摘要:
Localized temperature increases inside integrated circuits due to heating at operation are prevented or controlled by electronic devices or wirings with CPP (current-perpendicular-to-plane) structures which have a current cooling effect. A CPP structure refers to a structure comprising a columnar electrically conductive portion and an insulator portion surrounding the conductive portion. The columnar portion is formed from a multilayered structure in a direction perpendicular to the plane of the layers, so as to allow a current to flow from an upper layer to a lower layer (or vice versa). The cooling effect is induced by current at the interface (or a plural of interfaces) of appropriately selected different kinds of materials (which are conductive substances in general, such as metals, semiconductors, and alloys thereof) in the columnar portion due to the Peltier effect when a current flows through the column. Temperature in a minute range is detected by a thermocouple with the CPP structure. The thermocouple has two interfaces of different materials with a proper combination. When a temperature difference exists between the two interfaces, a voltage which corresponds to a product of the temperature difference and the Peltier coefficient at the interface is produced. In the same manner, the intensity of the infrared can be also measured.
摘要:
Localized temperature increases inside integrated circuits due to heating at operation are prevented or controlled by electronic devices or wirings with CPP (current-perpendicular-to-plane) structure which has a current cooling effect. The CPP structure refers to a structure comprising a columnar electrically conductive portion and an insulator portion surrounding the conductive portion. The columnar portion is formed from the multilayered structure in a direction perpendicular to the plane of the layers, so as to allow a current to flow from an upper layer to a lower layer (or vice versa). The cooling effect is induced by current at the interface (or a plural of interfaces) of appropriately selected different kinds of materials (which are conductive substances in general, such as metals, semiconductors, and alloys thereof) in the columnar portion due to the Peltier effect when a current flows through the column. Temperature in minute range is detected by thermocouple with CPP structure. The thermocouple has two interfaces of different materials with a proper combination. When a temperature difference exists between two interfaces, a voltage which corresponds to product of the temperature difference and the Peltier coefficient at the interface is produced. In the same manner, the intensity of inferred can be also measured.
摘要:
A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45≦x
摘要翻译:根据实施例的磁阻元件包括:基底层; 第一磁性层,其形成在所述基底层上,并且包括在垂直于膜平面的方向上具有容易磁化的轴的第一磁性膜,所述第一磁性膜包括Mn x Ga 100-x(45≤n1E; x <64原子%); 形成在第一磁性层上的第一非磁性层; 以及形成在所述第一非磁性层上的第二磁性层,并且包括在垂直于膜平面的方向上具有容易磁化的轴的第二磁性膜,所述第二磁性膜包括MnyGa100-y(45&lt; IL1; y <64原子%), 。 第一和第二磁性层包括彼此不同的Mn组成比,第一磁性层的磁化方向可以通过第一非磁性层在第一磁性层和第二磁性层之间流动的电流而改变。
摘要:
According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.
摘要:
A magnetoresistive element according to an embodiment includes: a first and second magnetic layers having an easy axis of magnetization in a direction perpendicular to a film plane; and a first nonmagnetic layer interposed between the first and second magnetic layers, at least one of the first and second magnetic layers including a structure formed by stacking a first and second magnetic films, the second magnetic film being located closer to the first nonmagnetic layer, the second magnetic film including a structure formed by repeating stacking of a magnetic material layer and a nonmagnetic material layer at least twice, the nonmagnetic material layers of the second magnetic film containing at least one element selected from the group consisting of Ta, W, Hf, Zr, Nb, Mo, Ti, V, and Cr, one of the first and second magnetic layers having a magnetization direction that is changed by applying a current.
摘要:
A magneto-resistive device has a magnetic free layer (33), a magnetic pinned layer (31) having a magnetic moment larger than that of the magnetic free layer, and an intermediate layer (32) provided between the magnetic free layer and the magnetic pinned layer. The negative-resistance device is characterized in that the negative-resistance device shows negative resistance by making the magnetic free layer continually change the magnetization direction along with the increase of the voltage which is applied to a magneto-resistive device so that electrons flow into the negative-resistance device from a magnetic free layer side.
摘要:
A magnetoresistive element according to an embodiment includes: a first and second magnetic layers having an easy axis of magnetization in a direction perpendicular to a film plane; and a first nonmagnetic layer interposed between the first and second magnetic layers, at least one of the first and second magnetic layers including a structure formed by stacking a first and second magnetic films, the second magnetic film being located closer to the first nonmagnetic layer, the second magnetic film including a structure formed by repeating stacking of a magnetic material layer and a nonmagnetic material layer at least twice, the nonmagnetic material layers of the second magnetic film containing at least one element selected from the group consisting of Ta, W, Hf, Zr, Nb, Mo, Ti, V, and Cr, one of the first and second magnetic layers having a magnetization direction that is changed by applying a current.
摘要:
According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.
摘要:
According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.
摘要:
According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.