Thermal analysis and characterization of layers and multiple layer structures
    1.
    发明授权
    Thermal analysis and characterization of layers and multiple layer structures 失效
    层和多层结构的热分析和表征

    公开(公告)号:US07048434B2

    公开(公告)日:2006-05-23

    申请号:US10247048

    申请日:2002-09-17

    IPC分类号: G01N25/20

    CPC分类号: G01N25/4846

    摘要: Thermally analysis of layers and multiple layer structures used in the semiconductor processing arts is disclosed. A modulated calorimetric analysis may be used to determine a thermal signature that characterizes the chemical properties of a sample of material. The signature may include one or more thermal properties such as heat capacities. The signature may be used to compare and infer the suitability of a material for use in an integrated circuit manufacturing process. A thermal signature for a material that is not known to be suitable for manufacturing integrated circuits may be compared with a thermal signature for a standard material that is known to be suitable in order to determine whether the aforementioned material is suitable. Multiple layer structures may also be analyzed, compared, and inferred, and approaches for determining thermal signatures for any individual layer of the multiple layer structure are disclosed.

    摘要翻译: 公开了半导体加工领域中使用的层和多层结构的热分析。 可以使用调制的量热分析来确定表征材料样品的化学性质的热特征。 签名可以包括一个或多个热性质,例如热容量。 签名可用于比较和推断用于集成电路制造过程中的材料的适用性。 可以将不知道适合于制造集成电路的材料的热学特征与已知适合于确定上述材料是否合适的标准材料的热学特征进行比较。 还可以分析,比较和推断多层结构,并且公开了用于确定多层结构的任何单独层的热特征的方法。

    Wafer level alignment structures using subwavelength grating polarizers
    3.
    发明申请
    Wafer level alignment structures using subwavelength grating polarizers 有权
    使用亚波长光栅偏振器的晶圆级对准结构

    公开(公告)号:US20090002706A1

    公开(公告)日:2009-01-01

    申请号:US11823107

    申请日:2007-06-26

    IPC分类号: G01J4/00

    CPC分类号: G03F9/7076 G03F9/7065

    摘要: In one embodiment, a wafer alignment system, comprises a radiation source to generate radiation, a radiation directing assembly to direct at least a portion of the radiation onto a surface of a wafer, the radiation having a polarization state, an optical analyzer to collect at least a portion of the radiation reflected from the wafer, the wafer including at least a first region having a first grating pattern oriented in a first direction and at least a second region having a second grating pattern oriented in a second direction, different from the first direction.

    摘要翻译: 在一个实施例中,晶片对准系统包括辐射源以产生辐射,辐射导向组件将辐射的至少一部分引导到晶片的表面上,所述辐射具有偏振状态,光学分析器收集在 从晶片反射的辐射的至少一部分,晶片至少包括具有沿第一方向取向的第一光栅图案的第一区域和至少第二区域,具有在第二方向上定向的第二光栅图案,第二区域不同于第一方向 方向。

    Wafer level alignment structures using subwavelength grating polarizers
    5.
    发明授权
    Wafer level alignment structures using subwavelength grating polarizers 有权
    使用亚波长光栅偏振器的晶圆级对准结构

    公开(公告)号:US08004678B2

    公开(公告)日:2011-08-23

    申请号:US11823107

    申请日:2007-06-26

    IPC分类号: G01B11/00 G01J4/00

    CPC分类号: G03F9/7076 G03F9/7065

    摘要: In one embodiment, a wafer alignment system, comprises a radiation source to generate radiation, a radiation directing assembly to direct at least a portion of the radiation onto a surface of a wafer, the radiation having a polarization state, an optical analyzer to collect at least a portion of the radiation reflected from the wafer, the wafer including at least a first region having a first grating pattern oriented in a first direction and at least a second region having a second grating pattern oriented in a second direction, different from the first direction.

    摘要翻译: 在一个实施例中,晶片对准系统包括辐射源以产生辐射,辐射导向组件将辐射的至少一部分引导到晶片的表面上,所述辐射具有偏振状态,光学分析器收集在 从晶片反射的辐射的至少一部分,晶片至少包括具有沿第一方向取向的第一光栅图案的第一区域和至少第二区域,具有在第二方向上定向的第二光栅图案,第二区域不同于第一方向 方向。