公开(公告)号：US10249593B2

公开(公告)日：2019-04-02

申请号：US15310684

申请日：2015-06-22

Applicant: Agency for Science, Technology and Research

Inventor： Sunil Wickramanayaka ,  Ling Xie ,  Jerry Jie Li Aw

IPC: H01L23/00 ,  H01L25/00 ,  H01L25/065

Abstract: A method for chip on wafer bonding is provided. The method includes the formation of a plurality of posts on at least one of a chip and a wafer, and a like plurality of contacts on the other of the chip and the wafer. After formation, a contact surface of each post is planarized, the respective planarized contact surface having a surface roughness height. A bonding material is then applied to at least one of the chip in a thickness no greater than the surface roughness height of the contact surface. The posts are then temporarily bonded to the contacts using the bonding material to stabilize a position of the chip relative to the wafer for permanent diffusion bonding of the chip to the wafer.

公开(公告)号：US20170084570A1

公开(公告)日：2017-03-23

申请号：US15310684

申请日：2015-06-22

Applicant: Agency for Science, Technology and Research

Inventor： Sunil Wickramanayaka ,  Ling Xie ,  Jerry Jie Li Aw

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L24/81 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03622 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11825 ,  H01L2224/1184 ,  H01L2224/11845 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13026 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13611 ,  H01L2224/16225 ,  H01L2224/81022 ,  H01L2224/8109 ,  H01L2224/81097 ,  H01L2224/81099 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8181 ,  H01L2224/8182 ,  H01L2224/8183 ,  H01L2224/81986 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/014 ,  H01L2224/81 ,  H01L2224/9205

Abstract: A method for chip on wafer bonding is provided. The method includes the formation of a plurality of posts on at least one of a chip and a wafer, and a like plurality of contacts on the other of the chip and the wafer. After formation, a contact surface of each post is planarized, the respective planarized contact surface having a surface roughness height. A bonding material is then applied to at least one of the chip in a thickness no greater than the surface roughness height of the contact surface. The posts are then temporarily bonded to the contacts using the bonding material to stabilize a position of the chip relative to the wafer for permanent diffusion bonding of the chip to the wafer.