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公开(公告)号:US09960137B1
公开(公告)日:2018-05-01
申请号:US15340803
申请日:2016-11-01
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Chun-Chin Huang , Yung I. Yeh , Che-Ming Hsu
CPC classification number: H01L24/13 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/14 , H01L24/16 , H01L2224/0362 , H01L2224/0401 , H01L2224/11 , H01L2224/11462 , H01L2224/13014 , H01L2224/13016 , H01L2224/13026 , H01L2224/1308 , H01L2224/13083 , H01L2224/13147 , H01L2224/13155 , H01L2224/14051 , H01L2224/16221 , H01L2224/16238 , H01L2924/014 , H01L2924/3511
Abstract: A semiconductor device package ready for assembly includes: a semiconductor substrate; a first under-bump-metallurgy (UBM) layer disposed on the semiconductor substrate; a first conductive pillar disposed on the first UBM layer; and a second conductive pillar disposed on the first conductive pillar. A material of the first conductive pillar is different from a material of the second conductive pillar, and the material of the second conductive pillar includes an antioxidant.
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公开(公告)号:US11224132B2
公开(公告)日:2022-01-11
申请号:US16563713
申请日:2019-09-06
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Ming-Hung Chen , Yung I. Yeh , Chang-Lin Yeh , Sheng-Yu Chen
Abstract: A semiconductor device package includes a display device, an encapsulation layer disposed in direct contact with the display device, and a reinforced structure surrounded by the encapsulation layer. The reinforced structure is spaced apart from a surface of the display device. A method of manufacturing a semiconductor device package is also disclosed.
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公开(公告)号:US11139252B2
公开(公告)日:2021-10-05
申请号:US16802479
申请日:2020-02-26
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Hsu-Nan Fang , Chun-Jun Zhuang , Yung I. Yeh
IPC: H01L23/552 , H01L23/31 , H01L23/00 , H01L21/56
Abstract: A semiconductor package includes a semiconductor die, a plurality of conductive bumps, a shielding layer, an encapsulant and a redistribution layer. The semiconductor die has an active surface, a backside surface and a lateral surface. The conductive bumps are disposed on the active surface of the semiconductor die. The shielding layer is disposed on the lateral surface of the semiconductor die. The encapsulant covers the shielding layer, and has a first surface and a second surface opposite to the first surface. The redistribution layer is disposed on the first surface of the encapsulant and electrically connected to the semiconductor die through the conductive bumps. The shielding layer is electrically connected to the redistribution layer.
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公开(公告)号:US20190109117A1
公开(公告)日:2019-04-11
申请号:US16152270
申请日:2018-10-04
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Hsu-Nan Fang , Chun-Jun Zhuang , Yung I. Yeh , Ming-Chiang Lee
IPC: H01L25/065 , H01L23/31 , H01L23/538 , H01L23/00 , H01L21/48 , H01L21/56
Abstract: A semiconductor device package includes a first redistribution layer (RDL), a first die, a second die, a second RDL and an encapsulant. The first die is disposed on the first RDL and is electrically connected to the first RDL. The first die has a first electrical contact. The second die is disposed on the first RDL and is electrically connected to the first RDL. The second die has a first electrical contact. The second RDL is surrounded by the first RDL. The second RDL has a first electrical contact electrically connected to the first electrical contact of the first die and a second electrical contact electrically connected to the first electrical contact of the second die. A size of the first electrical contact of the second RDL is greater than a size of the second electrical contact of the second RDL.
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公开(公告)号:US11437415B2
公开(公告)日:2022-09-06
申请号:US16557990
申请日:2019-08-30
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Ming-Hung Chen , Yung I. Yeh , Chang-Lin Yeh , Sheng-Yu Chen
IPC: H01L33/24 , H01L27/12 , H01L33/62 , H01L25/075 , H01L33/54
Abstract: A semiconductor device package includes a main substrate, at least one thin film transistor (TFT) module, at least one first electronic component, at least one encapsulant and a plurality of light emitting devices. The main substrate has a first surface and a second surface opposite to the first surface. The thin film transistor (TFT) module is disposed adjacent to and electrically connected to the first surface of the main substrate. The first electronic component is disposed adjacent to and electrically connected to the first surface of the main substrate. The encapsulant covers the at least one thin film transistor (TFT) module and the at least one first electronic component. The light emitting devices are electrically connected to the at least one thin film transistor (TFT) module.
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公开(公告)号:US10797022B2
公开(公告)日:2020-10-06
申请号:US16152270
申请日:2018-10-04
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Hsu-Nan Fang , Chun-Jun Zhuang , Yung I. Yeh , Ming-Chiang Lee
IPC: H01L25/065 , H01L23/31 , H01L23/538 , H01L23/00 , H01L21/56 , H01L21/683 , H01L23/367 , H01L21/48 , H01L23/498
Abstract: A semiconductor device package includes a first redistribution layer (RDL), a first die, a second die, a second RDL and an encapsulant. The first die is disposed on the first RDL and is electrically connected to the first RDL. The first die has a first electrical contact. The second die is disposed on the first RDL and is electrically connected to the first RDL. The second die has a first electrical contact. The second RDL is surrounded by the first RDL. The second RDL has a first electrical contact electrically connected to the first electrical contact of the first die and a second electrical contact electrically connected to the first electrical contact of the second die. A size of the first electrical contact of the second RDL is greater than a size of the second electrical contact of the second RDL.
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公开(公告)号:US10593630B2
公开(公告)日:2020-03-17
申请号:US15978070
申请日:2018-05-11
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Hsu-Nan Fang , Chun-Jun Zhuang , Yung I. Yeh
IPC: H01L21/66 , H01L23/552 , H01L23/31 , H01L23/00 , H01L21/56
Abstract: A semiconductor package includes a semiconductor die, a plurality of conductive bumps, a shielding layer, an encapsulant and a redistribution layer. The semiconductor die has an active surface, a backside surface and a lateral surface. The conductive bumps are disposed on the active surface of the semiconductor die. The shielding layer is disposed on the lateral surface of the semiconductor die. The encapsulant covers the shielding layer, and has a first surface and a second surface opposite to the first surface. The redistribution layer is disposed on the first surface of the encapsulant and electrically connected to the semiconductor die through the conductive bumps. The shielding layer is electrically connected to the redistribution layer.
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