低电阻率钨膜的方法。 还提供了低电阻率钨膜。

    Multi-chemistry electrochemical processing system
    6.
    发明申请
    Multi-chemistry electrochemical processing system 审中-公开
    多化学电化学处理系统

    公开(公告)号：US20040118694A1

    公开(公告)日：2004-06-24

    申请号：US10438624

    申请日：2003-05-14

    Applicant: Applied Materials, Inc.

    Inventor： Michael X. Yang ,  Ming Xi ,  Russell C. Ellwanger ,  Eric B. Britcher

    IPC: C25D007/12

    CPC classification number: C25D17/001 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/67011 ,  H01L21/67167 ,  H01L21/6723 ,  H01L21/76877

    Abstract: Embodiments of the invention generally provide an electrochemical processing system configured to provide multiple chemistries for a single plating process. The multiple chemistries are generally delivered to individual plating cells positioned on the processing system. The individual chemistries may generally be used to conduct direct plating on a barrier layer, alloy plating, plating on a thin seed layer, optimized feature fill and bulk fill plating, plating with minimized defects, and/or any other plating process wherein multiple chemistries may be utilized to take advantage of the desirable characteristics of each chemistry.

    Abstract translation: 本发明的实施方案通常提供一种电化学处理系统，其被配置为为单一电镀工艺提供多种化学物质。 多个化学物质通常被输送到位于处理系统上的各个电镀单元。 各种化学物质通常可用于在阻挡层上进行直接电镀，合金电镀，薄种子层上的电镀，优化的特征填充和填充电镀，具有最小化缺陷的电镀，和/或其中多个化学物质可以 用于利用每种化学物质的理想特性。

    Method of titanium/titanium nitride integration
    9.
    发明申请
    Method of titanium/titanium nitride integration 失效

    公开(公告)号：US20010001297A1

    公开(公告)日：2001-05-17

    申请号：US09737154

    申请日：2000-12-14

    Applicant: APPLIED MATERIALS, INC.,

    Inventor： Shulin Wang ,  Ming Xi ,  Zvi Lando ,  Mei Chang

    IPC: H01L021/3205 ,  H01L021/4763 ,  H01L021/44

    CPC classification number: H01L21/76855 ,  H01L21/28518 ,  H01L21/76843

    Abstract: A method of film processing comprises forming an integrated titanium/titanium nitride (Ti/TiN) film structure having an intermediate layer. The intermediate layer comprises species containing Si, and preferably containing Si and Ti, such as titanium silicide (TiSix), or TiSixOy, among others. The intermediate layer protects the underlying Ti film against chemical attack during subsequent TiN deposition using a titanium tetrachloride (TiCl4)-based chemistry. The method allows reliable Ti/TiN film integration to be achieved with excellent TiN step coverage. For example, the film structure can be used as an effective barrier layer in integrated circuit fabrication.

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