公开(公告)号：US20080153314A1

公开(公告)日：2008-06-26

申请号：US11987493

申请日：2007-11-30

申请人： Akira Hayashida ,  Masaaki Ueno ,  Masakazu Shimada ,  Yukinori Aburatani ,  Tomoyuki Yamada ,  Sieyo Nakashima ,  Masashi Sugishita

发明人： Akira Hayashida ,  Masaaki Ueno ,  Masakazu Shimada ,  Yukinori Aburatani ,  Tomoyuki Yamada ,  Sieyo Nakashima ,  Masashi Sugishita

IPC分类号： H01L21/00 ,  B01J19/00 ,  F27B5/14

CPC分类号： H01L21/67109 ,  F27B17/0025

摘要： An object of the present invention is to improve substrate processing efficiency. A substrate processing apparatus has a reaction tube that processes a substrate inside, and a heating apparatus disposed so as to surround an external periphery of the reaction tube, so that at least a gas inlet tube is disposed on a side surface in an area in which the substrate is processed inside the reaction tube, and the heating apparatus has a heat insulator that surrounds the reaction tube, an inlet opening formed in the shape of a groove in the heat insulator from the lower end of the heating apparatus so as to avoid the gas inlet tube, and a heating element disposed between the heat insulator and the reaction tube.

摘要翻译： 本发明的目的是提高基板处理效率。 基板处理装置具有处理内部的基板的反应管和设置成围绕反应管的外周的加热装置，使得至少一个气体入口管设置在其中的 在反应管内加工基板，加热装置具有围绕反应管的绝热体，从加热装置的下端形成为绝热体的槽状的入口开口，以避免 气体入口管和设置在隔热件和反应管之间的加热元件。

公开(公告)号：US07700054B2

公开(公告)日：2010-04-20

申请号：US11987493

申请日：2007-11-30

申请人： Akira Hayashida ,  Masaaki Ueno ,  Masakazu Shimada ,  Yukinori Aburatani ,  Tomoyuki Yamada ,  Seiyo Nakashima ,  Masashi Sugishita

发明人： Akira Hayashida ,  Masaaki Ueno ,  Masakazu Shimada ,  Yukinori Aburatani ,  Tomoyuki Yamada ,  Seiyo Nakashima ,  Masashi Sugishita

IPC分类号： H01L21/00 ,  B01J19/00 ,  F27B5/14

CPC分类号： H01L21/67109 ,  F27B17/0025

摘要： An object of the present invention is to improve substrate processing efficiency. A substrate processing apparatus has a reaction tube that processes a substrate inside, and a heating apparatus disposed so as to surround an external periphery of the reaction tube, so that at least a gas inlet tube is disposed on a side surface in an area in which the substrate is processed inside the reaction tube, and the heating apparatus has a heat insulator that surrounds the reaction tube, an inlet opening formed in the shape of a groove in the heat insulator from the lower end of the heating apparatus so as to avoid the gas inlet tube, and a heating element disposed between the heat insulator and the reaction tube.

摘要翻译： 本发明的目的是提高基板处理效率。 基板处理装置具有处理内部的基板的反应管和设置成围绕反应管的外周的加热装置，使得至少一个气体入口管设置在其中的 在反应管内加工基板，加热装置具有围绕反应管的绝热体，从加热装置的下端形成为绝热体的槽状的入口开口，以避免 气体入口管和设置在隔热件和反应管之间的加热元件。

公开(公告)号：US20090016706A1

公开(公告)日：2009-01-15

申请号：US12213823

申请日：2008-06-25

申请人： Akira Hayashida ,  Masaaki Ueno ,  Masakazu Shimada ,  Masashi Sugishita ,  Toshimitsu Miyata ,  Kimio Kitamura ,  Kenji Tanaka ,  Jyunichi Nishihara

发明人： Akira Hayashida ,  Masaaki Ueno ,  Masakazu Shimada ,  Masashi Sugishita ,  Toshimitsu Miyata ,  Kimio Kitamura ,  Kenji Tanaka ,  Jyunichi Nishihara

IPC分类号： F26B3/28

CPC分类号： H01L21/67109 ,  H01L21/67115

摘要： A heating apparatus comprises a wall for surrounding and defining a heating space, a heating element mounted on the inner side of the wall, reflecting members for reflecting the heat emitted from the heating element. Also, a moving unit joined to one end of each of the reflecting members for moving the reflecting members. Moreover, pivotal members joined to the reflecting members beside more their respective other side than one side of the reflecting members for controlling as pivots the movement of the reflecting member driven by the moving unit.

摘要翻译： 加热装置包括用于围绕和限定加热空间的壁，安装在壁的内侧上的加热元件，用于反射从加热元件发出的热的反射构件。 而且，移动单元连接到每个反射构件的一端以移动反射构件。 此外，枢转构件在反射构件的相对另一侧更靠近反射构件的一侧接合，用于控制由移动单元驱动的反射构件的运动。

公开(公告)号：US08116618B2

公开(公告)日：2012-02-14

申请号：US12213823

申请日：2008-06-25

申请人： Akira Hayashida ,  Masaaki Ueno ,  Masakazu Shimada ,  Masashi Sugishita ,  Toshimitsu Miyata ,  Kimio Kitamura ,  Kenji Tanaka ,  Jyunichi Nishihara

发明人： Akira Hayashida ,  Masaaki Ueno ,  Masakazu Shimada ,  Masashi Sugishita ,  Toshimitsu Miyata ,  Kimio Kitamura ,  Kenji Tanaka ,  Jyunichi Nishihara

IPC分类号： A45D20/40 ,  A21B2/00

CPC分类号： H01L21/67109 ,  H01L21/67115

摘要： A heating apparatus comprises a wall for surrounding and defining a heating space, a heating element mounted on the inner side of the wall, reflecting members for reflecting the heat emitted from the heating element. Also, a moving unit joined to one end of each of the reflecting members for moving the reflecting members. Moreover, pivotal members joined to the reflecting members beside more their respective other side than one side of the reflecting members for controlling as pivots the movement of the reflecting member driven by the moving unit.

摘要翻译： 加热装置包括用于围绕和限定加热空间的壁，安装在壁的内侧上的加热元件，用于反射从加热元件发出的热的反射构件。 而且，移动单元连接到每个反射构件的一端以移动反射构件。 此外，枢转构件在反射构件的相对另一侧更靠近反射构件的一侧接合，用于控制由移动单元驱动的反射构件的运动。

公开(公告)号：US09184069B2

公开(公告)日：2015-11-10

申请号：US12213824

申请日：2008-06-25

申请人： Akira Hayashida ,  Masaaki Ueno ,  Masakazu Shimada ,  Masashi Sugishita ,  Toshimitsu Miyata ,  Kimio Kitamura ,  Kenji Tanaka ,  Jyunichi Nishihara

发明人： Akira Hayashida ,  Masaaki Ueno ,  Masakazu Shimada ,  Masashi Sugishita ,  Toshimitsu Miyata ,  Kimio Kitamura ,  Kenji Tanaka ,  Jyunichi Nishihara

IPC分类号： C23C16/50 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/67 ,  H01L21/66 ,  H01L21/673

CPC分类号： H01L21/67109 ,  H01L21/67248 ,  H01L21/67303 ,  H01L22/12 ,  Y10T29/41

摘要： A heating apparatus comprises a heating element, an inner shell for supporting the heating element, an outer shell disposed along the outer boundary of the inner shell, a cooling medium passage for conveying a cooling medium between the inner shell and the outer shell, a first opening provided in the inner shell, a second opening provided in the outer shell, and a partition arranged to extend from the first opening to the second opening for developing at least a space separated from the cooling medium passage and between the inner shell and the outer shell. The heating apparatus further comprises an insulator for shutting up a gap provided between the partition and the second opening.

公开(公告)号：US20090014435A1

公开(公告)日：2009-01-15

申请号：US12213824

申请日：2008-06-25

申请人： Akira Hayashida ,  Masaaki Ueno ,  Masakazu Shimada ,  Masashi Sugishita ,  Toshimitsu Miyata ,  Kimio Kitamura ,  Kenji Tanaka ,  Jyunichi Nishihara

发明人： Akira Hayashida ,  Masaaki Ueno ,  Masakazu Shimada ,  Masashi Sugishita ,  Toshimitsu Miyata ,  Kimio Kitamura ,  Kenji Tanaka ,  Jyunichi Nishihara

IPC分类号： H05B3/06 ,  H01L21/00 ,  H05B3/02

CPC分类号： H01L21/67109 ,  H01L21/67248 ,  H01L21/67303 ,  H01L22/12 ,  Y10T29/41

摘要： A heating apparatus comprises a heating element, an inner shell for supporting the heating element, an outer shell disposed along the outer boundary of the inner shell, a cooling medium passage for conveying a cooling medium between the inner shell and the outer shell, a first opening provided in the inner shell, a second opening provided in the outer shell, and a partition arranged to extend from the first opening to the second opening for developing at least a space separated from the cooling medium passage and between the inner shell and the outer shell. The heating apparatus further comprises an insulator for shutting up a gap provided between the partition and the second opening.

摘要翻译： 一种加热装置，包括加热元件，用于支撑加热元件的内壳，沿着内壳的外边界设置的外壳，用于在内壳和外壳之间输送冷却介质的冷却介质通道，第一 设置在所述内壳中的开口，设置在所述外壳中的第二开口和布置成从所述第一开口延伸到所述第二开口的隔板，用于至少展开与所述冷却介质通道分离的空间以及在所述内壳和所述外壳之间的至少一个空间 贝壳。 加热装置还包括用于关闭设置在隔板和第二开口之间的间隙的绝缘体。

公开(公告)号：US20090095422A1

公开(公告)日：2009-04-16

申请号：US12205075

申请日：2008-09-05

申请人： Masashi SUGISHITA ,  Masaaki Ueno ,  Akira Hayashida

发明人： Masashi SUGISHITA ,  Masaaki Ueno ,  Akira Hayashida

IPC分类号： C23F1/00 ,  B05C11/00

CPC分类号： H01L21/67248 ,  C23C16/4411 ,  C23C16/46 ,  C23C16/52 ,  C30B25/16 ,  F27B17/0025 ,  H01L21/67109

摘要： Provided are a semiconductor manufacturing apparatus and a substrate processing method that can reduce a temperature difference along the circumference of a substrate and continue substrate processing even when a temperature sensor becomes defective. The semiconductor manufacturing apparatus includes a reaction tube configured to process a wafer, a heater configured to heat the reaction tube, an exhaust pipe, a control unit configured to control a cooling gas exhaust device, the heater, and a pressure sensor that detects a pressure inside the exhaust pipe when cooling gas flows through the exhaust pipe. The control unit previously acquires an average value of second temperature detecting units that detect states of a peripheral part of a wafer, and a measure value of a first temperature detecting unit that detects a state of a center part of the wafer so as to control the heat and the cooling device based on the acquired values.

摘要翻译： 提供一种半导体制造装置和基板处理方法，其可以降低沿着基板的周边的温度差，并且即使当温度传感器变得有缺陷时也继续进行基板处理。 半导体制造装置包括：配置为处理晶片的反应管，构造成加热反应管的加热器，排气管，控制冷却气体排出装置的控制单元，加热器和检测压力的压力传感器 当冷却气体流过排气管时，在排气管内。 控制单元先前获取检测晶片的周边部分的状态的第二温度检测单元的平均值，以及检测晶片的中心部分的状态以控制晶片的状态的第一温度检测单元的测量值 热量和冷却装置基于获得的值。

公开(公告)号：US20080182345A1

公开(公告)日：2008-07-31

申请号：US12010274

申请日：2008-01-23

申请人： Masashi Sugishita ,  Masaaki Ueno ,  Akira Hayashida

发明人： Masashi Sugishita ,  Masaaki Ueno ,  Akira Hayashida

IPC分类号： H01L21/66 ,  B05C11/02

CPC分类号： H01L22/20 ,  H01L2924/0002 ,  Y10S438/905 ,  H01L2924/00

摘要： A semiconductor manufacturing apparatus and substrate processing method is provided with which the film formed on a substrate can be controlled in thickness and quality. The substrate processing method includes a step of acquiring a measurement value based on a first detecting section for detecting a state of a peripheral edge of a substrate and a measurement value based on a second detecting section for detecting a state of a center of the substrate and determining a first difference between the measurement value based on the first detecting section and the measurement value based on the second detecting section, comparing between a previously stored second difference between a measurement value concerning the first detecting section and a measurement value concerning the second detecting section with the first difference between the measurement value based on the first detecting section and the measurement value based on the second detecting section, calculating a correction value for a pressure in a cooling-gas passage provided between a process chamber for processing the substrate and a heating device depending upon the first difference when the first difference is different from the second difference, and correcting the pressure value based on the pressure correction value, anda step of processing the substrate by flowing a cooling gas through the cooling-gas passage by means of a cooling device while heating the process chamber by the heating device, and placing the heating device and the cooling device under control of a control section depending upon a pressure value corrected.

摘要翻译： 提供了一种半导体制造装置和基板处理方法，其可以控制在基板上形成的膜的厚度和质量。 基板处理方法包括基于用于检测基板的周缘的状态的第一检测部和基于用于检测基板的中心的状态的第二检测部的测量值来获取测量值的步骤，以及 基于第二检测部分确定基于第一检测部分的测量值和测量值之间的第一差异，将先前存储的关于第一检测部分的测量值和与第二检测部分相关的测量值之间的第二差值进行比较 基于第一检测部分的测量值和基于第二检测部分的测量值之间的第一差异，计算在处理基板的处理室和加热之间设置的冷却气体通道中的压力的​​校正值 设备取决于fi的第一个差异 第一差异与第二差异不同，并且基于压力校正值校正压力值，以及通过借助于冷却装置使冷却气体流过冷却气体通道而加热基板的步骤，同时加热处理室 通过加热装置，并且根据校正的压力值将加热装置和冷却装置放置在控制部分的控制下。

公开(公告)号：US07727780B2

公开(公告)日：2010-06-01

申请号：US12010274

申请日：2008-01-23

申请人： Masashi Sugishita ,  Masaaki Ueno ,  Akira Hayashida

发明人： Masashi Sugishita ,  Masaaki Ueno ,  Akira Hayashida

IPC分类号： G01R31/26 ,  H01L21/66

CPC分类号： H01L22/20 ,  H01L2924/0002 ,  Y10S438/905 ,  H01L2924/00

摘要： A semiconductor manufacturing apparatus and substrate processing method includes a step of acquiring a measurement value based on a first detecting and a second detecting section and determining a first difference of measurement values between the first detecting section and the second detecting section, comparing between a previously stored second difference between measurement values concerning the first detecting section and the second detecting section, calculating a correction value for a pressure in a cooling-gas passage provided between a process chamber and a heating device depending upon the first difference when the first difference is different from the second difference, and correcting the pressure value based on the pressure correction value, and a step of processing the substrate by flowing a cooling gas through the cooling-gas passage while heating the process chamber, and placing the heating device and the cooling device under a control section depending upon a pressure value corrected.

摘要翻译： 半导体制造装置和基板处理方法包括以下步骤：基于第一检测和第二检测部分获取测量值，并确定第一检测部分和第二检测部分之间的测量值的第一差异， 与第一检测部分和第二检测部分相关的测量值之间的第二差异，当第一差异不同时，根据第一差异来计算设置在处理室和加热装置之间的冷却气体通道中的压力的​​校正值 第二差异，并且基于压力校正值校正压力值，以及通过在加热处理室的同时使冷却气体流过冷却气体通道来处理基板的步骤，并且将加热装置和冷却装置放置在 取决于压力的控制部分 价值更正。

公开(公告)号：US08501599B2

公开(公告)日：2013-08-06

申请号：US12087479

申请日：2007-02-21

申请人： Masaaki Ueno ,  Masakazu Shimada ,  Takeo Hanashima ,  Haruo Morikawa ,  Akira Hayashida

发明人： Masaaki Ueno ,  Masakazu Shimada ,  Takeo Hanashima ,  Haruo Morikawa ,  Akira Hayashida

IPC分类号： H01L21/20 ,  H01L21/36 ,  H05B1/02 ,  C23C16/00

CPC分类号： H01L21/67109 ,  C23C16/46 ,  H01L21/67248

摘要： A substrate processing apparatus has: a process chamber in which a substrate is processed; a heating device that optically heats the substrate accommodated in the process chamber from an outer periphery side of the substrate; a cooling device that cools the outer periphery side of the substrate by flowing a fluid in a vicinity of an outer periphery of the substrate optically heated by the heating device; a temperature detection portion that detects a temperature inside the process chamber; and a heating control portion that controls the heating device and the cooling device in such a manner so as to provide a temperature difference between a center portion of the substrate and an end portion of the substrate while maintaining a temperature at the center portion at a pre-determined temperature according to the temperature detected by the temperature detection portion.

摘要翻译： 基板处理装置具有：处理基板的处理室; 加热装置，其从基板的外周侧光学加热容纳在处理室中的基板; 冷却装置，其通过使由加热装置光学加热的基板的外周附近的流体流动来冷却基板的外周侧; 温度检测部，其检测处理室内的温度; 以及加热控制部，其以这样的方式控制加热装置和冷却装置，以在基板的中心部分和基板的端部之间提供温度差，同时将中心部分处的温度保持在预先 根据由温度检测部分检测的温度确定温度。