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公开(公告)号:US20170256508A1
公开(公告)日:2017-09-07
申请号:US15057673
申请日:2016-03-01
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Chun-Jun ZHUANG , Hung-Chun KUO , Chun-Chin HUANG
IPC: H01L23/00
CPC classification number: H01L24/06 , H01L23/5386 , H01L24/03 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/17 , H01L24/81 , H01L2224/02375 , H01L2224/02381 , H01L2224/03472 , H01L2224/06051 , H01L2224/06152 , H01L2224/11462 , H01L2224/1147 , H01L2224/11901 , H01L2224/13012 , H01L2224/13014 , H01L2224/14051 , H01L2224/14131 , H01L2224/14134 , H01L2224/14136 , H01L2224/14151 , H01L2224/14156 , H01L2224/17106 , H01L2224/81191 , H01L2224/81192 , H01L2224/81193 , H01L2224/81385 , H01L2224/81447 , H01L2924/15321 , H01L2924/381 , H01L2924/00014 , H01L2924/00012
Abstract: A semiconductor device includes a substrate main body, a plurality of first bump pads, and redistribution layer (RDL). The first bump pads are disposed adjacent to a surface of the substrate main body, each of the first bump pads has a first profile from a top view, the first profile has a first width along a first direction and a second width along a second direction perpendicular to the first direction, and the first width of the first profile is greater than the second width of the first profile. The RDL is disposed adjacent to the surface of the substrate main body, and the RDL includes a first portion disposed between two first bump pads.
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公开(公告)号:US20180122761A1
公开(公告)日:2018-05-03
申请号:US15340803
申请日:2016-11-01
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Chun-Chin HUANG , Yung I. YEH , Che-Ming HSU
IPC: H01L23/00
CPC classification number: H01L24/13 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/14 , H01L24/16 , H01L2224/0362 , H01L2224/0401 , H01L2224/11 , H01L2224/11462 , H01L2224/13014 , H01L2224/13016 , H01L2224/13026 , H01L2224/1308 , H01L2224/13083 , H01L2224/13147 , H01L2224/13155 , H01L2224/14051 , H01L2224/16221 , H01L2224/16238 , H01L2924/014 , H01L2924/3511
Abstract: A semiconductor device package ready for assembly includes: a semiconductor substrate; a first under-bump-metallurgy (UBM) layer disposed on the semiconductor substrate; a first conductive pillar disposed on the first UBM layer; and a second conductive pillar disposed on the first conductive pillar. A material of the first conductive pillar is different from a material of the second conductive pillar, and the material of the second conductive pillar includes an antioxidant.
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