公开(公告)号：US20240045341A1

公开(公告)日：2024-02-08

申请号：US18266246

申请日：2021-12-09

Applicant: ASML NETHERLANDS B.V. ,  Cymer, LLC

Inventor： Willard Earl CONLEY ,  Duan-Fu Stephen HSU ,  Joshua Jon THORNES ,  Johannes Jacobus Matheus BASELMANS

IPC: G03F7/00 ,  G03F7/20

CPC classification number: G03F7/70575 ,  G03F7/70583 ,  G03F7/70025 ,  G03F7/2004

Abstract: A method for improving a lithographic process of imaging a portion of a design layout onto a substrate using a lithographic apparatus. The method includes computing a multi-variable cost function that is a function of: (i) a plurality of design variables that affect characteristics of the lithographic process and (ii) a radiation bandwidth of a radiation source of the lithographic apparatus; and reconfiguring one or more of the characteristics (e.g., EPE, image contrast, resist, etc.) of the lithographic process by adjusting one or more of the design variables (e.g., source, mask layout, bandwidth, etc.) until a termination condition is satisfied. The termination condition includes a speckle characteristic (e.g., a speckle contrast) maintained within a speckle specification associated with the radiation source and also maintaining an image contrast associated with the lithographic process within a desired range. The speckle characteristic being a function of the radiation bandwidth.

公开(公告)号：US20230213871A1

公开(公告)日：2023-07-06

申请号：US18000087

申请日：2021-05-14

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： Sebastianus Adrianus GOORDEN ,  Filippo ALPEGGIANI ,  Simon Reinald HUISMAN ,  Johannes Jacobus Matheus BASELMANS ,  Haico Victor KOK ,  Mohamed SWILLAM ,  Arjan Johannes Anton BEUKMAN

IPC: G03F7/20 ,  G03F9/00 ,  G01B11/27

CPC classification number: G03F7/70625 ,  G01B11/272 ,  G03F9/7049

Abstract: A metrology system includes a radiation source, first, second, and third optical systems, and a processor. The first optical system splits the radiation into first and second beams of radiation and impart one or more phase differences between the first and second beams. The second optical system directs the first and second beams toward a target structure to produce first and second scattered beams of radiation. The third optical system interferes the first and second scattered beams at an imaging detector. The imaging detector generates a detection signal based on the interfered first and second scattered beams. The metrology system modulates one or more phase differences of the first and second scattered beams based on the imparted one or more phase differences. The processor analyzes the detection signal to determine a property of the target structure based on at least the modulated one or more phase differences.

公开(公告)号：US20190163072A1

公开(公告)日：2019-05-30

申请号：US16098350

申请日：2017-04-05

Applicant: ASML Netherlands B.V.

Inventor： Carolus Johannes Catharina SCHOORMANS ,  Johannes Jacobus Matheus BASELMANS ,  Engelbertus Antonius Fransiscus VAN DER PASCH ,  Johannes Aidegonda Theodorus Marie VAN DEN HOMBERG ,  Maksym Yurllovych SLADKOV ,  Andreas Johannes Antonius BROUNS ,  Alexander Viktorovych PADIY

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70516 ,  G03F1/42 ,  G03F7/70725 ,  G03F7/70775 ,  G03F7/7085 ,  G03F9/7019 ,  G03F9/7088

Abstract: A lithographic method for measuring a position of a target grating with a mask sensor apparatus which comprises a plurality of detector modules each comprising a diffraction grating located at a mask side of a projection system of a lithographic apparatus and an associated detector, the method comprising a first step of measuring first intensities of a combination of diffraction orders diffracted from the target grating while the mask sensor apparatus is moved relatively to the target grating along a first direction; a second step of displacing the mask sensor apparatus relative to the target grating in a second direction, wherein a size of the relative displacement is proportional to a spatial frequency of a potential error; and a third step of measuring second intensities of the combination of diffraction orders diffracted from the target grating while the mask sensor apparatus is moved relatively to the target grating along the first direction.

公开(公告)号：US20180046089A1

公开(公告)日：2018-02-15

申请号：US15790287

申请日：2017-10-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Bob STREEFKERK ,  Johannes Jacobus Matheus BASELMANS ,  Henrikus Herman Marie COX ,  Antonius Theodorus Anna Maria DERKSEN ,  Sjoerd Nicolaas Lambertus DONDERS ,  Christiaan Alexander HOOGENDAM ,  Joeri LOF ,  Erik Roelof LOOPSTRA ,  Jeroen Johannes Sophia Maria MERTENS ,  Frits VAN DER MEDLEN ,  Johannes Catharinus Hubertus MULKENS ,  Gerardus Petrus Matthijs VAN NUNEN ,  Klaus SIMON ,  Bernardus Antonius SLAGHEKKE ,  Alexander STRAAIJER ,  Jan-Gerard Cornelis VAN DER TOORN ,  Martijn HOUKES

IPC: G03F7/20

CPC classification number: G03F7/70341 ,  G03F7/70425 ,  G03F7/70525 ,  G03F7/709

Abstract: In a lithographic apparatus, a localized area of the substrate surface under a projection system is immersed in liquid. The height of a liquid supply system above the surface of the substrate can be varied using actuators. A control system uses feedforward or feedback control with input of the surface height of the substrate to maintain the liquid supply system at a predetermined height above the surface of the substrate.

公开(公告)号：US20170160647A1

公开(公告)日：2017-06-08

申请号：US15325406

申请日：2015-06-11

Applicant: ASML Netherlands B.V.

Inventor： Johannes Jacobus Matheus BASELMANS ,  Wilhelmus Petrus DE BOEIJ

IPC: G03F7/20

CPC classification number: G03F7/70516 ,  G03F1/42 ,  G03F7/70191 ,  G03F7/70775 ,  G03F9/7019 ,  G03F9/7049 ,  G03F9/7088

Abstract: A measurement method including using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

公开(公告)号：US20170131642A1

公开(公告)日：2017-05-11

申请号：US15316036

申请日：2015-05-13

Applicant: ASML Netherlands B.V.

Inventor： Johannes Jacobus Matheus BASELMANS ,  Hans BUTLER ,  Christiaan Alexander HOOGENDAM ,  Sander KERSSEMAKERS ,  Bart SMEETS ,  Robertus Nicodemus Jacobus VAN BALLEGOIJ ,  Hubertus Petrus Leonardus Henrica VAN BUSSEL

IPC: G03F7/20

CPC classification number: G03F7/70258 ,  G03F7/70066 ,  G03F7/70141 ,  G03F7/70641

Abstract: A method of modifying a lithographic apparatus comprising an illumination system for providing a radiation beam, a support structure for supporting a patterning device to impart the radiation beam with a pattern in its cross-section, a first lens for projecting the radiation beam at the patterning device with a first magnification, a substrate table for holding a substrate, and a first projection system for projecting the patterned radiation beam at a target portion of the substrate with a second magnification. The first lens and the first projection system together provide a third magnification. The method comprises reducing by a first factor the first magnification to provide a second lens for projecting the radiation beam with a fourth magnification; and increasing by the first factor the second magnification to provide a second projection system for projecting the patterned radiation beam at the target portion of the substrate with a fifth magnification.

公开(公告)号：US20220082943A1

公开(公告)日：2022-03-17

申请号：US17419360

申请日：2019-12-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Johannes Jacobus Matheus BASELMANS ,  Paulus Jacobus Maria VAN ADRICHEM ,  Egbert LENDERINK

IPC: G03F7/20

Abstract: A method for determining a component of optical characteristic of a patterning process. The method includes obtaining (i) a plurality of desired features, (ii) a plurality of simulated features based on the plurality of desired features and an optical characteristic of a patterning apparatus, and (iii) a performance metric (e.g., EPE) related to a desired feature of the plurality of desired features and an associated simulated feature of the plurality of simulated features; determining a set of optical sensitivities of the patterning process by computing a change in value of the performance metric based on a change in value of the optical characteristic; and identifying, based on the set of optical sensitivities, a set of components (e.g., principal components) of the optical characteristic that include dominant contributors in changing the value of the performance metric.

公开(公告)号：US20210132507A1

公开(公告)日：2021-05-06

申请号：US16629480

申请日：2018-06-12

Applicant: ASML Netherlands B.V.

Inventor： Paulus Hubertus Petrus KOLLER ,  Johannes Jacobus Matheus BASELMANS ,  Bartolomeus Petrus RIJPERS

IPC: G03F7/20

Abstract: Method of determining a photodetector contribution to a measurement of apodization of a projection system of an immersion lithography apparatus, the method comprising providing a beam of radiation, illuminating an object with the beam of radiation, using the projection system to project an image of the object through a liquid layer and onto a photodetector, performing a first set of measurements of radiation intensity across a pupil plane of the projection system at a first liquid layer thickness, performing a second set of measurements of radiation intensity across the pupil plane of the projection system at a different liquid layer thickness, determining a set of intensity differences from the first set of measurements and the second set of measurements, comparing the determined set of intensity differences to an expected set of intensity difference, and using the results of the comparison to determine the photodetector contribution to a measurement of apodization.

公开(公告)号：US20200004163A1

公开(公告)日：2020-01-02

申请号：US16558265

申请日：2019-09-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Carolus Johannes Catharina SCHOORMANS ,  Petrus Franciscus VAN GILS ,  Johannes Jacobus Matheus BASELMANS

IPC: G03F7/20 ,  G03F1/42 ,  G03F9/00

Abstract: A measurement method comprising using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

公开(公告)号：US20190137861A1

公开(公告)日：2019-05-09

申请号：US16300370

申请日：2017-05-30

Applicant: ASML Netherlands B.V.

Inventor： Pieter Cristiaan DE GROOT ,  Gerard Frans Jozef SCHASFOORT ,  Maksym Yuriiovych SLADKOV ,  Manfred Petrus Johannes Maria DIKKERS ,  Jozef Maria FINDERS ,  Pieter-Jan VAN ZWOL ,  Johannes Jacobus Matheus BASELMANS ,  Stefan Michael Bruno BAUMER ,  Laurentius Cornelius DE WINTER ,  Wouter Joep ENGELEN ,  Marcus Adrianus VAN DE KERKHOF ,  Robbert Jan VOOGD

IPC: G03F1/24 ,  G02B5/02 ,  G03F1/42 ,  G03F1/44 ,  G03F7/20 ,  G03F9/00

CPC classification number: G03F1/24 ,  G02B5/0278 ,  G02B5/0284 ,  G02B5/22 ,  G02B2005/1804 ,  G03F1/42 ,  G03F1/44 ,  G03F7/706 ,  G03F7/70683 ,  G03F9/7076

Abstract: A patterning device comprising a reflective marker, wherein the marker comprises: a plurality of reflective regions configured to preferentially reflect radiation having a given wavelength; and a plurality of absorbing regions configured to preferentially absorb radiation having the given wavelength; wherein the absorbing and reflective regions are arranged to form a patterned radiation beam reflected from the marker when illuminated with radiation, and wherein the reflective regions comprise a roughened reflective surface, the roughened reflective surface being configured to diffuse radiation reflected from the reflective regions, and wherein the roughened reflective surface has a root mean squared roughness of about an eighth of the given wavelength or more.