专利检索 ap:("ARRAY PHOTONICS, INC.") AND inv:"JACOB THORP" 第 1 页

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发明申请
HYDROGEN DIFFUSION BARRIER FOR HYBRID SEMICONDUCTOR GROWTH 审中-公开

公开(公告)号：US20200052137A1

公开(公告)日：2020-02-13

申请号：US16535874

申请日：2019-08-08

申请人： ARRAY PHOTONICS, INC.

发明人： AYMERIC MAROS , FERRAN SUAREZ , JACOB THORP , MICHAEL SHELDON , TING LIU

IPC分类号： H01L31/0304 , H01S5/183 , H01S5/30 , H01L31/02 , H01L31/0232 , H01L31/0725 , H01L31/18 , H01L33/06 , H01L33/00 , H01L33/10 , H01L33/12 , H01L33/32 , H01L33/46 , H01L33/60

摘要： Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride active layer and at least one semiconductor material overlying the dilute nitride active layer are disclosed. Hybrid epitaxial growth and the use of hydrogen diffusion barrier layers to minimize hydrogen diffusion into the dilute nitride active layer are used to fabricate high-efficiency multijunction solar cells and photonic devices. Hydrogen diffusion barriers can be formed through the use of layer thickness, composition, doping and/or strain.