公开(公告)号：US20190006147A1

公开(公告)日：2019-01-03

申请号：US16064193

申请日：2016-12-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Bernardo KASTRUP ,  Johannes Catharinus Hubertus MULKENS ,  Marinus Aart VAN DEN BRINK ,  Jozef Petrus Henricus BENSCHOP ,  Erwin Paul SMAKMAN ,  Tamara DRUZHININA ,  Coen Adrianus VERSCHUREN

IPC: H01J37/26 ,  H01J37/28 ,  H01J37/15 ,  H01J37/244

Abstract: An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns. The actuator system may include a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

公开(公告)号：US20240403536A1

公开(公告)日：2024-12-05

申请号：US18805496

申请日：2024-08-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Marinus Aart VAN DEN BRINK ,  Yu CAO ,  Yi ZOU

IPC: G06F30/398 ,  G06F30/392 ,  G06F119/18

Abstract: A method for calibrating a process model and training an inverse process model of a patterning process. The training method includes obtaining a first patterning device pattern from simulation of an inverse lithographic process that predicts a patterning device pattern based on a wafer target layout, receiving wafer data corresponding to a wafer exposed using the first patterning device pattern, and training an inverse process model configured to predict a second patterning device pattern using the wafer data related to the exposed wafer and the first patterning device pattern.

公开(公告)号：US20210216697A1

公开(公告)日：2021-07-15

申请号：US15734141

申请日：2019-05-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Marinus Aart VAN DEN BRINK ,  Yu CAO ,  Yi ZOU

IPC: G06F30/398 ,  G06F30/392

Abstract: A method for calibrating a process model and training an inverse process model of a patterning process. The training method includes obtaining a first patterning device pattern from simulation of an inverse lithographic process that predicts a patterning device pattern based on a wafer target layout, receiving wafer data corresponding to a wafer exposed using the first patterning device pattern, and training an inverse process model configured to predict a second patterning device pattern using the wafer data related to the exposed wafer and the first patterning device pattern.

公开(公告)号：US20210375581A1

公开(公告)日：2021-12-02

申请号：US17403006

申请日：2021-08-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Bernardo KASTRUP ,  Johannes Catharinus Hubertus MULKENS ,  Marinus Aart VAN DEN BRINK ,  Jozef Petrus Henricus BENSCHOP ,  Erwin Paul SMAKMAN ,  Tamara DRUZHININA ,  Coen Adrianus VERSCHUREN

IPC: H01J37/26 ,  H01J37/15 ,  H01J37/02 ,  H01J37/22 ,  H01J37/244 ,  H01J37/28

Abstract: An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

公开(公告)号：US20180196361A1

公开(公告)日：2018-07-12

申请号：US15742168

申请日：2016-06-14

Applicant: ASML Netherlands B.V.

Inventor： Franciscus Johannes Joseph JANSSEN ,  Johannes Paul Marie DE LA ROSETTE ,  Edwin Cornelis KADIJK ,  Nicolas Alban LALLEMANT ,  Jan LIEFOOGHE ,  Markus Rolf Werner MATTHES ,  Marcel Johannus Elisabeth MUITJENS ,  Hubert Matthieu Richard STEIJNS ,  André Gillis VAN DE VELDE ,  Marinus Aart VAN DEN BRINK

IPC: G03F7/20 ,  H01S3/23 ,  H01S3/04 ,  H01S3/038 ,  H01S3/041 ,  H01S3/036 ,  H05G2/00 ,  F28C1/08

CPC classification number: G03F7/70891 ,  F28C1/08 ,  G03F7/70025 ,  G03F7/70033 ,  G03F7/708 ,  G03F7/70858 ,  H01S3/036 ,  H01S3/038 ,  H01S3/0407 ,  H01S3/041 ,  H01S3/2232 ,  H01S3/2308 ,  H05G2/008

Abstract: A lithographic apparatus comprising an illumination system configured to condition a radiation beam, a support structure constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, a substrate table constructed to hold a substrate, and a projection system configured to project the patterned radiation beam onto the substrate, the lithographic apparatus being provided with a first cooling fluid circuit which is configured to cool components to a first temperature, and provided with a second cooling fluid circuit which is configured to cool components to a second temperature that is lower than the first temperature.