摘要:
A computer-implemented method for efficient sequential logging on caching-enabled storage devices may include 1) identifying a storage device with a cache, 2) allocating space on the storage device for a sequential log, 3) calculating a target size for the sequential log based at least in part on an input/output load directed to the sequential log, and then 4) restricting the sequential log to a portion of the allocated space corresponding to the target size. Various other methods, systems, and computer-readable media are also disclosed.
摘要:
A computer-implemented method for efficient sequential logging on caching-enabled storage devices may include 1) identifying a storage device with a cache, 2) allocating space on the storage device for a sequential log, 3) calculating a target size for the sequential log based at least in part on an input/output load directed to the sequential log, and then 4) restricting the sequential log to a portion of the allocated space corresponding to the target size. Various other methods, systems, and computer-readable media are also disclosed.
摘要:
The present invention relates to a additive composition for use as lubricity improver for low sulphur diesel, comprising c) 0.1-10% by weight of ester derivative derived from cashew nut shell liquid (CNSL esters) of formula (I); f) 0.1-10% by weight of ester derivative derived from cashew nut shell liquid of formula (II); g) 50-95% by weight of free fatty acid of the formula RCOOH in which R represents an alkyl/alkenyl group with 12 to 24 carbon atoms. h) 1-30% by weight of synthetic esters derived by esterifying tri, tetra, penta hydric alcohols with carboxylic acids such as lauric, palmitic, linoleic, ricinoleic etc.
摘要:
The present invention relates to a additive composition for use as lubricity improver for low sulphur diesel, comprising c) 0.1-10% by weight of ester derivative derived from cashew nut shell liquid (CNSL esters) of formula (I); f) 0.1-10% by weight of ester derivative derived from cashew nut shell liquid of formula (II); g) 50-95% by weight of free fatty acid of the formula RCOOH in which R represents an alkyl/alkenyl group with 12 to 24 carbon atoms. h) 1-30% by weight of synthetic esters derived by esterifying tri, tetra, penta hydric alcohols with carboxylic acids such as lauric, palmitic, linoleic, ricinoleic etc.
摘要:
The disclosure provides compounds and methods for treating cancer by inhibiting the formation of cancer cells resistant to paclitaxel by preventing the formation of GBP1:PIM1 protein interaction during a chemotherapeutic treatment. These compounds and methods are able to treat cancer individually or in conjunction with paclitaxel.
摘要:
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer including a plurality of integrated circuits includes forming a water soluble mask above the semiconductor wafer, the water soluble mask covering and protecting the integrated circuits. The method also includes baking the water soluble mask to increase the etch resistance of the water soluble mask. The method also includes, subsequent to baking the water soluble mask, patterning the water soluble mask with a laser scribing process to provide a water soluble patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also includes plasma etching the semiconductor wafer through the gaps in the water soluble patterned mask to singulate the integrated circuits.
摘要:
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits on a front side of the semiconductor wafer includes adhering a back side the semiconductor wafer on the dicing tape of a substrate carrier. Subsequent to adhering the semiconductor wafer on a dicing tape, the dicing tape is treated with a UV-cure process. Subsequent to treating the dicing tape with the UV-cure process, a dicing mask is formed on the front side of the semiconductor wafer, the dicing mask covering and protecting the integrated circuits. The dicing mask is patterned with a laser scribing process to provide gaps in the dicing mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is plasma etched through the gaps in the dicing mask layer to singulate the integrated circuits.
摘要:
Methods of and carriers for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a cover ring for protecting a carrier and substrate assembly during an etch process includes an inner opening having a diameter smaller than the diameter of a substrate of the carrier and substrate assembly. An outer frame surrounds the inner opening. The outer frame has a bevel for accommodating an outermost portion of the substrate of the carrier and substrate assembly.
摘要:
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a phase modulated laser beam profile laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.
摘要:
Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of scribing a semiconductor wafer having a plurality of integrated circuits involves adhering a backside of a semiconductor wafer to an inner portion of a carrier tape of a substrate carrier that includes a tape frame mounted above the carrier tape. The method also involves overlaying a protective frame above a front side of the semiconductor wafer and above an exposed outer portion of the carrier tape, the protective frame having an opening exposing an inner region of the front side of the semiconductor wafer. The method also involves laser scribing the front side of the semiconductor wafer with the protective frame in place.