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公开(公告)号：US09309148B2
公开(公告)日：2016-04-12
申请号：US14152078
申请日：2014-01-10
IPC分类号： C03C17/245 , C03C17/00 , C03B25/08 , C23C16/455 , C23C16/46
CPC分类号： C03C17/2456 , C03B25/08 , C03C17/002 , C23C16/45572 , C23C16/45595 , C23C16/46
摘要： An area S (m2) of a facing surface of each of injectors which faces a glass ribbon is set so as to satisfy: S≦(0.0116×P×Cg×T)/{ε×F×σ(Tgla4−Tinj4)}, wherein P is an output (ton/day) of the glass ribbon; Cg is a specific heat (J/(kg·° C.)) of the glass; T is an acceptable temperature drop (° C.); ε is radiation factor; F is a surface-to-surface view factor; σ is Boltzmann's constant; Tgla is a temperature (K) of the glass ribbon represented by K=(Tin+Tout)/2 where Tin and Tout are measured values of the glass ribbon at the inlet and outlet of the injector, respectively; and Tinj is a temperature (K) of the facing surface of the injector.
摘要翻译： 将每个喷射器的面对玻璃带的面对面的面积S（m2）设定为满足：S＆NlE;（0.0116×P×Cg×T）/ {＆egr;×F×＆sgr（Tgla4-Tinj4 ）}，其中P是玻璃带的输出（吨/天）; Cg是玻璃的比热（J /（kg·℃））; T是可接受的温度降（℃）; ＆egr 是放射因子; F是一个表面到地面的视图因子; ＆sgr 是玻尔兹曼常数; Tgla是由K =（Tin + Tout）/ 2表示的玻璃带的温度（K），其中Tin和Tout分别是在喷射器的入口和出口处的玻璃带的测量值; Tinj是喷射器的面对表面的温度（K）。
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公开(公告)号：US20150246845A1
公开(公告)日：2015-09-03
申请号：US14716181
申请日：2015-05-19
发明人： Atsushi Seki , Wataru Nishida , Kuniaki Hiromatsu
IPC分类号： C03C17/245 , C23C16/44 , C23C16/455 , C23C16/40
CPC分类号： C03C17/245 , C03C2217/213 , C03C2218/1525 , C23C16/401 , C23C16/402 , C23C16/44 , C23C16/455 , C23C16/45514 , C23C16/45595 , C23C16/545 , H01L31/0392 , H02S40/22 , Y02E10/52
摘要： A method for forming a SiO2 thin film on a glass substrate by an online atmospheric pressure CVD method, which uses, as a raw material gas supply means, a post mixing type raw material supply means of separately supplying a process gas 1 which contains monosilane (SiH4) as a main raw material gas and a process gas 2 which contains oxygen (O2) as an auxiliary raw material gas and mixing the process gases 1 and 2 on the glass substrate, wherein the flow rate of the monosilane (SiH4) per unit width is at least 1.0 NL/min·m, and the process gas 1 contains ethylene (C2H4) in an amount such that the concentration ratio to the monosilane (SiH4) (C2H4 (mol %)/SiH4 (mol %)) is at most 3.2, whereby the deposition rate for forming a SiO2 thin film is improved.
摘要翻译： 通过在线大气压CVD法在玻璃基板上形成SiO 2薄膜的方法，该方法使用分别供给含有甲硅烷的处理气体1的后混合型原料供给机构作为原料气体供给装置， SiH 4）和作为辅助原料气体的氧气（O 2）的处理气体2，并将处理气体1和2混合在玻璃基板上，其中，每单位硅烷（SiH 4）的流量 宽度至少为1.0NL /分·米，处理气体1含有乙烯（C 2 H 4），其量使得与甲硅烷（SiH 4）（C 2 H 4（摩尔％）/ SiH 4（摩尔％））的浓度比在 最为3.2，由此提高了形成SiO 2薄膜的沉积速率。
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公开(公告)号：US20140123707A1
公开(公告)日：2014-05-08
申请号：US14152068
申请日：2014-01-10
IPC分类号： C03C17/245 , C03B25/08
CPC分类号： C03C17/2456 , C03B25/08 , C03C17/002 , C03C2218/1525 , C23C16/402 , C23C16/405 , C23C16/407 , C23C16/45578 , C23C16/46 , C23C16/52 , C23C16/545 , H01L31/0392 , H01L31/1884 , Y02E10/50
摘要： A method for manufacturing a laminated film-coated glass substrate in which a laminated film is formed on a glass ribbon by a CVD method by means of a plurality of injectors disposed in the annealing furnace, wherein: the laminated film is formed at Tg+50° C. or lower; and in each of the injectors, if a quantity of heat exchanged between the injector and the glass ribbon is expressed by Q1 (kW), a quantity of heat exchanged between a heater paired with the injector and the glass ribbon is expressed by Q2 (kW), and an output of the glass is expressed by P (tons/day), then the relational expression |Q1|−P×0.116≦|Q2|≦|Q1| is satisfied.
摘要翻译： 一种层叠薄膜涂覆玻璃基板的制造方法，其中通过CVD法在玻璃带上形成的层叠薄膜包覆玻璃基板的方法，该方法通过设置在退火炉中的多个注射器形成，其中：层压膜形成为Tg + 50 ℃或更低; 并且在每个喷射器中，如果在喷射器和玻璃带之间交换的热量以Q1（kW）表示，则与喷射器成对的加热器与玻璃带之间交换的热量由Q2（kW ），玻璃的输出用P（吨/天）表示，则关系式| Q1 | -P×0.116＆nlE; | Q2 |＆nlE; | Q1 | 满意
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