公开(公告)号：US08003161B2

公开(公告)日：2011-08-23

申请号：US12101057

申请日：2008-04-10

申请人： Akira Kuriki ,  Hironobu Kazama ,  Toshinao Shinbo ,  Koji Sumi

发明人： Akira Kuriki ,  Hironobu Kazama ,  Toshinao Shinbo ,  Koji Sumi

IPC分类号： B05D5/12

CPC分类号： B41J2/161 ,  B41J2/1628 ,  B41J2/164 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1245 ,  C23C18/1254 ,  C23C18/1283 ,  H01L41/1876 ,  H01L41/318 ,  Y10T29/42

摘要： A method of manufacturing a dielectric film includes a coating step of coating sol made of an organic metal compound and forming a dielectric precursor film, a drying step of drying the dielectric precursor film, a degreasing step of degreasing the dielectric precursor film, and a baking step of baking the dielectric precursor film to form a dielectric film. The drying step includes a first drying step of drying the dielectric precursor film by heating the dielectric precursor film to a temperature lower than a boiling point of a solvent which is a main solvent of the sol and then holding the dielectric precursor film at the temperature for a predetermined period of time, and a second drying step of drying the dielectric precursor film further by reheating the dielectric precursor film and then holding the dielectric precursor film at the temperature for a predetermined period of time.

摘要翻译： 制造电介质膜的方法包括：涂覆由有机金属化合物制成的溶胶并形成电介质前体膜的涂覆步骤，干燥电介质前体膜的干燥步骤，使电介质前体膜脱脂的脱脂步骤和烘烤 烘烤电介质前体膜以形成电介质膜的步骤。 干燥步骤包括：第一干燥步骤，通过将电介质前体膜加热到低于作为溶胶的主要溶剂的溶剂的沸点的温度，然后将电介质前体膜保持在温度为 以及第二干燥步骤，通过再次加热电介质前体膜，然后将电介质前体膜保持在该温度下进一步干燥电介质前体膜一段预定时间。

公开(公告)号：US20050208208A1

公开(公告)日：2005-09-22

申请号：US10998195

申请日：2004-11-29

申请人： Akira Kuriki ,  Hironobu Kazama ,  Toshinao Shinbo ,  Koji Sumi

发明人： Akira Kuriki ,  Hironobu Kazama ,  Toshinao Shinbo ,  Koji Sumi

IPC分类号： H01L21/316 ,  B05D5/12 ,  B41J2/14 ,  B41J2/16 ,  C23C18/12 ,  H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/318 ,  H01L41/39 ,  H01L41/43

CPC分类号： B41J2/161 ,  B41J2/1628 ,  B41J2/164 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1245 ,  C23C18/1254 ,  C23C18/1283 ,  H01L41/1876 ,  H01L41/318 ,  Y10T29/42

摘要： A method of manufacturing a dielectric film includes a coating step of coating sol made of an organic metal compound and forming a dielectric precursor film, a drying step of drying the dielectric precursor film, a degreasing step of degreasing the dielectric precursor film, and a baking step of baking the dielectric precursor film to form a dielectric film. The drying step includes a first drying step of drying the dielectric precursor film by heating the dielectric precursor film to a temperature lower than a boiling point of a solvent which is a main solvent of the sol and then holding the dielectric precursor film at the temperature for a predetermined period of time, and a second drying step of drying the dielectric precursor film further by reheating the dielectric precursor film and then holding the dielectric precursor film at the temperature for a predetermined period of time.

摘要翻译： 制造电介质膜的方法包括：涂覆由有机金属化合物制成的溶胶并形成电介质前体膜的涂覆步骤，干燥电介质前体膜的干燥步骤，使电介质前体膜脱脂的脱脂步骤和烘烤 烘烤电介质前体膜以形成电介质膜的步骤。 干燥步骤包括：第一干燥步骤，通过将电介质前体膜加热到低于作为溶胶的主要溶剂的溶剂的沸点的温度，然后将电介质前体膜保持在温度为 以及第二干燥步骤，通过再次加热电介质前体膜，然后将电介质前体膜保持在该温度下进一步干燥电介质前体膜一段预定时间。

公开(公告)号：US20080199599A1

公开(公告)日：2008-08-21

申请号：US12101057

申请日：2008-04-10

申请人： Akira Kuriki ,  Hironobu Kazama ,  Toshinao Shinbo ,  Koji Sumi

发明人： Akira Kuriki ,  Hironobu Kazama ,  Toshinao Shinbo ,  Koji Sumi

IPC分类号： B05D5/12

CPC分类号： B41J2/161 ,  B41J2/1628 ,  B41J2/164 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1245 ,  C23C18/1254 ,  C23C18/1283 ,  H01L41/1876 ,  H01L41/318 ,  Y10T29/42

摘要： A method of manufacturing a dielectric film includes a coating step of coating sol made of an organic metal compound and forming a dielectric precursor film, a drying step of drying the dielectric precursor film, a degreasing step of degreasing the dielectric precursor film, and a baking step of baking the dielectric precursor film to form a dielectric film. The drying step includes a first drying step of drying the dielectric precursor film by heating the dielectric precursor film to a temperature lower than a boiling point of a solvent which is a main solvent of the sol and then holding the dielectric precursor film at the temperature for a predetermined period of time, and a second drying step of drying the dielectric precursor film further by reheating the dielectric precursor film and then holding the dielectric precursor film at the temperature for a predetermined period of time.

摘要翻译： 制造电介质膜的方法包括：涂覆由有机金属化合物制成的溶胶并形成电介质前体膜的涂覆步骤，干燥电介质前体膜的干燥步骤，使电介质前体膜脱脂的脱脂步骤和烘烤 烘烤电介质前体膜以形成电介质膜的步骤。 干燥步骤包括：第一干燥步骤，通过将电介质前体膜加热到低于作为溶胶的主要溶剂的溶剂的沸点的温度，然后将电介质前体膜保持在温度为 以及第二干燥步骤，通过再次加热电介质前体膜，然后将电介质前体膜保持在该温度下进一步干燥电介质前体膜一段预定时间。

公开(公告)号：US07579041B2

公开(公告)日：2009-08-25

申请号：US10998195

申请日：2004-11-29

申请人： Akira Kuriki ,  Hironobu Kazama ,  Toshinao Shinbo ,  Koji Sumi

发明人： Akira Kuriki ,  Hironobu Kazama ,  Toshinao Shinbo ,  Koji Sumi

IPC分类号： B05D5/12 ,  H01L41/22

CPC分类号： B41J2/161 ,  B41J2/1628 ,  B41J2/164 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1245 ,  C23C18/1254 ,  C23C18/1283 ,  H01L41/1876 ,  H01L41/318 ,  Y10T29/42

摘要： A method of manufacturing a dielectric film includes a coating step of coating sol made of an organic metal compound and forming a dielectric precursor film, a drying step of drying the dielectric precursor film, a degreasing step of degreasing the dielectric precursor film, and a baking step of baking the dielectric precursor film to form a dielectric film. The drying step includes a first drying step of drying the dielectric precursor film by heating the dielectric precursor film to a temperature lower than a boiling point of a solvent which is a main solvent of the sol and then holding the dielectric precursor film at the temperature for a predetermined period of time, and a second drying step of drying the dielectric precursor film further by reheating the dielectric precursor film and then holding the dielectric precursor film at the temperature for a predetermined period of time.

摘要翻译： 制造电介质膜的方法包括：涂覆由有机金属化合物制成的溶胶并形成电介质前体膜的涂覆步骤，干燥电介质前体膜的干燥步骤，使电介质前体膜脱脂的脱脂步骤和烘烤 烘烤电介质前体膜以形成电介质膜的步骤。 干燥步骤包括：第一干燥步骤，通过将电介质前体膜加热到低于作为溶胶的主要溶剂的溶剂的沸点的温度，然后将电介质前体膜保持在温度为 以及第二干燥步骤，通过再次加热电介质前体膜，然后将电介质前体膜保持在该温度下进一步干燥电介质前体膜一段预定时间。

公开(公告)号：US07992972B2

公开(公告)日：2011-08-09

申请号：US12405984

申请日：2009-03-17

申请人： Toshinao Shinbo ,  Kazushige Hakeda ,  Koji Sumi ,  Tsutomu Nishiwaki

发明人： Toshinao Shinbo ,  Kazushige Hakeda ,  Koji Sumi ,  Tsutomu Nishiwaki

IPC分类号： B41J2/045

CPC分类号： B41J2/1629 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1632 ,  Y10T29/42 ,  Y10T29/49401

摘要： A method of manufacturing a piezoelectric element includes a piezoelectric layer forming step of sequentially and repeatedly performing a heat treatment step of applying a piezoelectric material containing lead to a lower electrode film at a relative humidity in the range of 30% to 50% Rh and then performing a heat treatment to form a piezoelectric precursor film and a crystallization step of firing the piezoelectric precursor film to form a piezoelectric film on the lower electrode film, thereby forming a piezoelectric layer.

摘要翻译： 制造压电元件的方法包括：压电层形成工序，依次重复地进行热处理工序，在相对湿度为30〜50％Rh的范围内，将含有铅的压电材料涂布在下电极膜上， 进行热处理以形成压电前体膜和烧结压电前体膜以在下电极膜上形成压电膜的结晶步骤，从而形成压电层。

公开(公告)号：US20090262169A1

公开(公告)日：2009-10-22

申请号：US12405984

申请日：2009-03-17

申请人： Toshinao Shinbo ,  Kazushige Hakeda ,  Koji Sumi ,  Tsutomu Nishiwaki

发明人： Toshinao Shinbo ,  Kazushige Hakeda ,  Koji Sumi ,  Tsutomu Nishiwaki

IPC分类号： B41J2/045 ,  B21D53/76

CPC分类号： B41J2/1629 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1632 ,  Y10T29/42 ,  Y10T29/49401

摘要： A method of manufacturing a piezoelectric element includes a piezoelectric layer forming step of sequentially and repeatedly performing a heat treatment step of applying a piezoelectric material containing lead to a lower electrode film at a relative humidity in the range of 30% to 50% Rh and then performing a heat treatment to form a piezoelectric precursor film and a crystallization step of firing the piezoelectric precursor film to form a piezoelectric film on the lower electrode film, thereby forming a piezoelectric layer.

摘要翻译： 制造压电元件的方法包括：压电层形成工序，依次重复地进行热处理工序，在相对湿度为30〜50％Rh的范围内，将含有铅的压电材料涂布在下电极膜上， 进行热处理以形成压电前体膜和烧结压电前体膜以在下电极膜上形成压电膜的结晶步骤，从而形成压电层。

公开(公告)号：US06699552B2

公开(公告)日：2004-03-02

申请号：US10122407

申请日：2002-04-16

申请人： Akihisa Wanibe ,  Noriaki Okazawa ,  Yoshinao Miyata ,  Toshinao Shinbo ,  Tetsuya Akasu ,  Hisashi Akachi

发明人： Akihisa Wanibe ,  Noriaki Okazawa ,  Yoshinao Miyata ,  Toshinao Shinbo ,  Tetsuya Akasu ,  Hisashi Akachi

IPC分类号： B65D6528

CPC分类号： H01L21/78 ,  H01L21/3043 ,  Y10T428/15 ,  Y10T428/21 ,  Y10T428/24273

摘要： In order to provide a silicon wafer break pattern that stabilizes the location and shape of the breaks at weak spots of the break pattern and that reduces waste, the through-holes of the break pattern is disposed along a scribe line, a first group of the through-holes are substantially disposed on only a first side of the scribe line, and a second group of the through-holes are substantially disposed on only a second side of the scribe line.

摘要翻译： 为了提供一种硅晶片断裂图案，其使断裂图案的弱点处的断裂位置和形状稳定并且减少浪费，断裂图案的通孔沿着划线设置，第一组 通孔仅基本上设置在划线的第一侧上，第二组通孔基本上仅设置在划线的第二侧。

公开(公告)号：US20070084033A1

公开(公告)日：2007-04-19

申请号：US10582112

申请日：2004-12-09

申请人： Maki Ito ,  Masami Murai ,  Xin-Shan Li ,  Toshinao Shinbo

发明人： Maki Ito ,  Masami Murai ,  Xin-Shan Li ,  Toshinao Shinbo

IPC分类号： H04R17/00 ,  H01G7/00

CPC分类号： B41J2/1629 ,  B41J2/161 ,  B41J2/1646 ,  B41J2002/14241 ,  B41J2002/14419 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49346 ,  Y10T29/49401

摘要： A method of manufacturing an actuator device configured to prevent separation of a vibration plate and to enhance durability and reliability, and a liquid-jet apparatus are provided. The method includes the steps of forming a vibration plate on one surface of a substrate, and forming a piezoelectric element having a lower electrode, a piezoelectric layer, and an upper electrode on the vibration plate. The step of forming a vibration plate at least includes an insulation film forming step of forming an insulation film made of zirconium oxide by forming a zirconium layer on the one surface side of the substrate in accordance with a sputtering method and subjecting the zirconium layer to thermal oxidation by inserting the substrate formed with the zirconium layer to a thermal oxidation furnace heated to a temperature greater than or equal to 700° C. at a speed greater than or equal to 200 mm/min.

摘要翻译： 一种制造致动器装置的方法，该致动器装置被配置为防止振动板的分离并提高耐久性和可靠性，以及液体喷射装置。 该方法包括以下步骤：在基板的一个表面上形成振动板，并在振动板上形成具有下电极，压电层和上电极的压电元件。 形成振动板的步骤至少包括：绝缘膜形成步骤，通过根据溅射方法在基板的一个表面侧上形成锆层，并将锆层热处理形成由氧化锆制成的绝缘膜 通过将形成有锆层的基板通过以大于或等于200mm / min的速度加热至大于或等于700℃的温度的热氧化炉来进行氧化。

公开(公告)号：US20050210645A1

公开(公告)日：2005-09-29

申请号：US11076028

申请日：2005-03-10

申请人： Li Xin-Shan ,  Masami Murai ,  Toshinao Shinbo ,  Maki Ito

发明人： Li Xin-Shan ,  Masami Murai ,  Toshinao Shinbo ,  Maki Ito

IPC分类号： B41J2/16 ,  B41J2/045 ,  B41J2/055 ,  B41J2/135 ,  B41J2/14 ,  B41J2/145 ,  B81C1/00 ,  H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/319 ,  H01L41/39 ,  H02N2/00 ,  H04R17/00

CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1629 ,  B41J2/1632 ,  B41J2/1646 ,  B41J2002/14241 ,  H04R17/00 ,  Y10T29/42 ,  Y10T29/49401

摘要： An object of the present invention is to provide a method of manufacturing an actuator device, and a liquid jet head, which can improve characteristics of a piezoelectric layer constituting piezoelectric elements and can stabilize the characteristics of the piezoelectric layer. A step of forming a vibration plate includes a step of forming an insulation film in order to cause the surface roughness Ra of the insulation film to be in the range of 1 nm to 3 nm: the insulation film being made of zirconia which has been obtained by depositing a zirconium layer, and accordingly by the thermally oxidizing the zirconium layer at a predetermined temperature, and the insulation film constituting the uppermost surface of the vibration plate. In addition, a step of forming a piezoelectric elements includes: a step of applying titanium (Ti) onto a lower electrode by use of a sputtering method, and of forming a seed titanium layer thereon; and a step of forming a piezoelectric precursor film by applying a piezoelectric material onto the seed titanium layer, and of forming a piezoelectric layer by baking, and crystallizing, the piezoelectric precursor layer.

摘要翻译： 本发明的目的在于提供一种能够提高构成压电元件的压电层的特性，并能够稳定压电体层的特性的致动器装置和液体喷射头的制造方法。 形成振动板的步骤包括形成绝缘膜以使绝缘膜的表面粗糙度Ra在1nm至3nm的范围内的步骤：绝缘膜由已获得的氧化锆制成 通过沉积锆层，因此通过在预定温度下热氧化锆层，以及构成振动板最上表面的绝缘膜。 此外，形成压电元件的步骤包括：通过使用溅射法将钛（Ti）施加到下电极上并在其上形成晶种钛层的步骤; 以及通过将压电材料施加到种子钛层上形成压电前体膜的步骤，以及通过烘烤形成压电层并使压电前体层结晶的步骤。

公开(公告)号：US07562451B2

公开(公告)日：2009-07-21

申请号：US10582112

申请日：2004-12-09

申请人： Maki Ito ,  Masami Murai ,  Xin-Shan Li ,  Toshinao Shinbo

发明人： Maki Ito ,  Masami Murai ,  Xin-Shan Li ,  Toshinao Shinbo

IPC分类号： B23P17/00 ,  H01L41/00 ,  H03H9/00

CPC分类号： B41J2/1629 ,  B41J2/161 ,  B41J2/1646 ,  B41J2002/14241 ,  B41J2002/14419 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49346 ,  Y10T29/49401

摘要： A method of manufacturing an actuator device configured to prevent separation of a vibration plate and to enhance durability and reliability, and a liquid-jet apparatus are provided. The method includes the steps of forming a vibration plate on one surface of a substrate, and forming a piezoelectric element having a lower electrode, a piezoelectric layer, and an upper electrode on the vibration plate. The step of forming a vibration plate at least includes an insulation film forming step of forming an insulation film made of zirconium oxide by forming a zirconium layer on the one surface side of the substrate in accordance with a sputtering method and subjecting the zirconium layer to thermal oxidation by inserting the substrate formed with the zirconium layer to a thermal oxidation furnace heated to a temperature greater than or equal to 700° C. at a speed greater than or equal to 200 mm/min.

摘要翻译： 一种制造致动器装置的方法，该致动器装置被配置为防止振动板的分离并提高耐久性和可靠性，以及液体喷射装置。 该方法包括以下步骤：在基板的一个表面上形成振动板，并在振动板上形成具有下电极，压电层和上电极的压电元件。 形成振动板的步骤至少包括：绝缘膜形成步骤，通过根据溅射方法在基板的一个表面侧上形成锆层，并将锆层热处理形成由氧化锆制成的绝缘膜 通过将形成有锆层的基板通过以大于或等于200mm / min的速度加热至大于或等于700℃的温度的热氧化炉来进行氧化。