公开(公告)号：US10516110B2

公开(公告)日：2019-12-24

申请号：US15207708

申请日：2016-07-12

申请人： ARM Ltd.

发明人： Kimberly Gay Reid ,  Lucian Shifren

IPC分类号： H01L49/00 ,  C23C16/34 ,  H01L45/00 ,  C23C16/30 ,  C23C16/56

摘要： Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described, which may be useful in avoiding formation of a potentially resistive oxide layer at an interfacial surface between a conductive substrate, for example, and a correlated electron material.

公开(公告)号：US10418553B1

公开(公告)日：2019-09-17

申请号：US15939183

申请日：2018-03-28

申请人： ARM Ltd.

发明人： Lucian Shifren ,  Carlos Alberto Paz de Araujo ,  Jolanta Bozena Celinska ,  Christopher Randolph McWilliams

IPC分类号： H01L45/00

摘要： Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may comprise depositing metal layers, such layers of a transition metal, over a conductive substrate. Dopant layers may subsequently be deposited on the layers of the transition metal, followed by annealing of the layers of transition metal and dopant layers. Responsive to annealing, dopant from the dopant layers may diffuse into the one or more layers of transition metal, thereby forming a CEM.

公开(公告)号：US10276795B2

公开(公告)日：2019-04-30

申请号：US15237357

申请日：2016-08-15

申请人： ARM Ltd.

发明人： Kimberly Gay Reid ,  Lucian Shifren

IPC分类号： H01L45/00 ,  C23C16/455 ,  C23C16/48

摘要： Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described, in which an ultraviolet light source is utilized during fabrication of a correlated electron material. In embodiments, use of ultraviolet light may decrease a likelihood of diffusion of atomic and/or molecular components of a substrate that may bring about undesirable electrical performance of a CEM device.

公开(公告)号：US10217935B2

公开(公告)日：2019-02-26

申请号：US15371457

申请日：2016-12-07

申请人： ARM Ltd.

发明人： Carlos Alberto Paz de Araujo ,  Jolanta Bozena Celinska ,  Christopher Randolph McWilliams ,  Lucian Shifren ,  Kimberly Gay Reid

IPC分类号： H01L45/00

摘要： Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described in which a correlated electron material film may be formed over a conductive substrate by converting at least a portion of the conductive substrate to CEM.

公开(公告)号：US20180175292A1

公开(公告)日：2018-06-21

申请号：US15890222

申请日：2018-02-06

申请人： ARM Ltd.

发明人： Kimberly Gay Reid ,  Lucian Shifren

IPC分类号： H01L45/00 ,  H01L49/00 ,  H01L27/24

CPC分类号： H01L45/1253 ,  H01L27/2427 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1616 ,  H01L45/1641 ,  H01L49/003

摘要： Subject matter disclosed herein may relate to fabrication of layered correlated electron materials (CEMs) in which a first group of one or more layers may comprise a first concentration of a dopant species, and wherein a second group of one or more layers may comprise a second concentration of a dopant species. In other embodiments, a CEM may comprise one or more regions of graded concentration of a dopant species.

公开(公告)号：US20180159031A1

公开(公告)日：2018-06-07

申请号：US15367052

申请日：2016-12-01

申请人： ARM Ltd.

发明人： Carlos Alberto Paz de Araujo ,  Jolanta Bozena Celinska ,  Kimberly Gay Reid ,  Lucian Shifren

IPC分类号： H01L45/00

CPC分类号： H01L45/1253 ,  H01L27/249 ,  H01L45/04 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1633

摘要： Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In embodiments, processes are described in which conductive traces may be formed on or over an insulating material. Responsive to forming voids in the insulating material, localized portions of the conductive traces in contact with the voids may be exposed to gaseous oxidizing agents, which may convert the localized portions of the conductive traces to a CEM. In embodiments, an electrode material may be deposited within the voids to contact the localized portion of conductive trace converted to the CEM.

公开(公告)号：US09755146B2

公开(公告)日：2017-09-05

申请号：US14850213

申请日：2015-09-10

申请人： ARM Ltd.

发明人： Lucian Shifren ,  Greg Yeric

IPC分类号： G11C13/00 ,  H01L49/00 ,  H01L45/00 ,  G11C7/20

CPC分类号： H01L49/003 ,  G11C7/20 ,  G11C13/0007 ,  G11C13/0038 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2213/15 ,  G11C2213/73 ,  H01L45/04 ,  H01L45/146 ,  H01L45/1641

摘要： Subject matter disclosed herein may relate to correlated electron switches that are capable of asymmetric set or reset operations.

公开(公告)号：US20170244027A1

公开(公告)日：2017-08-24

申请号：US15048778

申请日：2016-02-19

申请人： ARM Ltd.

发明人： Kimberly Gay Reid ,  Lucian Shifren

IPC分类号： H01L45/00

CPC分类号： H01L45/08 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1616

摘要： A method for forming a thin film comprising a metal, metal compound, or metal oxide on a substrate, which method comprises forming one or more thin film layers of a metal or metal oxide by a deposition process employing reactant precursors and/or relative amounts thereof which are selected to deposit a thin film layer with a controlled amount of dopant derived from at least one reactant precursor.

公开(公告)号：US20170213592A1

公开(公告)日：2017-07-27

申请号：US15416799

申请日：2017-01-26

申请人： ARM Ltd.

发明人： Azeez Bhavnagarwala ,  Robert Campbell Aitken ,  Lucian Shifren

IPC分类号： G11C13/00

CPC分类号： G11C13/0069 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/003 ,  G11C13/004 ,  G11C2013/0054 ,  G11C2213/75

摘要： Disclosed are methods, systems and devices for operation of dual non-volatile memory devices. In one aspect, a pair of non-volatile memory device coupled in series may be placed in complementary memory states any one of multiple memory states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device.

公开(公告)号：US20170092858A1

公开(公告)日：2017-03-30

申请号：US14871692

申请日：2015-09-30

申请人： ARM Ltd.

发明人： Lucian Shifren

IPC分类号： H01L49/00

CPC分类号： H01L49/003 ,  G11C11/5685 ,  G11C13/0007 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1683

摘要： Subject matter disclosed herein may relate to correlated electron switch devices, and may relate more particularly to integrated circuit fabrics including correlated electron switch devices having various impedance characteristics.