公开(公告)号：US11784261B2

公开(公告)日：2023-10-10

申请号：US17667105

申请日：2022-02-08

Applicant: 3-5 Power Electronics GmbH ,  AZUR SPACE Solar Power GmbH

Inventor： Volker Dudek ,  Jens Kowalsky ,  Riteshkumar Bhojani ,  Daniel Fuhrmann ,  Thorsten Wierzkowski

IPC: H01L29/868 ,  H01L29/207

CPC classification number: H01L29/868 ,  H01L29/207

Abstract: A stacked III-V semiconductor diode comprising or consisting of GaAs, with a heavily n-doped cathode layer, a heavily p-doped anode layer, and a drift region arranged between the cathode layer and the anode layer with a dopant concentration of at most 8·1015 cm−3, and a layer thickness of at least 10 μm, wherein the cathode layer has a delta layer section with a layer thickness of 0.1 μm to 2 μm and a dopant concentration of at least 1·1019 cm−3.

公开(公告)号：US11296248B2

公开(公告)日：2022-04-05

申请号：US14937424

申请日：2015-11-10

Applicant: AZUR SPACE Solar Power GmbH

Inventor： Daniel Fuhrmann ,  Wolfgang Guter

IPC: H01L31/0687 ,  H01L31/0304 ,  H01L31/0693 ,  H01L31/056

Abstract: A solar cell stack, having a first semiconductor solar cell having a p-n junction made of a first material with a first lattice constant, and a second semiconductor solar cell having a p-n junction made of a second material with a second lattice constant, and the first lattice constant being at least 0.008 Å smaller than the second lattice constant, and a metamorphic buffer, the metamorphic buffer being formed between the first semiconductor solar cell and the second semiconductor solar cell, and the metamorphic buffer including a series of three layers, and the lattice constant increasing in a series in the direction of the semiconductor solar cell, and the lattice constants of the layers of the metamorphic buffer being bigger than the first lattice constant, two layers of the buffer having a doping, and the difference in the dopant concentration between the two layers being greater than 4E17 cm−3.

公开(公告)号：US10050169B2

公开(公告)日：2018-08-14

申请号：US15131121

申请日：2016-04-18

Applicant: AZUR SPACE Solar Power GmbH

Inventor： Wolfgang Guter ,  Daniel Fuhrmann ,  Clemens Waechter

IPC: H01L25/16 ,  H01L31/167 ,  H01L33/20 ,  H01L33/60 ,  H01S5/18 ,  H03K17/78 ,  H01L31/0304 ,  H01L27/08 ,  H01L29/88 ,  H01L31/0352 ,  H01L33/30 ,  H01S5/022 ,  H01S5/30

Abstract: A stacked optocoupler component, having a transmitter component with a transmitting area and a receiver component with a receiving area and a plate-shaped electrical isolator. The isolator is formed between the transmitter component and the receiver component, and the transmitter component and the receiver component and the isolator are arranged one on top of another in the form of a stack. The transmitter component and the receiver component are galvanically separated from one another but optically coupled to one another. The isolator is transparent for the emission wavelengths of the transmitter component and the centroidal axis of the transmitting area and the centroidal axis of the receiving area are substantially or precisely parallel to one another.

公开(公告)号：US11557665B2

公开(公告)日：2023-01-17

申请号：US17368279

申请日：2021-07-06

Applicant: AZUR SPACE Solar Power GmbH

Inventor： Gregor Keller ,  Clemens Waechter ,  Daniel Fuhrmann

IPC: H01L29/737 ,  H01L29/08 ,  H01L29/10 ,  H01L29/205

Abstract: A vertical high-blocking III-V bipolar transistor, which includes an emitter, a base and a collector. The emitter has a highly doped emitter semiconductor contact region of a first conductivity type and a first lattice constant. The base has a low-doped base semiconductor region of a second conductivity type and the first lattice constant. The collector has a layered low-doped collector semiconductor region of the first conductivity type with a layer thickness greater than 10 μm and the first lattice constant. The collector has a layered highly doped collector semiconductor contact region of the first conductivity type. A first metallic connecting contact layer is formed in regions being integrally connected to the emitter. A second metallic connecting contact layer is formed in regions being integrally connected to the base. A third metallic connecting contact region is formed at least in regions being arranged beneath the collector.

公开(公告)号：US11257909B2

公开(公告)日：2022-02-22

申请号：US16863483

申请日：2020-04-30

Applicant: AZUR SPACE Solar Power GmbH ,  3-5 Power Electronics GmbH

Inventor： Daniel Fuhrmann ,  Gregor Keller ,  Clemens Waechter ,  Volker Dudek

IPC: H01L29/15 ,  H01L29/06 ,  H01L29/10 ,  H01L29/201 ,  H01L29/861

Abstract: A stacked, high-blocking III-V semiconductor power diode having a first metallic terminal contact layer, formed at least in regions, and a highly doped semiconductor contact region of a first conductivity type and a first lattice constant. A drift layer of a second conductivity type and having a first lattice constant is furthermore provided. A semiconductor contact layer of a second conductivity, which includes an upper side and an underside, and a second metallic terminal contact layer are formed, and the second metallic terminal contact layer being integrally connected to the underside of the semiconductor contact layer, and the semiconductor contact layer having a second lattice constant at least on the underside, and the second lattice constant being the lattice constant of InP, and the drift layer and the highly doped semiconductor contact region each comprising an InGaAs compound or being made up of InGaAs.

公开(公告)号：US11245012B2

公开(公告)日：2022-02-08

申请号：US16863585

申请日：2020-04-30

Applicant: AZUR SPACE Solar Power GmbH

Inventor： Daniel Fuhrmann ,  Gregor Keller ,  Clemens Waechter

IPC: H01L29/15 ,  H01L29/06 ,  H01L29/205 ,  H01L29/861

Abstract: A stacked high barrier III-V power semiconductor diode having an at least regionally formed first metallic terminal contact layer and a heavily doped semiconductor contact region of a first conductivity type with a first lattice constant, a drift layer of a second conductivity type, a heavily doped metamorphic buffer layer sequence of the second conductivity type is formed. The metamorphic buffer layer sequence has an upper side with the first lattice constant and a lower side with a second lattice constant. The first lattice constant is greater than the second lattice constant. The upper side of the metamorphic buffer layer sequence is arranged in the direction of the drift layer. A second metallic terminal contact layer is arranged below the lower side of the metamorphic buffer layer sequence. The second metallic terminal contact layer is integrally bonded with a semiconductor contact layer.

公开(公告)号：US10388819B2

公开(公告)日：2019-08-20

申请号：US15998506

申请日：2018-08-16

Applicant: AZUR SPACE Solar Power GmbH

Inventor： Daniel Fuhrmann ,  Thomas Lauermann ,  Gregor Keller

IPC: H01L31/062 ,  H01L31/167 ,  H01L27/06 ,  H01L27/144 ,  H01L31/0304

Abstract: A receiver unit having an optically operated voltage source, the voltage source including a first stack having an upper side and an underside and being formed on an upper side of a non-Si substrate based on III-V semiconductor layers arranged in the shape of a stack, and having a second electrical terminal contact on the upper side of the first stack and a first electrical terminal contact on an underside of the non-Si substrate, a voltage generated with the aid of the incidence of light onto the upper side of the first stack being present between the two terminal contacts, and including a second stack having a MOS transistor structure having III-V semiconductor layers and including a control terminal and a drain terminal and a source terminal. The MOS transistor structure being designed as a depletion field effect transistor.

公开(公告)号：US11859310B2

公开(公告)日：2024-01-02

申请号：US17129737

申请日：2020-12-21

Applicant: AZUR SPACE SOLAR POWER GMBH

Inventor： Clemens Waechter ,  Gregor Keller ,  Daniel Fuhrmann

IPC: C30B29/40 ,  C30B25/14 ,  C30B25/06 ,  C30B25/18 ,  H01L21/02 ,  C30B25/16

CPC classification number: C30B29/40 ,  C30B25/14 ,  C30B25/165 ,  C30B25/18 ,  H01L21/0251 ,  H01L21/0257 ,  H01L21/0262 ,  H01L21/02463 ,  H01L21/02538 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579

Abstract: A vapor phase epitaxy method of growing a III-V layer with a doping that changes from a first conductivity type to a second conductivity type on a surface of a substrate or a preceding layer in a reaction chamber from the vapor phase from an epitaxial gas flow comprising a carrier gas, at least one first precursor for an element from main group III, and at least one second precursor for an element from main group V, wherein when a first growth height is reached, a first initial doping level of the first conductivity type is set by means of a ratio of a first mass flow of the first precursor to a second mass flow of the second precursor in the epitaxial gas flow, the first initial doping level is then reduced to a second initial doping level of the first or low second conductivity type.

公开(公告)号：US11699722B2

公开(公告)日：2023-07-11

申请号：US17579122

申请日：2022-01-19

Applicant: AZUR SPACE Solar Power GmbH ,  3-5 Power Electronics GmbH

Inventor： Daniel Fuhrmann ,  Gregor Keller ,  Clemens Waechter ,  Volker Dudek

IPC: H01L29/15 ,  H01L29/06 ,  H01L29/10 ,  H01L29/201 ,  H01L29/861

CPC classification number: H01L29/157 ,  H01L29/0619 ,  H01L29/1095 ,  H01L29/201 ,  H01L29/861

Abstract: A stacked, high-blocking III-V semiconductor power diode having a first metallic terminal contact layer, formed at least in regions, and a highly doped semiconductor contact region of a first conductivity type and a first lattice constant. A drift layer of a second conductivity type and having a first lattice constant is furthermore provided. A semiconductor contact layer of a second conductivity, which includes an upper side and an underside, and a second metallic terminal contact layer are formed, and the second metallic terminal contact layer being integrally connected to the underside of the semiconductor contact layer, and the semiconductor contact layer having a second lattice constant at least on the underside, and the second lattice constant being the lattice constant of InP, and the drift layer and the highly doped semiconductor contact region each comprising an InGaAs compound or being made up of InGaAs.

公开(公告)号：US20190058074A1

公开(公告)日：2019-02-21

申请号：US15998506

申请日：2018-08-16

Applicant: AZUR SPACE Solar Power GmbH

Inventor： Daniel Fuhrmann ,  Thomas Lauermann ,  Gregor Keller

IPC: H01L31/167 ,  H01L27/144 ,  H01L31/0304 ,  H01L27/06

CPC classification number: H01L31/167 ,  H01L27/0629 ,  H01L27/1443 ,  H01L31/0304

Abstract: A receiver unit having an optically operated voltage source, the voltage source including a first stack having an upper side and an underside and being formed on an upper side of a non-Si substrate based on III-V semiconductor layers arranged in the shape of a stack, and having a second electrical terminal contact on the upper side of the first stack and a first electrical terminal contact on an underside of the non-Si substrate, a voltage generated with the aid of the incidence of light onto the upper side of the first stack being present between the two terminal contacts, and including a second stack having a MOS transistor structure having III-V semiconductor layers and including a control terminal and a drain terminal and a source terminal. The MOS transistor structure being designed as a depletion field effect transistor.