公开(公告)号：US09891521B2

公开(公告)日：2018-02-13

申请号：US14886571

申请日：2015-10-19

Applicant: ASM IP Holding B.V.

Inventor： DongSeok Kang

IPC: H01L21/00 ,  G03F7/00 ,  H01L21/033 ,  H01L21/027 ,  H01L21/02

CPC classification number: G03F7/00 ,  G03F7/40 ,  H01L21/02164 ,  H01L21/0273 ,  H01L21/0332

Abstract: Disclosed herein is a method of depositing a thin film. An exemplary embodiment of the present invention provides a method of depositing a thin film, including: a step of forming a protective layer containing silicon on a substrate; and a step of forming a sacrificial layer on the protective layer, wherein the protective layer and the sacrificial layer may include silicon (Si), and the step of forming the protective layer may include a step of supplying a precursor containing silicon and a step of supplying plasma activating a purge gas.

公开(公告)号：US20230392278A1

公开(公告)日：2023-12-07

申请号：US18235589

申请日：2023-08-18

Applicant: ASM IP Holding B.V.

Inventor： SungBae Kim ,  YongMin Yoo ,  SeungWoo Choi ,  DongSeok Kang ,  JongWon Shon

IPC: C25D11/04 ,  C23C16/44 ,  C25D11/02 ,  H01L21/687 ,  H01L21/67 ,  C23C16/458 ,  C23C16/509 ,  H01J37/32 ,  C23C16/455

CPC classification number: C25D11/04 ,  C23C16/4404 ,  C23C16/4409 ,  C25D11/022 ,  H01L21/68735 ,  H01L21/6719 ,  C23C16/4583 ,  C23C16/5096 ,  H01J37/3244 ,  C23C16/45525 ,  H01J37/32715 ,  H01L21/68757 ,  C23C16/4412 ,  H01J37/32477

Abstract: A substrate supporting plate that provides improved processing uniformity is disclosed. The substrate supporting plate may include a substrate mounting portion and a peripheral portion surrounding the substrate mounting portion. A portion of the peripheral portion may include an insulating layer. A central portion of the top surface may not include the insulating layer.

公开(公告)号：US20160141172A1

公开(公告)日：2016-05-19

申请号：US14886571

申请日：2015-10-19

Applicant: ASM IP Holding B.V.

Inventor： DongSeok Kang

IPC: H01L21/02

CPC classification number: G03F7/00 ,  G03F7/40 ,  H01L21/02164 ,  H01L21/0273 ,  H01L21/0332

Abstract: Disclosed herein is a method of depositing a thin film. An exemplary embodiment of the present invention provides a method of depositing a thin film, including: a step of forming a protective layer containing silicon on a substrate; and a step of forming a sacrificial layer on the protective layer, wherein the protective layer and the sacrificial layer may include silicon (Si), and the step of forming the protective layer may include a step of supplying a precursor containing silicon and a step of supplying plasma activating a purge gas.

Abstract translation: 本文公开了沉积薄膜的方法。 本发明的一个示例性实施例提供一种沉积薄膜的方法，包括：在衬底上形成含有硅的保护层的步骤; 以及在所述保护层上形成牺牲层的步骤，其中所述保护层和所述牺牲层可以包括硅（Si），并且形成所述保护层的步骤可以包括提供包含硅的前体的步骤和步骤 提供激活吹扫气体的等离子体。