公开(公告)号：US07488683B2

公开(公告)日：2009-02-10

申请号：US10550897

申请日：2004-03-23

申请人： Akira Kobayashi ,  Tsunehisa Namiki ,  Hiroko Hosono ,  Hideo Kurashima ,  Hajime Inagaki ,  Toshihide Ieki

发明人： Akira Kobayashi ,  Tsunehisa Namiki ,  Hiroko Hosono ,  Hideo Kurashima ,  Hajime Inagaki ,  Toshihide Ieki

IPC分类号： H01L21/44 ,  C23C16/00

CPC分类号： C23C16/045 ,  B05D1/62 ,  B05D2201/00 ,  B05D2490/50 ,  C23C16/0272 ,  C23C16/401 ,  C23C16/45523

摘要： A method of forming a vapor deposited film of a silicon oxide on the surface of a substrate by holding the substrate to be treated in a plasma-treating chamber, and effecting the treatment with a chemical plasma by feeding an organosilicon compound and an oxidizing gas into the treating chamber, wherein the rate of feeding the oxidizing gas is varied while maintaining constant the rate of feeding the organosilicon compound gas into the plasma-treating chamber during the formation of the vapor deposited film. A chemical vapor deposited film is formed featuring excellent adhesiveness, softness, flexibility, oxygen-barrier property and water-barrier property.

摘要翻译： 在等离子体处理室中保持待处理基板，在基板表面形成氧化硅蒸镀膜的方法，通过将有机硅化合物和氧化气体进料进入化学等离子体进行处理 处理室，其中在形成气相沉积膜期间，使氧化气体的供给速率变化，同时保持将有机硅化合物气体进料到等离子体处理室中的速率恒定。 形成了具有优异的粘合性，柔软性，柔韧性，阻氧性和防水性的化学气相沉积膜。

公开(公告)号：US20060264044A1

公开(公告)日：2006-11-23

申请号：US10550897

申请日：2004-03-23

申请人： Akira Kobayashi ,  Tsunehisa Namiki ,  Hiroko Hosono ,  Hideo Kurashima ,  Hajime Inagaki ,  Toshihide Ieki

发明人： Akira Kobayashi ,  Tsunehisa Namiki ,  Hiroko Hosono ,  Hideo Kurashima ,  Hajime Inagaki ,  Toshihide Ieki

IPC分类号： H01L21/44

CPC分类号： C23C16/045 ,  B05D1/62 ,  B05D2201/00 ,  B05D2490/50 ,  C23C16/0272 ,  C23C16/401 ,  C23C16/45523

摘要： A method of forming a vapor deposited film of a silicon oxide on the surface of a substrate by holding the substrate to be treated in a plasma-treating chamber, and effecting the treatment with a chemical plasma by feeding an organosilicon compound and an oxidizing gas into the treating chamber, wherein the rate of feeding the oxidizing gas is varied while maintaining constant the rate of feeding the organosilicon compound gas into the plasma-treating chamber during the formation of the vapor deposited film. A chemical vapor deposited film is formed featuring excellent adhesiveness, softness, flexibility, oxygen-barrier property and water-barrier property.

摘要翻译： 在等离子体处理室中保持待处理基板，在基板表面形成氧化硅蒸镀膜的方法，通过将有机硅化合物和氧化气体进料进入化学等离子体进行处理 处理室，其中在形成气相沉积膜期间，使氧化气体的供给速率变化，同时保持将有机硅化合物气体进料到等离子体处理室中的速率恒定。 形成了具有优异的粘合性，柔软性，柔韧性，阻氧性和防水性的化学气相沉积膜。

公开(公告)号：US06818310B2

公开(公告)日：2004-11-16

申请号：US10332135

申请日：2003-01-06

申请人： Tsunehisa Namiki ,  Toshihide Ieki ,  Hideo Kurashima ,  Hajime Inagaki ,  Akira Kobayashi ,  Koji Yamada ,  Miwako Tanikawa

发明人： Tsunehisa Namiki ,  Toshihide Ieki ,  Hideo Kurashima ,  Hajime Inagaki ,  Akira Kobayashi ,  Koji Yamada ,  Miwako Tanikawa

IPC分类号： B32B2728

CPC分类号： C23C16/0272 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  Y10T428/265 ,  Y10T428/31667

摘要： A silicon oxide film is formed on the surfaces of a plastic substrate and contains methyl groups and methylene groups in a portion near the interface to the plastic substrate. The silicon oxide film exhibits not only excellent adhesion to the plastic substrate, softness and flexibility but also exhibits excellent gas shut-off property (gas barrier property), makes it possible to achieve excellent gas-shutoff property with a smaller film thickness than that of the conventional films, and can be mass-produced favorably.

摘要翻译： 在塑料基板的表面上形成氧化硅膜，并且在与塑料基板的界面附近的部分含有甲基和亚甲基。 氧化硅膜不仅具有对塑料基材的优异的粘附性，柔软性和柔软性，而且还表现出优异的气体截断性（阻气性），可以实现比膜厚小的膜厚度优异的气体截止性能 常规的膜，并且可以有利地批量生产。

公开(公告)号：US07847209B2

公开(公告)日：2010-12-07

申请号：US10530357

申请日：2003-10-09

申请人： Tsunehisa Namiki ,  Toshihide Ieki ,  Hideo Kurashima ,  Hajime Inagaki ,  Akira Kobayashi ,  Koji Yamada

发明人： Tsunehisa Namiki ,  Toshihide Ieki ,  Hideo Kurashima ,  Hajime Inagaki ,  Akira Kobayashi ,  Koji Yamada

IPC分类号： B23K9/00 ,  B23K9/02 ,  B23B9/04

CPC分类号： C23C16/515 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/40 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32311

摘要： A method of forming a metal oxide film by the plasma CVD method and which includes reacting chiefly an organometal by a glow discharge in a low output region and, then, reacting the organometal with an oxidizing gas by the glow discharge in a high-output region to form a metal oxide film on the surface of a plastic substrate via an organic layer. This method forms a thin film having excellent adhesiveness, softness and flexibility on the surface of a plastic substrate relying on the plasma CVD method.

摘要翻译： 通过等离子体CVD法形成金属氧化物膜的方法，其特征在于，在低输出区域中通过辉光放电主要使有机金属反应，然后通过高输出区域的辉光放电使有机金属与氧化性气体反应 通过有机层在塑料基板的表面上形成金属氧化物膜。 该方法根据等离子体CVD法在塑料基板的表面上形成具有优异的粘合性，柔软性和柔软性的薄膜。

公开(公告)号：US20060138099A1

公开(公告)日：2006-06-29

申请号：US10530357

申请日：2003-10-09

申请人： Tsunehisa Namiki ,  Toshihide Ieki ,  Hideo Kurashima ,  Hajime Inagaki ,  Akira Kobayashi ,  Koji Yamada

发明人： Tsunehisa Namiki ,  Toshihide Ieki ,  Hideo Kurashima ,  Hajime Inagaki ,  Akira Kobayashi ,  Koji Yamada

IPC分类号： B23K9/00 ,  B23K9/02

CPC分类号： C23C16/515 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/40 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32311

摘要： A method of forming a metal oxide film by the plasma CVD method and comprising reacting chiefly an organometal by a glow discharge in a low output region and, then, reacting the organometal with an oxidizing gas by the glow discharge in a high-output region to form a metal oxide film on the surface of a plastic substrate via an organic layer. This method forms a thin film having excellent adhesiveness, softness and flexibility on the surface of a plastic substrate relying on the plasma CVD method.

摘要翻译： 通过等离子体CVD法形成金属氧化物膜的方法，其特征在于，在低输出区域中通过辉光放电主要使有机金属反应，然后通过高输出区域的辉光放电使有机金属与氧化性气体反应， 通过有机层在塑料基板的表面上形成金属氧化物膜。 该方法根据等离子体CVD法在塑料基板的表面上形成具有优异的粘合性，柔软性和柔软性的薄膜。

公开(公告)号：US06582778B2

公开(公告)日：2003-06-24

申请号：US10023828

申请日：2001-12-21

申请人： Tsunehisa Namiki ,  Toshihide Ieki ,  Akira Kobayashi ,  Koji Yamada ,  Hideo Kurashima

发明人： Tsunehisa Namiki ,  Toshihide Ieki ,  Akira Kobayashi ,  Koji Yamada ,  Hideo Kurashima

IPC分类号： H05H130

CPC分类号： H01J37/32192 ,  C23C16/045 ,  C23C16/26 ,  C23C16/511

摘要： Disclosed is a method of treatment with a microwave plasma by maintaining a reduced pressure in a plasma-treating chamber for treatment with a plasma in which a substrate that is to be treated with a microwave plasma is contained, introducing a treating gas into the plasma-treating chamber and introducing microwaves into the plasma-treating chamber, wherein a metallic antenna is disposed in the plasma-treating chamber. The plasma is generated within a very short period of time maintaining stability after the microwaves are introduced into the plasma-treating chamber, and the treatment is accomplished maintaining stability.

公开(公告)号：US20090250444A1

公开(公告)日：2009-10-08

申请号：US12457497

申请日：2009-06-12

申请人： Akira Kobayashi ,  Kouji Yamada ,  Hideo Kurashima ,  Tsunehisa Namiki ,  Takeshi Aihara ,  Yasunori Onozawa

发明人： Akira Kobayashi ,  Kouji Yamada ,  Hideo Kurashima ,  Tsunehisa Namiki ,  Takeshi Aihara ,  Yasunori Onozawa

IPC分类号： B23K9/02

CPC分类号： H01J37/3244 ,  C23C16/045 ,  C23C16/45568 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H05H1/46 ,  H05H2001/463

摘要： A microwave plasma processing device includes a fixing device for fixing a substrate as a processing target on a central axis in a plasma processing chamber, a exhausting device for depressurizing an inside and outside of the substrate, a metal processing gas supply member which is present in the substrate and forms a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to perform processing. A microwave sealing member is provided at a substrate-holding portion of the fixing device, and a connection position of the microwave introducing device is located at a node of an electric field intensity distribution formed on the processing gas supply member by introducing the microwave.

摘要翻译： 微波等离子体处理装置包括：固定装置，用于将作为加工对象的基板固定在等离子体处理室的中心轴上;排气装置，用于对基板的内部和外部进行减压;金属加工气体供应部件， 基板并与等离子体处理室一起形成可折入的圆柱形谐振系统，以及微波引入装置，用于将微波引入等离子体处理室以进行处理。 微波密封件设置在定影装置的基板保持部分处，并且微波引入装置的连接位置位于通过引入微波而形成在处理气体供给构件上的电场强度分布的节点处。

公开(公告)号：US07582845B2

公开(公告)日：2009-09-01

申请号：US10546283

申请日：2004-03-11

申请人： Akira Kobayashi ,  Kouji Yamada ,  Hideo Kurashima ,  Tsunehisa Namiki ,  Takeshi Aihara ,  Yasunori Onozawa

发明人： Akira Kobayashi ,  Kouji Yamada ,  Hideo Kurashima ,  Tsunehisa Namiki ,  Takeshi Aihara ,  Yasunori Onozawa

IPC分类号： B23K10/00

CPC分类号： H01J37/3244 ,  C23C16/045 ,  C23C16/45568 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H05H1/46 ,  H05H2001/463

摘要： A microwave plasma processing device can form a uniform thin film on a substrate to be processed. The microwave plasma processing device includes a fixing device for fixing a substrate to be processed onto the center axis in a plasma processing chamber, an exhaust device for depressurizing the inside and outside of the substrate, a metal processing gas supply member present in the substrate and forming a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to process it. A microwave sealing member is provided in a specified position of the substrate-holding portion of the fixing device, and the connection position of the microwave introducing device is set to a specified weak-field position out of a field intensity distribution formed in the interior of the plasma processing chamber.

摘要翻译： 微波等离子体处理装置能够在待处理的基板上形成均匀的薄膜。 微波等离子体处理装置包括用于将待处理基板固定在等离子体处理室中的中心轴上的定影装置，用于对基板内部和外部进行减压的排气装置，存在于基板中的金属加工气体供给部件和 与等离子体处理室一起形成可折入的圆柱形谐振系统，以及用于将微波引入等离子体处理室以进行处理的微波引入装置。 在定影装置的基板保持部的特定位置设置有微波密封构件，并且微波导入装置的连接位置被设定在从内部形成的场强分布的规定的弱场位置 等离子体处理室。

公开(公告)号：US20070000879A1

公开(公告)日：2007-01-04

申请号：US10550509

申请日：2004-04-12

申请人： Hideo Kurashima ,  Akira Kobayashi ,  Kouji Yamada ,  Tsunehisa Namiki

发明人： Hideo Kurashima ,  Akira Kobayashi ,  Kouji Yamada ,  Tsunehisa Namiki

IPC分类号： B23K9/02

CPC分类号： H01J37/32284 ,  C23C16/045 ,  C23C16/511 ,  H01J37/32192 ,  H05B6/80

摘要： A microwave plasma processing method is provided which enables a uniform thin film layer to be formed on a surface to be processed and which enables a short time processing. In the microwave plasma processing method, microwaves are introduced into a plasma processing chamber 1, and a processing gas is transformed into plasma to form a thin film layer on a base substance 13 disposed in the plasma processing chamber 13, and the method comprises: fixing the base substance 13 coaxially with a central axis of the plasma processing chamber 1; setting a standing wave mode of the microwaves in the plasma processing chamber to a TE mode or a TEM mode from a mouth portion 131 to a body portion 133 of the base substance; and setting a mode having both the TE mode and a TM mode in a bottom portion 132 of the base substance.

公开(公告)号：US08680424B2

公开(公告)日：2014-03-25

申请号：US12457497

申请日：2009-06-12

申请人： Akira Kobayashi ,  Kouji Yamada ,  Hideo Kurashima ,  Tsunehisa Namiki ,  Takeshi Aihara ,  Yasunori Onozawa

发明人： Akira Kobayashi ,  Kouji Yamada ,  Hideo Kurashima ,  Tsunehisa Namiki ,  Takeshi Aihara ,  Yasunori Onozawa

IPC分类号： B23K10/00

CPC分类号： H01J37/3244 ,  C23C16/045 ,  C23C16/45568 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H05H1/46 ,  H05H2001/463

摘要： A microwave plasma processing device includes a fixing device for fixing a substrate as a processing target on a central axis in a plasma processing chamber, a exhausting device for depressurizing an inside and outside of the substrate, a metal processing gas supply member which is present in the substrate and forms a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to perform processing. A microwave sealing member is provided at a substrate-holding portion of the fixing device, and a connection position of the microwave introducing device is located at a node of an electric field intensity distribution formed on the processing gas supply member by introducing the microwave.

摘要翻译： 微波等离子体处理装置包括：固定装置，用于将作为加工对象的基板固定在等离子体处理室的中心轴上;排气装置，用于对基板的内部和外部进行减压;金属加工气体供应部件， 基板并与等离子体处理室一起形成可折入的圆柱形谐振系统，以及微波引入装置，用于将微波引入等离子体处理室以进行处理。 微波密封件设置在定影装置的基板保持部分处，并且微波引入装置的连接位置位于通过引入微波而形成在处理气体供给构件上的电场强度分布的节点处。