Electroplating controller with power based head-room control

    公开(公告)号:US11159159B1

    公开(公告)日:2021-10-26

    申请号:US17015612

    申请日:2020-09-09

    Abstract: A method of controlling a headroom voltage of a transistor stage of an electroplating system to maintain a target power dissipation across the transistor stage may include maintaining a headroom voltage in the transistor stage for a load in the electroplating system. The method may also include measuring an instantaneous power dissipation in the transistor stage and generating a difference output representing a difference between the instantaneous power dissipation in the transistor stage and the target power dissipation in the transistor stage. A voltage across the transistor stage and the load may then be adjusted using the difference output such that the headroom voltage in the transistor stage is adjusted to maintain the target power dissipation in the transistor stage.

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