-
公开(公告)号：US20210083628A1
公开(公告)日：2021-03-18
申请号：US16575133
申请日：2019-09-18
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor： Jaw-Ming DING
Abstract: A power amplifier circuit includes a current generator and a current mirror driver. The current generator has a first input connected to a first voltage supply and an output configured to generate a first current. The current generator includes a first transistor, a second transistor, a first resistor and a second resistor. The first transistor has an emitter connected to ground. The second transistor has a base connected to a base of the first transistor and an emitter connected to ground. The first resistor is connected between the first voltage supply and a collector of the first transistor. The second resistor is connected between the first voltage supply and a collector of the second transistor. The current mirror drive has a first input connected to the output of the current generator to receive the first current and an output configured to generate a second current.
-
公开(公告)号：US20200007086A1
公开(公告)日：2020-01-02
申请号：US16024059
申请日：2018-06-29
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor： Jaw-Ming DING
Abstract: The present disclosure relates to a power amplifier circuit. The power amplifier circuit includes a voltage-controlled current source and a current mirror. The voltage-controlled current source is configured to receive a first voltage and to generate a first current. The current mirror is connected to the voltage-controlled current source and to generate a second current in response to the first current. The second current continuously changes from 0 mA to about 120 mA as the first voltage continuously changes from 0 V to about 1 V.
-
Patent Agency Ranking
公开(公告)号：US20210257286A1
公开(公告)日：2021-08-19
申请号：US16793989
申请日：2020-02-18
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor： Jaw-Ming DING , Ren-Hung CHOU , Yi-Hung LIN
IPC: H01L23/498 , H01L23/00 , H01L23/31 , H01L23/552
Abstract: A semiconductor package structure includes a substrate. The substrate includes a first ground layer. The first ground layer has a body and a first tooth protruding from a side of the body. The first tooth has a first lateral side. The first lateral side of the first tooth is inclined relative to the side of the body in a top view of the first ground layer.
-
公开(公告)号：US20190245488A1
公开(公告)日：2019-08-08
申请号：US15887635
申请日：2018-02-02
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor： Jaw-Ming DING
CPC classification number: H03F1/0205 , H03F3/19 , H03F3/21 , H03F2200/451 , H04B1/04
Abstract: The present disclosure relates to a power amplifier circuit including a current source, a power control circuit, a current mirror and an output circuit. The current source circuit includes a first transistor and a second transistor. A source of the first transistor is connected to a drain of the second transistor and a gate of the first transistor is connected to a source with the second transistor. The power control circuit is connected to a gate of the second transistor. The current mirror circuit is connected to the gate of the first transistor and a source of the second transistor. The output circuit is connected to the current mirror circuit.
-
公开(公告)号：US20200313626A1
公开(公告)日：2020-10-01
申请号：US16365370
申请日：2019-03-26
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor： Jaw-Ming DING
Abstract: A power amplifier circuit includes a first transistor, a second transistor and a bias circuit. The first transistor has a base configured to receive a first signal. The second transistor has an emitter connecting to a collector of the first transistor and a collector configured to output a second signal. The bias circuit is coupled to the first transistor and the second transistor. The bias circuit is configured to provide a direct current (DC) voltage at the collector of the second transistor about twice a DC voltage at the collector of the first transistor. The bias circuit is configured to provide an alternating current (AC) or radio frequency (RF) voltage at the collector of the second transistor about twice an AC or RF voltage at the collector of the first transistor.
-
公开(公告)号：US20190245487A1
公开(公告)日：2019-08-08
申请号：US15887609
申请日：2018-02-02
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor： Jaw-Ming DING
Abstract: The present disclosure relates to a logic control circuit including a first inverter and a voltage limiter. The first inverter is connected to a first input voltage. The first inverter includes a first transistor having a first terminal and a second terminal. The second terminal of the first transistor is connected to a ground. The voltage limiter includes a second transistor. The second transistor has a gate connected to a ground, a source connected to the first terminal of the first transistor and a drain connected to a second input voltage.
-
公开(公告)号：US20180114757A1
公开(公告)日：2018-04-26
申请号：US15333008
申请日：2016-10-24
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor： Wei-Hsuan LEE , Jaw-Ming DING , Wei-Yu CHEN
IPC: H01L23/552 , H01L23/498 , H01L23/31 , H01L23/00 , H01L21/48 , H01L21/56
CPC classification number: H01L23/552 , H01L21/485 , H01L21/4853 , H01L21/565 , H01L23/3114 , H01L23/49838 , H01L24/16 , H01L24/48 , H01L2224/16155 , H01L2224/48225 , H01L2924/1205 , H01L2924/1206 , H01L2924/1207 , H01L2924/3025
Abstract: A semiconductor package device includes a substrate, a passive component, an active component and a package body. The passive component is disposed on the substrate. The active component is disposed on the substrate. The package body is disposed on the substrate. The package body includes a first portion covering the active component and the passive component, and a second portion covering the passive component. A top surface of the second portion of the package body is higher than a top surface of the first portion of the package body.
-
-
-
-
-
-
Search Results
7
records
(took 0.013 seconds)
