公开(公告)号：US20200212237A1

公开(公告)日：2020-07-02

申请号：US16812668

申请日：2020-03-09

申请人： ARRAY PHOTONICS, INC.

发明人： RADEK ROUCKA ,  SABEUR SIALA ,  AYMERIC MAROS ,  TING LIU ,  FERRAN SUAREZ ,  EVAN PICKETT

IPC分类号： H01L31/0304 ,  H01L33/30 ,  H01L31/18 ,  H01L27/144

摘要： Semiconductor optoelectronic devices having a dilute nitride active layer are disclosed. In particular, the semiconductor devices have a dilute nitride active layer with a bandgap within a range from 0.7 eV and 1 eV. Photodetectors comprising a dilute nitride active layer have a responsivity of greater than 0.6 A/W at a wavelength of 1.3 μm.

公开(公告)号：US20200052137A1

公开(公告)日：2020-02-13

申请号：US16535874

申请日：2019-08-08

申请人： ARRAY PHOTONICS, INC.

发明人： AYMERIC MAROS ,  FERRAN SUAREZ ,  JACOB THORP ,  MICHAEL SHELDON ,  TING LIU

IPC分类号： H01L31/0304 ,  H01S5/183 ,  H01S5/30 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/0725 ,  H01L31/18 ,  H01L33/06 ,  H01L33/00 ,  H01L33/10 ,  H01L33/12 ,  H01L33/32 ,  H01L33/46 ,  H01L33/60

摘要： Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride active layer and at least one semiconductor material overlying the dilute nitride active layer are disclosed. Hybrid epitaxial growth and the use of hydrogen diffusion barrier layers to minimize hydrogen diffusion into the dilute nitride active layer are used to fabricate high-efficiency multijunction solar cells and photonic devices. Hydrogen diffusion barriers can be formed through the use of layer thickness, composition, doping and/or strain.

公开(公告)号：US20200295221A1

公开(公告)日：2020-09-17

申请号：US16810427

申请日：2020-03-05

申请人： ARRAY PHOTONICS, INC.

发明人： FERRAN SUAREZ ,  DING DING ,  AYMERIC MAROS

IPC分类号： H01L31/107 ,  H01L31/0304

摘要： Semiconductor optoelectronic devices having a dilute nitride active region are disclosed. In particular, the semiconductor devices have a dilute nitride active region with at least two bandgaps within a range from 0.7 eV and 1.4 eV. Photodetectors comprising a dilute nitride active region with at least two bandgaps have a reduced dark current when compared to photodetectors comprising a dilute nitride active region with a single bandgap equivalent to the smallest bandgap of the at least two bandgaps.