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    AMPLIFYING APPARATUS USING MAGNETO-RESISTIVE DEVICE
    2.
    发明申请
    AMPLIFYING APPARATUS USING MAGNETO-RESISTIVE DEVICE 审中-公开
    放大器使用磁电阻器件

    公开(公告)号：US20090322419A1

    公开(公告)日：2009-12-31

    申请号：US12506201

    申请日：2009-07-20

    申请人： Hiroki Maehara ,  Hitoshi Kubota ,  Akio Fukushima ,  Shinji Yuasa ,  Yoshishige Suzuki ,  Yoshinori Nagamine

    发明人： Hiroki Maehara ,  Hitoshi Kubota ,  Akio Fukushima ,  Shinji Yuasa ,  Yoshishige Suzuki ,  Yoshinori Nagamine

    IPC分类号： H03F1/00

    CPC分类号： H01L29/66984 ,  G11C11/161 ,  H01L29/82 ,  H01L43/08

    摘要： An amplifying apparatus includes a magneto-resistive device which has a magnetic free layer, a magnetic pinned layer having a magnetic moment larger than that of the magnetic free layer, and an intermediate layer provided in between the magnetic free layer and the magnetic pinned layer. The amplifying apparatus has a first electrode layer provided in a magnetic free layer side of the magneto-resistive device, and a second electrode layer provided in a magnetic pinned layer side of the magneto-resistive device. The amplifying apparatus further includes a direct-current bias power-source for applying a direct-current bias to the magneto-resistive device, and a load resistor. The amplifying apparatus continually causes the change of a magnetization direction of the magnetic free layer to make the magneto-resistive device show negative resistance, and thereby amplifies an input signal.

    摘要翻译： 放大装置包括具有无磁性层的磁阻装置，具有比无磁性层的磁矩大的磁矩的磁性固定层以及设置在磁性自由层和磁性固定层之间的中间层。 放大装置具有设置在磁阻装置的磁性自由层侧的第一电极层和设置在磁阻装置的磁性固定层侧的第二电极层。 放大装置还包括用于向磁阻装置施加直流偏压的直流偏置电源和负载电阻。 放大装置持续地引起磁性自由层的磁化方向的变化，使得磁阻装置显示负电阻，从而放大输入信号。

    Method of Manufacturing Magnetoresistance Effect Element and Apparatus for Manufacturing the Same
    5.
    发明申请
    Method of Manufacturing Magnetoresistance Effect Element and Apparatus for Manufacturing the Same 审中-公开
    制造磁阻效应元件的方法及其制造方法

    公开(公告)号：US20090148595A1

    公开(公告)日：2009-06-11

    申请号：US12224646

    申请日：2007-02-26

    申请人： Yoshinori Nagamine ,  Koji Tsunekawa ,  David Djulianto Djayaprawira ,  Hiroki Maehara

    发明人： Yoshinori Nagamine ,  Koji Tsunekawa ,  David Djulianto Djayaprawira ,  Hiroki Maehara

    IPC分类号： B05D5/12

    CPC分类号： H01L43/08 ,  C23C14/081 ,  C23C14/16 ,  C23C14/568 ,  H01J37/32458 ,  H01J37/32633 ,  H01J37/34 ,  H01J37/3429 ,  H01J37/3447 ,  H01L43/12

    摘要： A method of manufacturing a magnetoresistance effect element having a high MR ratio even with a low RA and an apparatus of the same are provided. The magnetoresistance effect element having an MgO (magnesium oxide) layer provided between a ferromagnetic layer and a second ferromagnetic layer is manufactured by forming a film of the MgO layer in a film forming chamber in which a substance whose getter effect with respect to the oxidizing gas such as oxygen or water is large is adhered to the surfaces of components (an inner wall 37 of a film forming chamber in the interior of a first film forming chamber 21, inner walls of an adhesion preventing shield 36, a partitioning plate 22, a shutter or the like) provided in the chamber for forming the MgO layer. The substance having a large getter effect must simply be a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher and, in particular, Ta (tantalum) as a substance which constitutes the magnetoresistance effect element is preferable.

    摘要翻译： 提供一种制造即使具有低RA的MR比高的磁阻效应元件及其装置的方法。 具有设置在铁磁层和第二铁磁层之间的具有MgO（氧化镁）层的磁电阻效应元件通过在成膜室中形成MgO层的膜来制造，其中，相对于氧化气体的吸气剂效应 例如氧或水大的部件（第一成膜室21的内部的成膜室的内壁37，防粘附防护罩36的内壁，分隔板22， 闸门等），其设置在用于形成MgO层的室中。 具有大的吸气剂效果的物质必须简单地是氧气吸附能的值为145kcal / mol以上的物质，特别是作为构成磁阻效应元素的物质的Ta（钽）是优选的物质。

    VACUUM THIN FILM FORMING APPARATUS
    7.
    发明申请
    VACUUM THIN FILM FORMING APPARATUS 审中-公开
    真空薄膜成型装置

    公开(公告)号：US20100200394A1

    公开(公告)日：2010-08-12

    申请号：US12719920

    申请日：2010-03-09

    申请人： Yoshinori Nagamine ,  Kanto Nakamura ,  Koji Tsunekawa

    发明人： Yoshinori Nagamine ,  Kanto Nakamura ,  Koji Tsunekawa

    IPC分类号： C23C14/34

    CPC分类号： C23C14/225 ,  C23C14/081 ,  C23C14/345 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32706 ,  H01J37/34 ,  H01L43/12

    摘要： In order to automatically adjust a self-bias on a substrate to a constant value at all times and to form a high-quality insulating film with excellent process reproducibility, a vacuum thin film forming apparatus according to the present invention includes: a high-frequency sputtering device having a chamber, an evacuation means for evacuating the inside of the chamber, a gas introduction means for supplying gas into the chamber, a substrate holder provided within the chamber, and an electrode provided within the substrate holder; and at least one vacuum treatment chamber that can be selected from a group including a physical vapor deposition (PVD) chamber, a chemical vapor deposition (CVD) chamber, a physical etching chamber, a chemical etching chamber, a substrate heating chamber, a substrate cooling chamber, an oxidation treatment chamber, a reduction treatment chamber, and an ashing chamber, wherein the high-frequency sputtering device further includes a variable impedance mechanism electrically connected to the electrode for adjusting the potential of the substrate on the substrate holder.

    摘要翻译： 为了始终将基板上的自偏压自动调整为恒定值，并且形成具有优异的工艺再现性的高品质绝缘膜，根据本发明的真空薄膜形成装置包括：高频 具有室的溅射装置，用于抽空室内的抽气装置，用于向室内供给气体的气体引入装置，设置在室内的基板保持架以及设置在基板保持架内的电极; 以及至少一个真空处理室，其可以选自包括物理气相沉积（PVD）室，化学气相沉积（CVD）室，物理蚀刻室，化学蚀刻室，基板加热室，基板 冷却室，氧化处理室，还原处理室和灰化室，其中所述高频溅射装置还包括电连接到所述电极的可变阻抗机构，用于调节所述基板保持器上的所述基板的电位。

    Wiper control system for automotive vehicle facilitated front and rear wipers
    8.
    发明授权
    Wiper control system for automotive vehicle facilitated front and rear wipers 失效
    汽车刮水器控制系统方便前后雨刷

    公开(公告)号：US4881019A

    公开(公告)日：1989-11-14

    申请号：US44053

    申请日：1987-04-29

    申请人： Yasuhiro Shiraishi ,  Yoshinori Nagamine

    发明人： Yasuhiro Shiraishi ,  Yoshinori Nagamine

    IPC分类号： B60S1/08 ,  B60S1/48 ,  B60S1/58

    CPC分类号： B60S1/485 ,  B60S1/486 ,  B60S1/583 ,  Y10S318/02

    摘要： A wiper control system includes a rear wiper control circuit associated with a front wiper control circuit. The wiper drive signals generated in the front wiper control circuit are fed to the rear wiper control circuit. The rear wiper control circuit derives a rear wiper drive timing on the basis of the occurrences of the front wiper drive signals. The rear wiper driving frequency is generally lower than that of the front wiper driving frequency. The lower rate of the rear wiper driving frequency relative to the front wiper driving frequency is preferably variable depending upon the vehicle driving condition.

    摘要翻译： 刮水器控制系统包括与前雨刮器控制电路相关联的后雨刮器控制电路。 在前雨刮器控制电路中产生的刮水器驱动信号被馈送到后雨刮器控制电路。 后雨刮器控制电路基于前雨刮器驱动信号的发生而导出后雨刮器驱动定时。 后雨刮器的驱动频率通常低于前雨刷器的驱动频率。 后雨刷驱动频率相对于前雨刷器驱动频率的较低速率优选地根据车辆驾驶状况而变化。

    VACUUM HEATING AND COOLING APPARATUS
    9.
    发明申请
    VACUUM HEATING AND COOLING APPARATUS 审中-公开
    真空加热和冷却装置

    公开(公告)号：US20110253037A1

    公开(公告)日：2011-10-20

    申请号：US13093906

    申请日：2011-04-26

    申请人： Koji Tsunekawa ,  Yoshinori Nagamine ,  Naoyuki Suzuki ,  Takuji Okada ,  Shinichi Inaba

    发明人： Koji Tsunekawa ,  Yoshinori Nagamine ,  Naoyuki Suzuki ,  Takuji Okada ,  Shinichi Inaba

    IPC分类号： F27D11/12 ,  H01L21/00 ,  B05C11/00 ,  C23C14/56 ,  B05C9/14

    CPC分类号： H01L21/67109 ,  C23C14/541 ,  G11C11/16 ,  H01L21/67115 ,  H01L21/67748 ,  H01L21/68742

    摘要： The vacuum heating and cooling apparatus can rapidly heat and cool only the substrate after film-forming treatment while maintaining high vacuum. The temperature rise of members in the chamber with time caused by accumulation of heat is suppressed, and the variation of temperature between substrates is decreased. In an embodiment, the heating and cooling apparatus for heating and cooling a substrate in a vacuum, includes: a vacuum chamber; a radiation energy source positioned at the vacuum chamber on an atmosphere side for emitting a heating light; an incidence part for causing the heating light from the radiation energy source to enter the vacuum chamber; a substrate-holding member for holding the substrate; and a substrate-transfer mechanism for transferring the substrate held by the substrate-holding member in a heating state to a heating position proximal to the radiation energy source, and transferring the substrate and the substrate-holding member in a non-heating state to a non-heating position distant from the radiation energy source, wherein the substrate-holding member has a plate shape for placing the substrate thereon and has an outer shape larger than that of the incidence part for causing the heating light to enter the vacuum chamber.

    摘要翻译： 真空加热和冷却装置可以在保持高真空度的情况下在成膜处理之后快速地加热和冷却基板。 由于积聚而导致室内部件的温度升高受到抑制，基板间的温度变化也降低。 在一个实施例中，用于在真空中加热和冷却基板的加热和冷却装置包括：真空室; 辐射能源，其位于气氛侧的真空室处，用于发射加热光; 用于使来自辐射能源的加热光进入真空室的入射部分; 用于保持所述基板的基板保持部件; 以及基板转印机构，用于将由基板保持部件保持的基板以加热状态转印到靠近所述辐射能量源的加热位置，并将所述基板和所述基板保持部件以非加热状态转印到 远离辐射能源的非加热位置，其中基板保持构件具有用于将基板放置在其上的板形状，并且具有比用于使加热光进入真空室的入射部分大的外形。

    FABRICATING METHOD OF MAGNETORESISTIVE ELEMENT, AND STORAGE MEDIUM
    10.
    发明申请
    FABRICATING METHOD OF MAGNETORESISTIVE ELEMENT, AND STORAGE MEDIUM 审中-公开
    磁性元件的制造方法和存储介质

    公开(公告)号：US20100080894A1

    公开(公告)日：2010-04-01

    申请号：US12551753

    申请日：2009-09-01

    申请人： Koji Tsunekawa ,  Yoshinori Nagamine

    发明人： Koji Tsunekawa ,  Yoshinori Nagamine

    IPC分类号： B05D5/12

    CPC分类号： H01L27/222 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

    摘要： The present invention provides a fabricating method of a magnetoresistive element having an MR ratio higher than a conventional MR ratio. In a step of depositing a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer on a substrate using a sputtering method in one embodiment of the present invention, the step of depositing the magnetization fixed layer deposits a ferromagnetic layer containing Co atoms, Fe atoms, and B atoms by a co-sputtering method using a first target containing Co atoms, Fe atoms and B atoms, and a second target having different B atom content from that of the first target.

    摘要翻译： 本发明提供一种具有高于常规MR比的MR比的磁阻元件的制造方法。 在本发明的一个实施例中，使用溅射法在基板上沉积磁化固定层，磁化自由层和隧道势垒层的步骤中，沉积磁化固定层的步骤沉积含有Co原子的铁磁层 通过使用包含Co原子，Fe原子和B原子的第一靶的共溅射法，和与第一靶相同的B原子含量的第二靶，通过共溅射法。