公开(公告)号：US20120073651A1

公开(公告)日：2012-03-29

申请号：US13228754

申请日：2011-09-09

申请人： Akira Fujimoto ,  Eishi Tsutsumi ,  Tsutomu Nakanishi ,  Kumi Masunaga ,  Kenji Nakamura ,  Koji Asakawa

发明人： Akira Fujimoto ,  Eishi Tsutsumi ,  Tsutomu Nakanishi ,  Kumi Masunaga ,  Kenji Nakamura ,  Koji Asakawa

IPC分类号： H01L31/0368 ,  H01L31/02

CPC分类号： H01L31/0236 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/0543 ,  H01L31/055 ,  H01L31/068 ,  H01L31/073 ,  Y02E10/52 ,  Y02E10/543 ,  Y02E10/547

摘要： A photoelectric conversion element according to an embodiments includes: a first metal layer; a semiconductor layer formed on the first metal layer; a second metal layer formed on the semiconductor layer, the second metal layer comprising a porous thin film with a plurality of openings each having a mean area not smaller than 80 nm2 and not larger than 0.8 μm2 or miniature structures having a mean volume not smaller than 4 nm3 and not larger than 0.52 μm3; and a wavelength converting layer formed between the semiconductor layer and the second metal layer, at least a refractive index of a portion of the wavelength converting layer being lower than a refractive index of a material of the semiconductor layer, the portion being at a distance of 5 nm or shorter from an end portion of the second metal layer.

摘要翻译： 根据实施例的光电转换元件包括：第一金属层; 形成在所述第一金属层上的半导体层; 形成在所述半导体层上的第二金属层，所述第二金属层包括具有多个开口的多孔薄膜，每个开口的平均面积不小于80nm 2且不大于0.8μm2，或平均体积不小于 4nm3且不大于0.52μm3; 以及形成在所述半导体层和所述第二金属层之间的波长转换层，所述波长转换层的一部分的折射率的至少折射率低于所述半导体层的材料的折射率，所述部分距离 距第二金属层的端部为5nm以下。

公开(公告)号：US20100236620A1

公开(公告)日：2010-09-23

申请号：US12706338

申请日：2010-02-16

申请人： Tsutomu NAKANISHI ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Kumi Masunaga ,  Ryota Kitagawa ,  Koji Asakawa ,  Hideyuki Nishizawa

发明人： Tsutomu NAKANISHI ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Kumi Masunaga ,  Ryota Kitagawa ,  Koji Asakawa ,  Hideyuki Nishizawa

IPC分类号： H01L31/0236 ,  H01L31/18

CPC分类号： H01L31/1884 ,  H01L31/022433 ,  H01L31/075 ,  Y02E10/548

摘要： According to one aspect of the present invention, there is provided a thin film solar cell comprising a substrate, a photoelectric conversion layer formed on said substrate, said photoelectric conversion layer having a thickness of 1 μm or less, and said photoelectric conversion layer comprising a p-type semiconductor layer, an n-type semiconductor layer, and are i-type semiconductor layer placed between said p-type semiconductor layer and said n-type semiconductor layer, a light-incident side electrode layer formed on a light-incident surface of said photoelectric conversion layer and a counter electrode layer formed on the surface opposite to the light-incident surface. Said light-incident side electrode layer has plural openings bored though said layer, and the thickness thereof is in the range of 10 nm to 200 nm. Each of said openings occupies an area of 80 nm2 to 0.8 μm2. The opening ratio is in the range of 10% to 66%.

摘要翻译： 根据本发明的一个方面，提供了一种薄膜太阳能电池，其包括基板，形成在所述基板上的光电转换层，所述光电转换层的厚度为1μm以下，所述光电转换层包括 p型半导体层，n型半导体层，并且是位于所述p型半导体层和所述n型半导体层之间的i型半导体层，形成在光入射表面上的光入射侧电极层 的所述光电转换层和形成在与所述光入射表面相对的表面上的对电极层。 所述光入射侧电极层具有贯穿所述层的多个开口，其厚度在10nm至200nm的范围内。 每个所述开口占据80nm 2至0.8μm2的面积。 开口率在10％至66％的范围内。

公开(公告)号：US09136405B2

公开(公告)日：2015-09-15

申请号：US12700063

申请日：2010-02-04

申请人： Eishi Tsutsumi ,  Kumi Masunaga ,  Ryota Kitagawa ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Hideyuki Nishizawa ,  Koji Asakawa

发明人： Eishi Tsutsumi ,  Kumi Masunaga ,  Ryota Kitagawa ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Hideyuki Nishizawa ,  Koji Asakawa

IPC分类号： H01L31/00 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/075

CPC分类号： H01L31/022433 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/548

摘要： The present invention provides a light transmission type solar cell excellent in both power generation efficiency and light transparency, and also provides a method for producing that solar cell. The solar cell of the present invention comprises a photoelectric conversion layer, a light-incident side electrode layer, and a counter electrode layer. The incident side electrode layer is provided with plural openings bored through the layer, and has a thickness of 10 nm to 200 nm. Each of the openings occupies an area of 80 nm2 to 0.8 μm2, and the opening ratio is in the range of 10% to 66%. The transmittance of the whole cell is 5% or more at 700 nm wavelength. The incident side electrode layer can be formed by etching fabrication with a stamper. In the etching fabrication, a mono-particle layer of fine particles or a dot pattern formed by self-assembled block copolymer can be used as a mask.

摘要翻译： 本发明提供一种发光效率和光透射性优异的透光型太阳能电池，并且还提供一种太阳能电池的制造方法。 本发明的太阳能电池包括光电转换层，光入射侧电极层和对电极层。 入射侧电极层设置有穿过层的多个开口，并且具有10nm至200nm的厚度。 每个开口占据80nm 2至0.8μm2的面积，并且开口率在10％至66％的范围内。 在700nm波长下，全细胞的透射率为5％以上。 入射侧电极层可以通过用压模进行蚀刻制造来形成。 在蚀刻制造中，可以使用通过自组装嵌段共聚物形成的细颗粒的单粒子层或点图案作为掩模。

公开(公告)号：US20120042946A1

公开(公告)日：2012-02-23

申请号：US13216977

申请日：2011-08-24

申请人： Kumi Masunaga ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi ,  Ryota Kitagawa ,  Koji Asakawa ,  Hideyuki Nishizawa

发明人： Kumi Masunaga ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi ,  Ryota Kitagawa ,  Koji Asakawa ,  Hideyuki Nishizawa

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/0236 ,  H01L31/022433 ,  Y02E10/50

摘要： The embodiment provides a solar cell and a manufacturing process thereof. The solar cell is equipped with an electrode on the light incident surface side; and the electrode has both low resistivity and high transparency, can efficiently utilize solar light for excitation of carriers, and can be made of inexpensive materials. The solar cell comprises a photoelectric conversion layer, a first electrode layer arranged on the light incident surface side, and a second electrode layer arranged opposed to the first electrode layer. The first electrode layer has a thickness in the range of 10 to 200 nm, and has plural penetrating openings. Each of the individual openings occupies an area in the range of 80 nm2 to 0.8 μm2, and the aperture ratio thereof is in the range 10 to 66%. The first electrode layer in the cell can be produced by etching procedure using an etching mask obtained by use of a single particle layer of fine particles, by use of a dot pattern formed by self-assembly of a block copolymer, or by use of a stamper.

摘要翻译： 本实施例提供一种太阳能电池及其制造方法。 太阳能电池在光入射面侧配备有电极; 并且电极具有低电阻率和高透明度，可以有效地利用太阳光用于载流子的激发，并且可以由廉价的材料制成。 太阳能电池包括光电转换层，布置在光入射表面侧的第一电极层和与第一电极层相对布置的第二电极层。 第一电极层的厚度为10〜200nm，具有多个贯通孔。 每个单独的开口占据在80nm 2至0.8μm2范围内的面积，并且其开口率在10至66％的范围内。 电池中的第一电极层可以通过使用通过使用单颗粒细小颗粒层获得的蚀刻掩模，通过使用通过嵌段共聚物的自组装形成的点图案或通过使用 压模。

公开(公告)号：US20120061712A1

公开(公告)日：2012-03-15

申请号：US13038154

申请日：2011-03-01

申请人： Kumi Masunaga ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Kumi Masunaga ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/40

CPC分类号： H01L33/38 ,  H01L33/40

摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a light emitting layer, a second semiconductor layer, a third semiconductor layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions penetrate the metal portion and have an equivalent circle diameter of a shape of the opening portions. The light emitting layer is between the first semiconductor layer and the first electrode layer. The second semiconductor layer of a second conductivity type is between the light emitting layer and the first electrode layer. The third semiconductor layer of a second conductivity type is between the second semiconductor layer and the first electrode layer. The second electrode layer is connected to the first semiconductor layer.

摘要翻译： 半导体发光器件包括第一导电类型的第一半导体层，第一电极层，发光层，第二半导体层，第三半导体层和第二电极层。 第一电极层包括具有多个开口部的金属部。 开口部分穿透金属部分并且具有开口部分形状的当量圆直径。 发光层位于第一半导体层和第一电极层之间。 第二导电类型的第二半导体层位于发光层和第一电极层之间。 第二导电类型的第三半导体层位于第二半导体层和第一电极层之间。 第二电极层连接到第一半导体层。

公开(公告)号：US09318661B2

公开(公告)日：2016-04-19

申请号：US13038154

申请日：2011-03-01

申请人： Kumi Masunaga ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Kumi Masunaga ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/40

CPC分类号： H01L33/38 ,  H01L33/40

摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a light emitting layer, a second semiconductor layer, a third semiconductor layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions penetrate the metal portion and have an equivalent circle diameter of a shape of the opening portions. The light emitting layer is between the first semiconductor layer and the first electrode layer. The second semiconductor layer of a second conductivity type is between the light emitting layer and the first electrode layer. The third semiconductor layer of a second conductivity type is between the second semiconductor layer and the first electrode layer. The second electrode layer is connected to the first semiconductor layer.

摘要翻译： 半导体发光器件包括第一导电类型的第一半导体层，第一电极层，发光层，第二半导体层，第三半导体层和第二电极层。 第一电极层包括具有多个开口部的金属部。 开口部分穿透金属部分并且具有开口部分形状的当量圆直径。 发光层位于第一半导体层和第一电极层之间。 第二导电类型的第二半导体层位于发光层和第一电极层之间。 第二导电类型的第三半导体层位于第二半导体层和第一电极层之间。 第二电极层连接到第一半导体层。

公开(公告)号：US08450768B2

公开(公告)日：2013-05-28

申请号：US13335984

申请日：2011-12-23

申请人： Ryota Kitagawa ,  Koji Asakawa ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi

发明人： Ryota Kitagawa ,  Koji Asakawa ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L2933/0091

摘要： The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.

摘要翻译： 本发明提供一种半导体发光元件，其包括欧姆接触性优异且能够从整个表面发光的电极部。 放置在光提取侧的电极层包括金属部分和多个开口。 金属部分是连续的，使得零件中的任何一个点位置连续地连接而不断裂，并且整个区域的95％或更多的金属部分在直线上不间断地继续直线而不断裂，直线距离不大于 从活性层发射的光的1/3。 平均开口直径为发射光波长的10nm至1/3。 电极层的厚度为10nm〜200nm，与半导体层良好的欧姆接触。

公开(公告)号：US20090211783A1

公开(公告)日：2009-08-27

申请号：US12236132

申请日：2008-09-23

申请人： Eishi Tsutsumi ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Koji Asakawa

发明人： Eishi Tsutsumi ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Koji Asakawa

IPC分类号： H01B5/00 ,  H01J9/00

CPC分类号： H01B13/0036 ,  H01J1/02 ,  H01J9/02 ,  H01J17/04 ,  H01J63/02 ,  H01J2217/49207

摘要： The present invention provides a light-transmitting metal electrode including a substrate and a metal electrode layer having plural openings. The metal electrode layer also has such a continuous metal part that any pair of point-positions in the part is continuously connected without breaks. The openings in the metal electrode layer are periodically arranged to form plural microdomains. The plural microdomains are so placed that the in-plane arranging directions thereof are oriented independently of each other. The thickness of the metal electrode layer is in the range of 10 to 200 nm.

摘要翻译： 本发明提供一种透光性金属电极，其具有基板和具有多个开口部的金属电极层。 金属电极层还具有这样的连续的金属部分，即零件中的任何一个点位置连续连接而不断裂。 周期性地布置金属电极层中的开口以形成多个微区域。 多个微区被放置成使得其面内排列方向彼此独立地取向。 金属电极层的厚度在10〜200nm的范围内。

公开(公告)号：US07928353B2

公开(公告)日：2011-04-19

申请号：US12392691

申请日：2009-02-25

申请人： Akira Fujimoto ,  Koji Asakawa ,  Tsutomu Nakanishi ,  Eishi Tsutsumi ,  Ryota Kitagawa

发明人： Akira Fujimoto ,  Koji Asakawa ,  Tsutomu Nakanishi ,  Eishi Tsutsumi ,  Ryota Kitagawa

IPC分类号： H01J1/46

CPC分类号： H01L51/5203 ,  H01L51/5234 ,  H01L2251/5315

摘要： The Present invention provides an organic EL display and a lighting device having high efficiency. The organic EL display comprises a substrate, a pixel-driving circuit unit, and pixels arranged in the form of a matrix on the substrate. The pixel comprises a light-emitting part, and the light-emitting part is composed of a first electrode placed near to the substrate, a second electrode placed far from the substrate, and at least one organic layer placed between the first and second electrodes. The second electrode has a metal electrode layer having a thickness of 10 nm to 200 nm, and the metal electrode layer comprises a metal part and plural openings penetrating through the layer. The metal part is seamless and formed of metal continuously connected without breaks between any points therein. The openings have an average opening diameter of 10 nm to 780 nm, and are arranged so periodically that the distribution of the arrangement is represented by a radial distribution function curve having a half-width of 5 nm to 300 nm.

摘要翻译： 本发明提供一种高效率的有机EL显示器和照明装置。 有机EL显示器包括基板，像素驱动电路单元和在基板上以矩阵形式布置的像素。 像素包括发光部分，并且发光部分由放置在基板附近的第一电极，远离基板的第二电极和放置在第一和第二电极之间的至少一个有机层组成。 第二电极具有厚度为10nm至200nm的金属电极层，并且金属电极层包括金属部分和贯穿该层的多个开口。 金属部件是无缝的，并且由连续连接的金属形成，其中任何点之间没有断裂。 开口的平均开口直径为10nm〜780nm，并且周期性地布置，使得布置的分布由半宽度为5nm至300nm的径向分布函数曲线表示。

公开(公告)号：US08686459B2

公开(公告)日：2014-04-01

申请号：US12236132

申请日：2008-09-23

申请人： Eishi Tsutsumi ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Koji Asakawa

发明人： Eishi Tsutsumi ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Koji Asakawa

IPC分类号： H01L33/00

CPC分类号： H01B13/0036 ,  H01J1/02 ,  H01J9/02 ,  H01J17/04 ,  H01J63/02 ,  H01J2217/49207

摘要： The present invention provides a light-transmitting metal electrode including a substrate and a metal electrode layer having plural openings. The metal electrode layer also has such a continuous metal part that any pair of point-positions in the part is continuously connected without breaks. The openings in the metal electrode layer are periodically arranged to form plural microdomains. The plural microdomains are so placed that the in-plane arranging directions thereof are oriented independently of each other. The thickness of the metal electrode layer is in the range of 10 to 200 nm.

摘要翻译： 本发明提供一种透光性金属电极，其具有基板和具有多个开口部的金属电极层。 金属电极层还具有这样的连续的金属部分，即零件中的任何一个点位置连续连接而不断裂。 周期性地布置金属电极层中的开口以形成多个微区域。 多个微区被放置成使得其面内排列方向彼此独立地取向。 金属电极层的厚度在10〜200nm的范围内。