公开(公告)号：US20230340663A1

公开(公告)日：2023-10-26

申请号：US18137930

申请日：2023-04-21

Applicant: ASM IP Holding B.V.

Inventor： Fanyong Ran ,  Zecheng Liu ,  Tomohiro Kubota ,  Takashi Yoshida ,  Kai Okabe

IPC: C23C16/455 ,  C23C16/32 ,  C23C16/52

CPC classification number: C23C16/32 ,  C23C16/45531 ,  C23C16/4554 ,  C23C16/45553 ,  C23C16/52

Abstract: Methods of forming a silicon oxycarbide layer on a surface of a substrate are disclosed. Exemplary methods include providing an oxygen-free reactant to a reaction chamber and performing one or more deposition cycles, wherein each deposition cycle includes providing a silicon precursor to the reaction chamber for a silicon precursor pulse period and providing plasma power for a plasma power period to form the silicon oxycarbide layer. Exemplary silicon precursors comprise a molecule comprising silicon, oxygen, carbon, and optionally nitrogen. The silicon precursor can further include one or more of (i) one or two silicon-oxygen bonds, (ii) one or two silicon-carbon bonds, or (iii) one carbon-carbon double bond.

公开(公告)号：US20240377751A1

公开(公告)日：2024-11-14

申请号：US18659735

申请日：2024-05-09

Applicant: ASM IP Holding B.V.

Inventor： João Ricardo Antunes Afonso ,  Fanyong Ran

IPC: G03F7/16 ,  G03F7/075

Abstract: Methods of forming structures including a silicon germanium oxide photoresist underlayer and structures including the photoresist underlayer are disclosed. The methods can further include forming a passivation layer and/or an adhesion layer.

公开(公告)号：US20240361695A1

公开(公告)日：2024-10-31

申请号：US18644370

申请日：2024-04-24

Applicant: ASM IP Holding B.V.

Inventor： João Ricardo Antunes Afonso ,  Yiting Sun ,  Fanyong Ran ,  Jerome Samuel Nicolas ,  Zecheng Liu

IPC: G03F7/16 ,  G03F7/004 ,  G03F7/075

CPC classification number: G03F7/167 ,  G03F7/0043 ,  G03F7/0751 ,  G03F7/0755

Abstract: Methods of forming structures including an adhesion layer and structures including the adhesion layer are disclosed. The adhesion layer may include nitrogen. The method can include forming a metal oxide resist overlying and in contact with the adhesion layer. Exemplary methods further include forming the photoresist underlayer.

公开(公告)号：US20240170282A1

公开(公告)日：2024-05-23

申请号：US18384448

申请日：2023-10-27

Applicant: ASM IP Holding B.V.

Inventor： Jerome Samuel Nicolas ,  Fanyong Ran ,  João Ricardo Antunes Afonso ,  Yiting Sun

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/027

CPC classification number: H01L21/02304 ,  C23C16/45544 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0271

Abstract: Methods of forming structures including a photoresist underlayer and an adhesion layer and structures including the photoresist underlayer and adhesion layer are disclosed. Exemplary methods include forming the photoresist underlayer and forming an adhesion layer using a cyclical deposition process. The adhesion layer can be formed within the same reaction chamber used to form the photoresist underlayer. Properties of the adhesion layer can be tuned based on a selected photoresist by varying one or more process conditions.

公开(公告)号：US20230393477A1

公开(公告)日：2023-12-07

申请号：US18203873

申请日：2023-05-31

Applicant: ASM IP Holding B.V.

Inventor： Fanyong Ran

IPC: G03F7/11 ,  H01L21/027 ,  C23C16/455 ,  C23C16/40 ,  C23C16/32

CPC classification number: G03F7/11 ,  H01L21/0273 ,  C23C16/45536 ,  C23C16/401 ,  C23C16/405 ,  C23C16/407 ,  C23C16/325

Abstract: Methods of forming structures including photoresist underlayers and adhesion layers are disclosed. Exemplary methods include forming an adhesion layer using plasma-enhanced cyclical deposition processes.

公开(公告)号：US20230288810A1

公开(公告)日：2023-09-14

申请号：US18116973

申请日：2023-03-03

Applicant: ASM IP Holding B.V.

Inventor： Fanyong Ran ,  Jérôme Samuel Nicolas

IPC: G03F7/16 ,  G03F7/11

CPC classification number: G03F7/167 ,  G03F7/11

Abstract: Methods of forming structures including photoresist underlayers including a bulk layer and an adhesion layer are disclosed. Exemplary methods include forming the bulk layer and forming an adhesion layer using plasma-enhanced cyclical deposition processes. The adhesion layer can be formed within the same reaction chamber used to form the bulk layer.