公开(公告)号：US20090202762A1

公开(公告)日：2009-08-13

申请号：US12375140

申请日：2007-07-26

申请人： Kouji Yamada ,  Toshihide Ieki ,  Takeshi Aihara

发明人： Kouji Yamada ,  Toshihide Ieki ,  Takeshi Aihara

IPC分类号： B32B1/02 ,  B32B9/04 ,  C23C16/513

CPC分类号： B65D23/0821 ,  C23C16/0272 ,  C23C16/401 ,  Y02W90/13 ,  Y10T428/1352 ,  Y10T428/31663

摘要： This invention relates to a plastic formed article having a vapor-deposited film on a surface of a plastic substrate by a plasma CVD method, the vapor-deposited film including an organosilicon vapor-deposited layer on the surface of the plastic substrate 1 and containing no oxygen, and a silicon oxide vapor-deposited layer on the organosilicon vapor-deposited layer. The plastic formed article not only features favorable gas-barrier property but also effectively prevents the generation of offensive odor at the time of vapor deposition and, further, offers excellent flavor-retaining property.

摘要翻译： 本发明涉及一种通过等离子体CVD法在塑料基板的表面上具有气相沉积膜的塑料成型体，该蒸镀膜包括在塑料基板1的表面上的有机硅气相沉积层， 氧和在有机硅气相沉积层上的氧化硅气相沉积层。 塑料成型体不仅具有良好的气体阻隔性，而且还有效地防止气相沉积时产生异味，进一步提供优异的保鲜性。

公开(公告)号：US20060172085A1

公开(公告)日：2006-08-03

申请号：US10548675

申请日：2004-03-05

申请人： Akira Kobayashi ,  Koji Yamada ,  Takeshi Aihara ,  Hideo Kurashima

发明人： Akira Kobayashi ,  Koji Yamada ,  Takeshi Aihara ,  Hideo Kurashima

IPC分类号： H05H1/24 ,  H01S3/00

CPC分类号： H01J37/32192 ,  C23C16/045 ,  C23C16/463 ,  C23C16/511 ,  H01J37/32082 ,  H01J37/3244

摘要： A method of treating plastic containers with a chemical plasma by forming a film by CVD on the plastic containers by generating a glow discharge by feeding a gas for plasma treatment and energy such as microwaves for plasmatization into a plasma-treating chamber, wherein the plastic containers are cooled. This method effectively suppresses the plastic containers from being deformed, is capable of forming the film by CVD on the inner surfaces of the plastic containers consecutively for extended periods of time, and greatly enhances the productivity.

摘要翻译： 一种用化学等离子体处理塑料容器的方法，其通过在塑料容器上形成膜，通过将等离子体处理气体和诸如微波等能量等能量的能量供给到等离子体处理室中产生辉光放电，其中塑料容器 被冷却。 该方法有效地抑制塑料容器变形，能够通过CVD在塑料容器的内表面上连续长时间地形成膜，并且大大提高了生产率。

公开(公告)号：US08680424B2

公开(公告)日：2014-03-25

申请号：US12457497

申请日：2009-06-12

申请人： Akira Kobayashi ,  Kouji Yamada ,  Hideo Kurashima ,  Tsunehisa Namiki ,  Takeshi Aihara ,  Yasunori Onozawa

发明人： Akira Kobayashi ,  Kouji Yamada ,  Hideo Kurashima ,  Tsunehisa Namiki ,  Takeshi Aihara ,  Yasunori Onozawa

IPC分类号： B23K10/00

CPC分类号： H01J37/3244 ,  C23C16/045 ,  C23C16/45568 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H05H1/46 ,  H05H2001/463

摘要： A microwave plasma processing device includes a fixing device for fixing a substrate as a processing target on a central axis in a plasma processing chamber, a exhausting device for depressurizing an inside and outside of the substrate, a metal processing gas supply member which is present in the substrate and forms a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to perform processing. A microwave sealing member is provided at a substrate-holding portion of the fixing device, and a connection position of the microwave introducing device is located at a node of an electric field intensity distribution formed on the processing gas supply member by introducing the microwave.

摘要翻译： 微波等离子体处理装置包括：固定装置，用于将作为加工对象的基板固定在等离子体处理室的中心轴上;排气装置，用于对基板的内部和外部进行减压;金属加工气体供应部件， 基板并与等离子体处理室一起形成可折入的圆柱形谐振系统，以及微波引入装置，用于将微波引入等离子体处理室以进行处理。 微波密封件设置在定影装置的基板保持部分处，并且微波引入装置的连接位置位于通过引入微波而形成在处理气体供给构件上的电场强度分布的节点处。

公开(公告)号：US20060289401A1

公开(公告)日：2006-12-28

申请号：US10546283

申请日：2004-03-11

申请人： Akira Kobayashi ,  Kouji Yamada ,  Hideo Kurashima ,  Tsunehisa Namiki ,  Takeshi Aihara ,  Yasunori Onozawa

发明人： Akira Kobayashi ,  Kouji Yamada ,  Hideo Kurashima ,  Tsunehisa Namiki ,  Takeshi Aihara ,  Yasunori Onozawa

IPC分类号： B23K9/02

CPC分类号： H01J37/3244 ,  C23C16/045 ,  C23C16/45568 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H05H1/46 ,  H05H2001/463

摘要： A microwave plasma processing device and a gas supply member capable of forming a uniform thin film on a substrate to be processed. The microwave plasma processing device comprises fixing means of fixing a substrate to be processed onto the center axis in a plasma processing chamber, exhaust means of depressurizing the inside and outside of the substrate, a metal processing gas supply member present in the substrate and forming a reentrant cylindrical resonating system along with the plasma processing chamber, and microwave introducing means of introducing a microwave into the plasma processing chamber to process it, wherein a microwave sealing member is provided in a specified position of the substrate-holding portion of the fixing means, and the connection position of the microwave introducing means is set to a specified weak-field position out of a field intensity distribution formed in the interior of the plasma processing chamber.

摘要翻译： 微波等离子体处理装置和能够在待加工基板上形成均匀薄膜的气体供给部件。 微波等离子体处理装置包括固定装置，将待处理基板固定在等离子体处理室中的中心轴上，对基板内部和外部进行减压的排气装置，存在于基板中的金属加工气体供应部件， 和等离子体处理室的可重入圆柱形谐振系统，以及将微波引入等离子体处理室进行处理的微波引入装置，其中微波密封构件设置在固定装置的基板保持部分的指定位置， 并且微波引入装置的连接位置被设置在形成在等离子体处理室内部的场强分布之外的指定的弱磁场位置。

公开(公告)号：US5063740A

公开(公告)日：1991-11-12

申请号：US406495

申请日：1989-09-13

申请人： Takeshi Aihara

发明人： Takeshi Aihara

IPC分类号： F15B9/04 ,  G05B19/46 ,  G05D3/00 ,  H02P29/00

CPC分类号： G05B19/46 ,  F15B2211/20561 ,  F15B2211/6336 ,  G05B2219/41029 ,  G05B2219/41307

摘要： The position of a controlled system is regulated with a hydraulic actuator, which is directly linked to a hydraulic pump. The pump is driven in either direction by an electric motor, which is controlled by the output of rotatory direction and driving power generated from a controller based on a desired position and the feedback input of the actual position of the controlled system and the rotatory speed of the electric motor. The controller further includes a gain-variable amplifier for amplifying a deviation of the controlled value from a desired value with a gain characteristic curve of a shape appropriate to the controlled system, attaining a stable and well follow-up control of position.

摘要翻译： 控制系统的位置由液压执行机构调节，液压执行器与液压泵直接连接。 泵通过电动机驱动，该电动机基于期望的位置和控制系统的实际位置的反馈输入和控制系统的实际位置的反馈输入由旋转方向的输出和从控制器产生的驱动力控制， 电动机。 该控制器还包括一个增益可变放大器，用增益特性曲线将控制值与期望值的偏差放大，该增益特性曲线适合于受控系统，达到稳定且良好的位置控制。

公开(公告)号：US20090250444A1

公开(公告)日：2009-10-08

申请号：US12457497

申请日：2009-06-12

申请人： Akira Kobayashi ,  Kouji Yamada ,  Hideo Kurashima ,  Tsunehisa Namiki ,  Takeshi Aihara ,  Yasunori Onozawa

发明人： Akira Kobayashi ,  Kouji Yamada ,  Hideo Kurashima ,  Tsunehisa Namiki ,  Takeshi Aihara ,  Yasunori Onozawa

IPC分类号： B23K9/02

CPC分类号： H01J37/3244 ,  C23C16/045 ,  C23C16/45568 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H05H1/46 ,  H05H2001/463

摘要： A microwave plasma processing device includes a fixing device for fixing a substrate as a processing target on a central axis in a plasma processing chamber, a exhausting device for depressurizing an inside and outside of the substrate, a metal processing gas supply member which is present in the substrate and forms a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to perform processing. A microwave sealing member is provided at a substrate-holding portion of the fixing device, and a connection position of the microwave introducing device is located at a node of an electric field intensity distribution formed on the processing gas supply member by introducing the microwave.

摘要翻译： 微波等离子体处理装置包括：固定装置，用于将作为加工对象的基板固定在等离子体处理室的中心轴上;排气装置，用于对基板的内部和外部进行减压;金属加工气体供应部件， 基板并与等离子体处理室一起形成可折入的圆柱形谐振系统，以及微波引入装置，用于将微波引入等离子体处理室以进行处理。 微波密封件设置在定影装置的基板保持部分处，并且微波引入装置的连接位置位于通过引入微波而形成在处理气体供给构件上的电场强度分布的节点处。

公开(公告)号：US07582845B2

公开(公告)日：2009-09-01

申请号：US10546283

申请日：2004-03-11

申请人： Akira Kobayashi ,  Kouji Yamada ,  Hideo Kurashima ,  Tsunehisa Namiki ,  Takeshi Aihara ,  Yasunori Onozawa

发明人： Akira Kobayashi ,  Kouji Yamada ,  Hideo Kurashima ,  Tsunehisa Namiki ,  Takeshi Aihara ,  Yasunori Onozawa

IPC分类号： B23K10/00

CPC分类号： H01J37/3244 ,  C23C16/045 ,  C23C16/45568 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H05H1/46 ,  H05H2001/463

摘要： A microwave plasma processing device can form a uniform thin film on a substrate to be processed. The microwave plasma processing device includes a fixing device for fixing a substrate to be processed onto the center axis in a plasma processing chamber, an exhaust device for depressurizing the inside and outside of the substrate, a metal processing gas supply member present in the substrate and forming a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to process it. A microwave sealing member is provided in a specified position of the substrate-holding portion of the fixing device, and the connection position of the microwave introducing device is set to a specified weak-field position out of a field intensity distribution formed in the interior of the plasma processing chamber.

摘要翻译： 微波等离子体处理装置能够在待处理的基板上形成均匀的薄膜。 微波等离子体处理装置包括用于将待处理基板固定在等离子体处理室中的中心轴上的定影装置，用于对基板内部和外部进行减压的排气装置，存在于基板中的金属加工气体供给部件和 与等离子体处理室一起形成可折入的圆柱形谐振系统，以及用于将微波引入等离子体处理室以进行处理的微波引入装置。 在定影装置的基板保持部的特定位置设置有微波密封构件，并且微波导入装置的连接位置被设定在从内部形成的场强分布的规定的弱场位置 等离子体处理室。

公开(公告)号：US20090018161A1

公开(公告)日：2009-01-15

申请号：US12114125

申请日：2008-05-02

申请人： Tatsuro Tanaka ,  Hisayuki Uneyama ,  Shinichi Fujita ,  Saori Ogawa ,  Yusuke Amino ,  Seiji Shiraishi ,  Koichi Fujita ,  Tatsuhiro Yamada ,  Takashi Yamamoto ,  Takeshi Aihara ,  Manabu Suzuki

发明人： Tatsuro Tanaka ,  Hisayuki Uneyama ,  Shinichi Fujita ,  Saori Ogawa ,  Yusuke Amino ,  Seiji Shiraishi ,  Koichi Fujita ,  Tatsuhiro Yamada ,  Takashi Yamamoto ,  Takeshi Aihara ,  Manabu Suzuki

IPC分类号： A61K31/47 ,  A61K31/16 ,  A61K31/164 ,  A61K31/343 ,  A61K31/4439 ,  G01N33/53 ,  A61P1/00 ,  C12Q1/02 ,  A61K31/221 ,  A61K31/357 ,  A61K31/44

CPC分类号： A61K31/36 ,  A23L33/10 ,  A61K31/165 ,  A61K31/166 ,  A61K31/343

摘要： The present invention provides a more effective gastrointestinal function promoter. The present invention also provides a method for the prophylaxis or improvement of functional gastrointestinal disorders, a method for appetite regulation and the like. The present invention also provides a method for screening for a substance capable of promoting a gastrointestinal function. The present invention provides a gastrointestinal function promoter containing a T1R agonist as an active ingredient and a method for the prophylaxis or improvement of functional gastrointestinal disorders, a method for appetite regulation and the like by administering a T1R agonist. The present invention also provides a method of screening for a substance capable of promoting a gastrointestinal function which method uses a cell expressing T1R receptor.

摘要翻译： 本发明提供了更有效的胃肠功能促进剂。 本发明还提供了预防或改善功能性胃肠道疾病的方法，食欲调节方法等。 本发明还提供了筛选能够促进胃肠功能的物质的方法。 本发明提供了含有T1R激动剂作为活性成分的胃肠功能促进剂和通过施用T1R激动剂来预防或改善功能性胃肠道疾病的方法，食欲调节方法等。 本发明还提供一种筛选能够促进胃肠功能的方法，该方法使用表达T1R受体的细胞。