公开(公告)号：US3554818A

公开(公告)日：1971-01-12

申请号：US3554818D

申请日：1968-04-25

Applicant: AVCO CORP

Inventor： LAMBERT VERNON L ,  GRI NORMAN J

IPC: G01J5/28 ,  H01L21/00 ,  H01L23/29 ,  H01L27/00 ,  H01L31/00 ,  H01L31/103 ,  H01L7/36 ,  H01L7/44

CPC classification number: H01L31/1035 ,  G01J5/28 ,  H01L21/00 ,  H01L23/291 ,  H01L24/05 ,  H01L27/00 ,  H01L31/00 ,  H01L2224/05552 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2924/14 ,  Y10S148/005 ,  Y10S148/02 ,  Y10S148/022 ,  Y10S148/051 ,  Y10S148/065 ,  Y10S148/08 ,  Y10S148/118 ,  Y10S148/12 ,  H01L2924/00

Abstract: THE INVENTION HERE DISCLOSED IS AN INDIUM ANTIMONIDE INFRARED DETECTOR AND A PROCESS FOR MAKING THE SAME. A DIFFUSION PROCESS YIELDS A VERY SHALLOW P-REGION ON AN N-TYPE INDIUM ANTIMONIDE SUBSTRATE. THIS LAYER HAS A THICKNESS OF 1.0 TO .5 MICRON AND HAS A HIGH CONCENTRATION OF ACCEPTORS, PROVIDING A VERY EFFICIENT COLLECTION REGION OF CARRIER CREATED BY PHOTON ABSORPTION. THE LAYER IS OF CADMIUM OR ZINC AND THE CONCENTRATION IS WITHIN A RANGE SUCH THAT WHILE LATTICE DAMAGE OCCURS DETECTOR OPERATION IS NOT IMPAIRED. THE LAYER IS SO SHALLOW THE MOST OF THE CARRIER CREATED BY PHOTON ABSORPTION ARE COLLECTED.

公开(公告)号：US3483096A

公开(公告)日：1969-12-09

申请号：US3483096D

申请日：1968-04-25

Applicant: AVCO CORP

Inventor： GRI NORMAN J ,  YON EUGENE T

IPC: H01L21/316 ,  H01L23/29 ,  H01L23/485 ,  H01L27/146 ,  H01L31/00 ,  H01L31/0224 ,  H01L31/103 ,  C23F17/00 ,  C23B5/06 ,  C23B5/50

CPC classification number: H01L31/1035 ,  H01L21/31654 ,  H01L23/291 ,  H01L23/485 ,  H01L24/45 ,  H01L24/49 ,  H01L27/14649 ,  H01L31/00 ,  H01L31/022408 ,  H01L2224/45144 ,  H01L2224/49107 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/12036 ,  H01L2924/14 ,  H01L2924/3011 ,  Y10S148/005 ,  Y10S148/02 ,  Y10S148/065 ,  Y10S148/08 ,  Y10S148/118 ,  H01L2224/48 ,  H01L2224/05599 ,  H01L2924/00