公开(公告)号：US20180358276A1

公开(公告)日：2018-12-13

申请号：US16107887

申请日：2018-08-21

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Chi-Tsung CHIU ,  Meng-Jen WANG ,  Cheng-Hsi CHUANG ,  Hui-Ying HSIEH ,  Hui Hua LEE

IPC分类号： H01L23/31 ,  H01L23/00 ,  H01L21/78 ,  H01L21/786 ,  H01L23/13 ,  H01L23/14 ,  H01L23/29 ,  H01L23/492 ,  H01L23/495 ,  H01L23/498 ,  H01L23/538 ,  H01L21/56 ,  H01L25/07

CPC分类号： H01L23/3121 ,  H01L21/561 ,  H01L21/78 ,  H01L21/786 ,  H01L23/13 ,  H01L23/14 ,  H01L23/142 ,  H01L23/29 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/315 ,  H01L23/492 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49575 ,  H01L23/49582 ,  H01L23/49586 ,  H01L23/49861 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/19 ,  H01L24/24 ,  H01L24/25 ,  H01L24/97 ,  H01L25/074 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/24247 ,  H01L2224/2518 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/73267 ,  H01L2224/8385 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/15153 ,  H01L2224/83

摘要： A semiconductor device package includes: (1) a conductive base comprising a sidewall, a cavity defined from a first surface of the conductive base, the cavity having a bottom surface and a depth; (2) a semiconductor die disposed on the bottom surface of the cavity, the semiconductor die having a first surface and a second surface opposite the first surface, the second surface of the semiconductor die bonded to the bottom surface of the cavity; and (3) a first insulating material covering the sidewall of the conductive base and extending to a bottom surface of the conductive base.

公开(公告)号：US20170148746A1

公开(公告)日：2017-05-25

申请号：US15250713

申请日：2016-08-29

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Chi-Tsung CHIU ,  Meng-Jen WANG ,  Cheng-Hsi CHUANG ,  Hui-Ying HSIEH ,  Hui Hua LEE

IPC分类号： H01L23/00 ,  H01L21/78 ,  H01L21/48 ,  H01L21/56 ,  H01L23/495 ,  H01L23/31

CPC分类号： H01L23/3121 ,  H01L21/561 ,  H01L21/78 ,  H01L21/786 ,  H01L23/13 ,  H01L23/14 ,  H01L23/142 ,  H01L23/29 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/315 ,  H01L23/492 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49575 ,  H01L23/49582 ,  H01L23/49586 ,  H01L23/49861 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/19 ,  H01L24/24 ,  H01L24/25 ,  H01L24/97 ,  H01L25/074 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/24247 ,  H01L2224/2518 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/73267 ,  H01L2224/8385 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/15153 ,  H01L2224/83

摘要： A semiconductor device package includes a conductive base, and a cavity defined from a first surface of the conductive base, the cavity having a bottom surface and a depth. A semiconductor die is disposed on the bottom surface of the cavity, the semiconductor die having a first surface and a second surface opposite the first surface. The second surface of the semiconductor die is bonded to the bottom surface of the cavity. A distance between the first surface of the semiconductor die and the first surface of the conductive base is about 20% of the depth of the cavity.