Removable liners for charged particle beam systems
    1.
    发明授权
    Removable liners for charged particle beam systems 失效
    用于带电粒子束系统的可拆卸衬套

    公开(公告)号:US07462845B2

    公开(公告)日:2008-12-09

    申请号:US11422092

    申请日:2006-06-05

    IPC分类号: H01J37/317

    摘要: A method of improving the performance of a charged beam apparatus. The method including: providing a chamber having an interior surface; providing a pump port for evacuating the chamber; providing a substrate holder within the chamber; forming a charged particle beam within the chamber, the charged beam generated by a source and the charged particle beam striking the substrate; and placing one or more liners in contact with one or more different regions of the interior surface of the chamber, the liners preventing material generated by interaction of the charged beam and the substrate from coating the one or more different regions of the interior surface of the chamber.

    摘要翻译: 一种提高带电束装置性能的方法。 该方法包括:提供具有内表面的室; 提供用于抽空腔室的泵口; 在所述室内提供衬底保持器; 在室内形成带电粒子束,由源产生的带电束和带电粒子束撞击衬底; 并且将一个或多个衬垫放置成与腔室的内表面的一个或多个不同区域接触,衬垫防止由带电束和衬底的相互作用产生的材料涂覆在腔室内表面的一个或多个不同区域 房间。

    REMOVABLE LINERS FOR CHARGED PARTICLE BEAM SYSTEMS
    2.
    发明申请
    REMOVABLE LINERS FOR CHARGED PARTICLE BEAM SYSTEMS 失效
    充电粒子束系统的可拆卸线

    公开(公告)号:US20080258081A1

    公开(公告)日:2008-10-23

    申请号:US12167271

    申请日:2008-07-03

    IPC分类号: H01J37/30 H05H1/00

    摘要: A method of improving the performance of charged beam apparatus. The method including: providing the apparatus, the apparatus comprising: a chamber having an interior surface; a pump port for evacuating the chamber; a substrate holder within the chamber; and a charged particle beam within the chamber, the charged beam generated by a source and the charged particle beam striking the substrate; and positioning one or more liners in contact with one or more different regions of the interior surface of the chamber, the liners preventing material generated by interaction of the charged beam and the substrate from coating the one or more different regions of the interior surface of the chamber.

    摘要翻译: 一种提高带电束装置性能的方法。 该方法包括:提供该装置,该装置包括:具有内表面的腔室; 用于抽空室的泵口; 腔室内的衬底保持器; 以及室内的带电粒子束,由源产生的带电束和带电粒子束撞击衬底; 并且将一个或多个衬垫定位成与腔室的内表面的一个或多个不同区域接触,衬垫防止由带电束和衬底的相互作用产生的材料涂覆在腔室的内表面的一个或多个不同区域 房间。

    Removable liners for charged particle beam systems
    3.
    发明授权
    Removable liners for charged particle beam systems 失效
    用于带电粒子束系统的可拆卸衬套

    公开(公告)号:US07897939B2

    公开(公告)日:2011-03-01

    申请号:US12167271

    申请日:2008-07-03

    IPC分类号: G21K5/00

    摘要: A method of improving the performance of charged beam apparatus. The method including: providing the apparatus, the apparatus comprising: a chamber having an interior surface; a pump port for evacuating the chamber; a substrate holder within the chamber; and a charged particle beam within the chamber, the charged beam generated by a source and the charged particle beam striking the substrate; and positioning one or more liners in contact with one or more different regions of the interior surface of the chamber, the liners preventing material generated by interaction of the charged beam and the substrate from coating the one or more different regions of the interior surface of the chamber.

    摘要翻译: 一种提高带电束装置性能的方法。 该方法包括:提供该装置,该装置包括:具有内表面的腔室; 用于抽空室的泵口; 腔室内的衬底保持器; 以及室内的带电粒子束,由源产生的带电束和带电粒子束撞击衬底; 并且将一个或多个衬垫定位成与腔室的内表面的一个或多个不同区域接触,衬垫防止由带电束和衬底的相互作用产生的材料涂覆在腔室的内表面的一个或多个不同区域 房间。

    TRENCH ISOLATION AND METHOD OF FABRICATING TRENCH ISOLATION
    7.
    发明申请
    TRENCH ISOLATION AND METHOD OF FABRICATING TRENCH ISOLATION 审中-公开
    TRENCH分离和制备TRENCH隔离的方法

    公开(公告)号:US20110278674A1

    公开(公告)日:2011-11-17

    申请号:US13192561

    申请日:2011-07-28

    IPC分类号: H01L27/092 H01L21/8238

    摘要: Trench isolation structure and method of forming trench isolation structures. The structures includes a trench in a silicon region of a substrate, the trench extending from a top surface of the substrate into the silicon region; an ion implantation stopping layer over sidewalls of the trench; a dielectric fill material filling remaining space in the trench, the dielectric fill material not including any materials found in the stopping layer; an N-type dopant species in a first region of the silicon region on a first side of the trench; the N-type dopant species in a first region of the dielectric material adjacent to the first side of the trench; a P-type dopant species in a second region of the silicon region on a second side of the trench; and the P-type dopant species in a second region of the dielectric material adjacent to the second side of the trench.

    摘要翻译: 沟槽隔离结构和形成沟槽隔离结构的方法。 所述结构包括在衬底的硅区域中的沟槽,所述沟槽从所述衬底的顶表面延伸到所述硅区域中; 在沟槽的侧壁上的离子注入停止层; 填充沟槽中的剩余空间的介电填充材料,所述介电填充材料不包括在所述停止层中发现的任何材料; 在所述沟槽的第一侧上的所述硅区域的第一区域中的N型掺杂剂物质; 所述N型掺杂剂物质在所述电介质材料的与所述沟槽的第一侧相邻的第一区域中; 在沟槽的第二侧上的硅区域的第二区域中的P型掺杂物种; 以及邻近沟槽第二侧的电介质材料的第二区域中的P型掺杂剂物质。

    Trench isolation and method of fabricating trench isolation
    10.
    发明授权
    Trench isolation and method of fabricating trench isolation 有权
    沟槽隔离和制造沟槽隔离的方法

    公开(公告)号:US08012848B2

    公开(公告)日:2011-09-06

    申请号:US11839585

    申请日:2007-08-16

    IPC分类号: H01L21/76

    摘要: Trench isolation structure and method of forming trench isolation structures. The structures includes a trench in a silicon region of a substrate, the trench extending from a top surface of the substrate into the silicon region; an ion implantation stopping layer over sidewalls of the trench; a dielectric fill material filling remaining space in the trench, the dielectric fill material not including any materials found in the stopping layer; an N-type dopant species in a first region of the silicon region on a first side of the trench; the N-type dopant species in a first region of the dielectric material adjacent to the first side of the trench; a P-type dopant species in a second region of the silicon region on a second side of the trench; and the P-type dopant species in a second region of the dielectric material adjacent to the second side of the trench.

    摘要翻译: 沟槽隔离结构和形成沟槽隔离结构的方法。 所述结构包括在衬底的硅区域中的沟槽,所述沟槽从所述衬底的顶表面延伸到所述硅区域中; 在沟槽的侧壁上的离子注入停止层; 填充沟槽中的剩余空间的介电填充材料,所述介电填充材料不包括在所述停止层中发现的任何材料; 在所述沟槽的第一侧上的所述硅区域的第一区域中的N型掺杂剂物质; 所述N型掺杂剂物质在所述电介质材料的与所述沟槽的第一侧相邻的第一区域中; 在沟槽的第二侧上的硅区域的第二区域中的P型掺杂物种; 以及邻近沟槽第二侧的电介质材料的第二区域中的P型掺杂剂物质。