公开(公告)号：US20140233025A1

公开(公告)日：2014-08-21

申请号：US14264547

申请日：2014-04-29

Applicant: ASML, Netherlands B.V.

Inventor： Arie Jeffrey Maria DEN BOEF ,  Arno Jan BLEEKER ,  Youri Johannes Laurentius Maria VAN DOMMELEN ,  Mircea DUSA ,  Antoine Gaston Marie KIERS ,  Paul Frank LUEHRMANN ,  Henricus Petrus Maria PELLEMANS ,  Maurits VAN DER SCHAAR ,  Cedric Desire GROUWSTRA ,  Markus Gerardus Martinus VAN KRAAIJ

IPC: G01N21/88

CPC classification number: G01N21/8806 ,  G03F7/70341 ,  G03F7/70633 ,  G03F7/7065 ,  G03F9/7034

Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.

Abstract translation: 通过在高数值孔径透镜的光瞳平面中测量作为辐射的结果的角度分辨光谱从衬底反射来确定衬底的性质的装置和方法。 该属性可以是角度和波长相关的，并且可以包括TM和TE偏振辐射的强度及其相对相位差。

公开(公告)号：US20210208083A1

公开(公告)日：2021-07-08

申请号：US17192276

申请日：2021-03-04

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey DEN BOEF ,  Amo Jan BLEEKER ,  Youri Johannes VAN DOMMELEN ,  Mircea DUSA ,  Antoine Gaston Marie KIERS ,  Paul Frank LUEHRMANN ,  Henricus Petrus Maria PELLEMANS ,  Maurits VAN DER SCHAAR ,  Cédric Désiré GROUWSTRA ,  Markus Geradus Maritinus VAN KRAAIJ

IPC: G01N21/88 ,  G03F7/20 ,  G03F9/00

Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.

公开(公告)号：US20190170657A1

公开(公告)日：2019-06-06

申请号：US16270155

申请日：2019-02-07

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey Maria DEN BOEF ,  Arno Jan BLEEKER ,  Youri Johannes Laurentiu VAN DOMMELEN ,  Mircea DUSA ,  Antoine Gaston Marie KIERS ,  Paul Frank LUEHRMANN ,  Henricus Petrus Maria PELLEMANS ,  Maurits VAN DER SCHAAR ,  Cedric Desire GROUWSTRA ,  Markus Gerardus Martinus VAN KRAAIJ

IPC: G01N21/88 ,  G03F7/20 ,  G03F9/00

Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.

公开(公告)号：US20160170311A1

公开(公告)日：2016-06-16

申请号：US14905611

申请日：2014-08-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Emil Peter SCHMITT-WEAVER ,  Wolfgang HENKE ,  Thomas Leo HOOGENBOOM ,  Pavel IZIKSON ,  Paul Frank LUEHRMANN ,  Daan Maurits SLOTBOOM ,  Jens STAECKER ,  Alexander YPMA

IPC: G03F7/20

CPC classification number: G03F7/70516 ,  G03F7/70491 ,  G03F7/70525 ,  G03F7/70625 ,  G03F7/70633

Abstract: A lithography system configured to apply a pattern to a substrate, the system including a lithography apparatus configured to expose a layer of the substrate according to the pattern, and a machine learning controller configured to control the lithography system to optimize a property of the pattern, the machine learning controller configured to be trained on the basis of a property measured by a metrology unit configured to measure the property of the exposed pattern in the layer and/or a property associated with exposing the pattern onto the substrate, and to correct lithography system drift by adjusting one or more selected from: the lithography apparatus, a track unit configured to apply the layer on the substrate for lithographic exposure, and/or a control unit configured to control an automatic substrate flow among the track unit, the lithography apparatus, and the metrology unit.

Abstract translation: 一种光刻系统，被配置为将图案应用于基底，所述系统包括被配置为根据图案暴露基底层的光刻设备，以及机器学习控制器，被配置为控制光刻系统以优化图案的特性， 机器学习控制器被配置为基于由测量单元测量的属性来进行训练，所述测量单元被配置成测量所述层中的暴露图案的性质和/或与将图案暴露于衬底相关联的属性，并且修正光刻系统 通过调整选自以下的一个或多个漂移：光刻设备，被配置为将该层施加在用于光刻曝光的基板上的轨道单元和/或控制单元，被配置为控制轨道单元，光刻设备之间的自动衬底流动， 和计量单位。