公开(公告)号：US4699515A

公开(公告)日：1987-10-13

申请号：US705699

申请日：1985-02-26

申请人： Akikazu Tanimoto ,  Toshio Matsuura ,  Kyoichi Suwa

发明人： Akikazu Tanimoto ,  Toshio Matsuura ,  Kyoichi Suwa

IPC分类号： G03F9/00 ,  G01B11/00

CPC分类号： G03F9/70

摘要： In an exposure apparatus for manufacturing semiconductor devices, a pattern on a photomask is aligned with a plurality of patterns formed on a wafer in a manner that detects and corrects misalignment, including, inter alia, rotational errors, not only between a photomask and a wafer, but also between a photomask and individual chips formed on the wafer, so that pattern matching is attained with very high accuracy. Apparatus for achieving this result employs different arrangements of alignment marks together with optical systems and positional adjustment devices.

摘要翻译： 在用于制造半导体器件的曝光装置中，光掩模上的图案以形成在晶片上的多个图案与检测和校正不对准的方式对准，包括尤其是除了光掩模和晶片之间的旋转误差 ，而且在光掩模和形成在晶片上的单个芯片之间，使得以非常高的精度获得图案匹配。 用于实现该结果的装置与光学系统和位置调整装置一起使用对准标记的不同布置。

公开(公告)号：US4677301A

公开(公告)日：1987-06-30

申请号：US681843

申请日：1984-12-14

申请人： Akikazu Tanimoto ,  Toshio Matsuura ,  Seiro Murakami ,  Makoto Uehara ,  Kyoichi Suwa

发明人： Akikazu Tanimoto ,  Toshio Matsuura ,  Seiro Murakami ,  Makoto Uehara ,  Kyoichi Suwa

IPC分类号： G03B27/53 ,  B65G1/00 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  G01N21/86 ,  H01J3/14

CPC分类号： G03F9/70

摘要： A position alignment apparatus aligns a photosensitive substrate and a mask (projection image) at high speed and with high precision. The apparatus has a projection optical system for projecting a pattern image on a mask or reticle onto a photosensitive substrate, a detector for detecting a two-dimensional misalignment of a projected pattern image and a wafer, and means for moving the wafer along orthogonal x- and y-axis directions and for rotating the wafer along a rotational direction within a plane defined by the x- and y-axis directions so as to eliminate the misalignment, wherein the detector has first detecting means with an optical system for detecting at least a misalignment of the wafer along the x-axis direction through the projection lens, and second detecting means with an optical system separate from the projection lens and for detecting at least a misalignment of the wafer along a rotational direction.

摘要翻译： 位置对准装置以高精度和高精度对准感光基片和掩模（投影图象）。 该装置具有用于将掩模或掩模版上的图案图像投影到感光基板上的投影光学系统，用于检测投影图案图像和晶片的二维未对准的检测器，以及用于沿正交x轴移动晶片的装置， 和y轴方向，并且用于在由x轴方向和y轴方向限定的平面内沿着旋转方向旋转晶片，以消除所述未对准，其中所述检测器具有第一检测装置，其具有用于检测至少一个 晶片沿着x轴方向通过投影透镜偏移，以及第二检测装置，其具有与投影透镜分离的光学系统，并用于至少检测晶片沿旋转方向的不对准。

公开(公告)号：USRE32795E

公开(公告)日：1988-12-06

申请号：US895132

申请日：1986-08-11

申请人： Toshio Matsuura ,  Kyoichi Suwa ,  Hisayuki Shimizu ,  Akikazu Tanimoto

发明人： Toshio Matsuura ,  Kyoichi Suwa ,  Hisayuki Shimizu ,  Akikazu Tanimoto

IPC分类号： G03F7/20 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/70058 ,  H01L21/30

摘要： An exposure apparatus for production of ICs of the type that includes a stage on which is placed a semiconductor wafer to be exposed by illumination light projecting means, and means for two-dimensionally moving the stage within a plane intersecting the illumination light at substantially right angles. The improvement comprises illumination detection means provided with a photo reception surface, and means for mounting the illumination detection means on the stage in such a manner that the photo reception surface and the surface of the semiconductor wafer on the stage to be exposed are at substantially equal height relative to the stage.

公开(公告)号：US4465368A

公开(公告)日：1984-08-14

申请号：US335733

申请日：1981-12-30

申请人： Toshio Matsuura ,  Kyoichi Suwa ,  Hisayuki Shimizu ,  Akikazu Tanimoto

发明人： Toshio Matsuura ,  Kyoichi Suwa ,  Hisayuki Shimizu ,  Akikazu Tanimoto

IPC分类号： G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  G01J1/42

CPC分类号： G03F7/70058 ,  H01L21/30

摘要： An exposure apparatus for production of ICs of the type that includes a stage on which is placed a semiconductor wafer to be exposed by illumination light projecting means, and means for two-dimensionally moving the stage within a plane intersecting the illumination light at substantially right angles. The improvement comprises illumination detection means provided with a photo reception surface, and means for mounting the illumination detection means on the stage in such a manner that the photo reception surface and the surface of the semiconductor wafer on the stage to be exposed are at substantially equal height relative to the stage.

摘要翻译： 一种用于制造IC的曝光装置，其包括：被放置在被照明光投射装置曝光的半导体晶片的台上;以及用于在与照明光以大致直角交叉的平面内二维地移动台的装置 。 该改进包括设置有光接收表面的照明检测装置，以及用于将照射检测装置安装在舞台上的装置，使得受光面和要暴露的舞台上的半导体晶片的表面基本相等 高度相对于舞台。

公开(公告)号：US4566795A

公开(公告)日：1986-01-28

申请号：US586639

申请日：1984-03-06

申请人： Toshio Matsuura ,  Kyoichi Suwa

发明人： Toshio Matsuura ,  Kyoichi Suwa

IPC分类号： H01L21/30 ,  G01B11/00 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  G01B11/27

CPC分类号： G03F9/7046 ,  G03F7/70358 ,  G03F9/7049

摘要： An alignment apparatus for aligning one of the substrates with the other by means of first and second reference marks comprises scanning means including a light beam generating means for reciprocally scanning first and second areas respectively by a light beam, discrimination means for generating a discrimination signal indicative of the scanning direction by the scanning means in synchronism with the scanning, first photoelectric means for generating a first signal when the first photoelectric means receives the light beam transmitted through a first area and separated by the first reference mark, second photoelectric means for generating a second signal when the second photoelectric means receives the light beam transmitted through the second area and separated by the second reference mark, operation means for determining the direction and amount of the relative deviation between the first and second reference marks from the first and second signals and from the discrimination signal, and means for moving one of the substrates relative to the other in response to the operation means. The alignment apparatus is simple in structure and can detect alignment marks with higher accuracy. The alignment apparatus enables the alignment of a wafer with a reticle or mask at higher speed and with higher preciseness.

摘要翻译： 用于通过第一和第二参考标记将一个基板与另一个基板对准的对准装置包括扫描装置，其包括用于分别由光束往复扫描第一和第二区域的光束产生装置，用于产生指示 所述第一光电装置用于当所述第一光电装置接收到透过第一区域并被所述第一参考标记分开的光束时产生第一信号;第二光电装置，用于产生第一信号， 第二信号，当第二光电装置接收到通过第二区域传输并被第二参考标记分隔的光束时，用于确定第一和第二参考标记与第一和第二信号之间的相对偏离的方向和量的操作装置，以及 从辨别信号 以及用于响应于操作装置移动基板之一相对于另一个的装置。 对准装置结构简单，可以更精确地检测对准标记。 对准装置使得能够以更高的速度和更高的精度将晶片与掩模版或掩模对准。

公开(公告)号：US4734746A

公开(公告)日：1988-03-29

申请号：US51236

申请日：1987-05-12

申请人： Kazuo Ushida ,  Satoru Anzai ,  Kazuaki Suzuki ,  Toshio Matsuura ,  Kyoichi Suwa ,  Koichi Matsumoto

发明人： Kazuo Ushida ,  Satoru Anzai ,  Kazuaki Suzuki ,  Toshio Matsuura ,  Kyoichi Suwa ,  Koichi Matsumoto

IPC分类号： G03F7/20 ,  G03B27/32 ,  G03B27/42

CPC分类号： G03F7/70066 ,  G03F7/2022 ,  G03F7/70241 ,  G03F7/70458

摘要： An exposure method for photolithography comprises the steps of forming a pattern on a substrate by the use of a first exposure apparatus including a first imaging optical system having a reduction magnification 1/.beta.1 and an image circle of a diameter .phi.1, and forming a second pattern on the substrate on which the first pattern has been formed, by the use of a second exposure apparatus including a second imaging optical system having a reduction magnification 1/.beta.2 different from the reduction magnification 1/.beta.1 and an image circle of a diameter .phi.2, wherein when N is an integer, the conditions that .beta.1.times..phi.1=.beta.2.times..phi.2 and .phi.1=N.times..phi.2 are satisfied.

摘要翻译： 用于光刻的曝光方法包括以下步骤：通过使用包括具有缩小倍率1 /β1的第一成像光学系统和直径φ1的图像圆的第一曝光装置在基板上形成图案，并且形成 通过使用包括具有不同于缩小倍率1 /β1的缩小倍率1 /β2的第二成像光学系统的第二曝光装置和形成第一图案的图像圆的第二图案， 直径phi 2，其中当N是整数时，满足β1 phi 1 =β2 ph 2和ph 1 = N x ph 2的条件。

公开(公告)号：US5434026A

公开(公告)日：1995-07-18

申请号：US989909

申请日：1992-12-11

申请人： Norihiko Takatsu ,  Kyoichi Suwa ,  Shinichi Nakamura ,  Hiroaki Hosokawa ,  Shigeru Hirukawa

发明人： Norihiko Takatsu ,  Kyoichi Suwa ,  Shinichi Nakamura ,  Hiroaki Hosokawa ,  Shigeru Hirukawa

IPC分类号： G03F7/20 ,  G03F7/207 ,  H01L21/027 ,  H01L21/30 ,  G03C5/00

CPC分类号： G03F7/2022 ,  G03F7/70633 ,  G03F7/70641 ,  G03F7/70675

摘要： In a method for measuring a condition for exposing, at a predetermined energy quantity, a pattern formed on a mask onto a photosensitive substrate on which a resist image is formed on the surface thereof by using an exposing device, first patterns formed at a plurality of positions on the mask are successively exposed onto a plurality of partial regions on the photosensitive substrate while changing said exposure condition. Second patterns are, with overlapping, exposed onto at least a portion of the latent image of said first patterns formed in said partial regions due to said process while changing the exposure condition. A predetermined state where the resist image is formed on the resist layer after the development is detected so that the exposure condition is measured in accordance with the state.

摘要翻译： 在通过使用曝光装置测量以预定能量将形成在其上形成有抗蚀剂图像的感光基板上的掩模曝光的条件的方法中，形成多个 在改变所述曝光条件的同时，将掩模上的位置依次曝光在感光基板上的多个部分区域上。 在改变曝光条件的同时，由于所述处理，第二图案重叠地暴露在形成在所述部分区域中的所述第一图案的至少一部分潜像上。 在显影后在抗蚀剂层上形成抗蚀剂图像的预定状态，使得根据状态测量曝光条件。

公开(公告)号：US4806987A

公开(公告)日：1989-02-21

申请号：US135377

申请日：1987-12-21

申请人： Takashi Mori ,  Koichi Matsumoto ,  Tsutomu Takai ,  Masaichi Murakami ,  Kyoichi Suwa

发明人： Takashi Mori ,  Koichi Matsumoto ,  Tsutomu Takai ,  Masaichi Murakami ,  Kyoichi Suwa

IPC分类号： H01L21/30 ,  G03F7/20 ,  H01L21/027 ,  G03B27/42

CPC分类号： G03F7/70475

摘要： A projection-exposing apparatus comprises a projecting optical system for projecting an image of a reticle having a predetermined pattern onto a wafer, and a stage for causing a relative shifting movement between a position of the wafer and a position of the reticle. A first exposure is effected for projecting and exposing the reticle image pattern from the projection optical system in a first area on the wafer and then the stage is shifted by a predetermined amount to effect second exposure for projecting and exposing the reticle image pattern in a second area positioned adjacent to the first area on the wafer thereby the reticle image being projected and exposed onto different areas on the same wafer. The stage causes the relative shifting movement between the reticle and the wafer in such a manner that the reticle image pattern obtained by the first exposure and the reticle image pattern obtained by the second exposure are overlapped with each other on the wafer by a predetermined amount.

摘要翻译： 投影曝光装置包括投影光学系统，用于将具有预定图案的掩模版的图像投影到晶片上，以及用于在晶片的位置和光罩之间进行相对移动的台。 进行第一曝光以在晶片上的第一区域中投影和曝光来自投影光学系统的标线片图像图案，然后将该台移动预定量，以进行第二次曝光，以在第二曝光中投影和曝光标线图像图案 区域定位成与晶片上的第一区域相邻，从而掩模版图像被投影并暴露在同一晶片上的不同区域上。 该阶段以这样的方式引起标线片和晶片之间的相对移动运动，使得通过第一曝光获得的标线图像图案和通过第二次曝光获得的标线图像图案在晶片上彼此重叠预定量。

公开(公告)号：US4770533A

公开(公告)日：1988-09-13

申请号：US51203

申请日：1987-05-18

申请人： Kyoichi Suwa

发明人： Kyoichi Suwa

IPC分类号： G03F1/00 ,  G03F1/38 ,  G03F1/42 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  H01L21/68 ,  G01B11/00

CPC分类号： G03F9/7023 ,  G03F9/7076

摘要： An apparatus for detecting a position of a semiconductor wafer comprises a linear alignment mark formed on a surface of the wafer along a pair of parallel straight lines extending in a given direction intersecting a radial direction of the wafer. The alignment mark includes at least two projection sections projected from the surface and spaced from each other in the given direction. Each of the projection sections has a first stepped edge provided on or along one of the pairs of straight lines and a second stepped edge provided on and along the other of the pair of straight lines, the pair of straight lines being separated from each other by a distance d', and each of the projection sections being defined such that the following relationship is satisfied:l'>d'where l' is the length of one of the projection sections in the given direction. A position of the alignment mark with respect to a direction intersecting the given direction is determined on the basis of light scattered by the first and second stepped edges.

摘要翻译： 用于检测半导体晶片的位置的装置包括沿着沿与晶片的径向相交的给定方向延伸的一对平行直线形成在晶片的表面上的线性对准标记。 对准标记包括从表面突出并且沿给定方向彼此间隔开的至少两个突出部分。 每个突出部分具有设置在一对直线上或沿着一对直线中的一个上的第一阶梯边缘，以及设置在该对直线上并沿着另一条直线的第二台阶边缘，该一对直线彼此分开通过 距离d'，并且每个投影部分被限定为使得满足以下关系：l'> d'其中l'是给定方向上的一个投影部分的长度。 基于由第一和第二台阶边缘散射的光来确定对准标记相对于与给定方向相交的方向的位置。

公开(公告)号：US4704020A

公开(公告)日：1987-11-03

申请号：US903500

申请日：1986-09-04

申请人： Masaichi Murakami ,  Hidemi Kawai ,  Kyoichi Suwa

发明人： Masaichi Murakami ,  Hidemi Kawai ,  Kyoichi Suwa

IPC分类号： H01L21/30 ,  G03F9/00 ,  H01L21/027 ,  H01L21/66 ,  H01L21/67 ,  G01B11/26

CPC分类号： G03F9/7023

摘要： A projection optical apparatus for projecting the pattern of a mask onto a substrate through a projection optical system includes a stage for supporting thereon a substrate having a plurality of marks for detection on the surface thereof, first detecting means for detecting the amount of inclination of the surface of the substrate relative to the surface on which the pattern is projected and imaged, through the projection optical system, second detecting means for detecting the amount of inclination of the surface of the substrate relative to a predetermined reference plane independently of the projection optical system, and calibrating means for calibrating the amount of inclination detected by the second detecting means on the basis of the amount of inclination detected by the first detecting means.

摘要翻译： 一种用于通过投影光学系统将掩模的图案投影到基板上的投影光学装置包括：用于在其上表面支撑具有多个用于检测的标记的基板的台，用于检测其上的倾斜量的第一检测装置 通过投影光学系统相对于图案投射和成像的表面的基板的表面，用于独立于投影光学系统检测基板相对于预定参考平面的表面的倾斜量的第二检测装置 以及校准装置，用于基于由第一检测装置检测到的倾斜量来校准由第二检测装置检测到的倾斜量。