利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

56 条记录 (耗时 0.029 秒)

    DYNAMIC VOLTAGE SCALING FOR SELF-TIMED OR RACING PATHS
    7.
    发明申请
    DYNAMIC VOLTAGE SCALING FOR SELF-TIMED OR RACING PATHS 有权
    自动或赛车运动的动态电压调节

    公开(公告)号：US20090108899A1

    公开(公告)日：2009-04-30

    申请号：US11932311

    申请日：2007-10-31

    申请人： Ajay Bhatia ,  Rajesh Khanna

    发明人： Ajay Bhatia ,  Rajesh Khanna

    IPC分类号： H03H11/26 ,  G06F17/50

    CPC分类号： H03H11/265 ,  G11C7/04 ,  G11C7/08 ,  G11C7/22 ,  G11C11/4076 ,  H03K19/00384 ,  H03K19/018521 ,  H03K2005/00019

    摘要： A timing-constrained circuit (e.g., a self-timed circuit) of optimal performance is achieved by allowing the delay of the circuit to be changed dynamically as a function of operating conditions (e.g., operating voltages or temperatures). The delay of timing signals in the timing-constrained circuit for a given operating condition may be selected to have the minimum margin for that operating condition among the available delays to maximize performance over the entire dynamic range of operating conditions.

    摘要翻译： 通过允许根据操作条件（例如，工作电压或温度）动态地改变电路的延迟来实现具有最佳性能的定时受限电路（例如，自定时电路）。 可以选择给定操作条件的定时约束电路中的定时信号的延迟，以便在可用延迟之间具有该操作条件的最小余量，以在整个操作条件的动态范围内最大化性能。

    COMPOUNDS AND METHODS FOR TREATMENT AND DIAGNOSIS OF CHLAMYDIAL INFECTION
    9.
    发明申请
    COMPOUNDS AND METHODS FOR TREATMENT AND DIAGNOSIS OF CHLAMYDIAL INFECTION 有权
    用于治疗和诊断CHLAMYDIAL感染的化合物和方法

    公开(公告)号：US20080299142A1

    公开(公告)日：2008-12-04

    申请号：US11929665

    申请日：2007-10-30

    申请人： Ajay Bhatia ,  Yasir A.W. Skeiky ,  Peter Probst

    发明人： Ajay Bhatia ,  Yasir A.W. Skeiky ,  Peter Probst

    IPC分类号： A61K39/00 ,  A61P31/00

    CPC分类号： C07K14/295 ,  A61K38/00 ,  A61K39/00 ,  A61K48/00 ,  A61K2039/505 ,  A61K2039/51 ,  A61K2039/515 ,  A61K2039/5154 ,  A61K2039/53 ,  C07K2319/00

    摘要： Compounds and methods for the diagnosis and treatment of Chlamydial infection are disclosed. The compounds provided include polypeptides that contain at least one antigenic portion of a Chlamydia antigen and DNA sequences encoding such polypeptides. Pharmaceutical compositions and vaccines comprising such polypeptides or DNA sequences are also provided, together with antibodies directed against such polypeptides. Diagnostic kits containing such polypeptides or DNA sequences and a suitable detection reagent may be used for the detection of Chlamydial infection in patients and in biological samples.

    摘要翻译： 公开了用于诊断和治疗衣原体感染的化合物和方法。 提供的化合物包括含有衣原体抗原的至少一个抗原部分的多肽和编码这些多肽的DNA序列。 还提供了包含此类多肽或DNA序列的药物组合物和疫苗以及针对这些多肽的抗体。 含有此类多肽或DNA序列的诊断试剂盒和合适的检测试剂可用于检测患者和生物样品中的衣原体感染。

    MEMORY DEVICE WITH SPLIT POWER SWITCH
    10.
    发明申请
    MEMORY DEVICE WITH SPLIT POWER SWITCH 有权
    具有分离电源开关的存储器件

    公开(公告)号：US20080273412A1

    公开(公告)日：2008-11-06

    申请号：US11932555

    申请日：2007-10-31

    申请人： Yolin Lih ,  Dennis Wendell ,  Jun Liu ,  Daniel Fung ,  Ajay Bhatia ,  Shyam Balasubramanian

    发明人： Yolin Lih ,  Dennis Wendell ,  Jun Liu ,  Daniel Fung ,  Ajay Bhatia ,  Shyam Balasubramanian

    IPC分类号： G11C5/14

    CPC分类号： G11C11/419 ,  G11C5/147 ,  G11C11/417

    摘要： A memory device having a split power switch is provided to improve the writeability of static random access memory (SRAM) cells without adversely compromising their stability. For example, various split power switch circuits are used to permit the voltage or current of a power supply line connected with one side of an SRAM cell to drop during write operations. This drop weakens one side of the SRAM cell and reduces the drive-fight between transistors of the SRAM cell and external write circuitry. As a result, the minimum voltage for writing new logic states into the SRAM cell is reduced to permit overall lower operating voltages for the SRAM cell and related circuitry. By continuing to maintain a second side of the SRAM cell at the reference voltage or current, the SRAM cell can successfully switch to a newly written logic state.

    摘要翻译： 提供具有分离电源开关的存储器件以提高静态随机存取存储器（SRAM）单元的可写性，而不会不利地影响其稳定性。 例如，各种分离电源开关电路用于允许在写操作期间与SRAM单元的一侧连接的电源线的电压或电流下降。 该电压降弱了SRAM单元的一侧，并减少了SRAM单元的晶体管与外部写入电路之间的驱动。 结果，将新的逻辑状态写入SRAM单元的最小电压被降低以允许SRAM单元和相关电路的总体较低工作电压。 通过继续以参考电压或电流保持SRAM单元的第二面，SRAM单元可以成功切换到新写入的逻辑状态。