公开(公告)号：US08853749B2

公开(公告)日：2014-10-07

申请号：US13362669

申请日：2012-01-31

申请人： Alexander Lidow ,  Jianjun Cao ,  Robert Beach ,  Robert Strittmatter ,  Guang Y. Zhao ,  Alana Nakata

发明人： Alexander Lidow ,  Jianjun Cao ,  Robert Beach ,  Robert Strittmatter ,  Guang Y. Zhao ,  Alana Nakata

IPC分类号： H01L29/76 ,  H01L21/336 ,  H01L29/423 ,  H01L29/778 ,  H01L29/66 ,  H01L21/265 ,  H01L29/20

CPC分类号： H01L21/26586 ,  H01L21/26546 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787

摘要： A self-aligned transistor gate structure that includes an ion-implanted portion of gate material surrounded by non-implanted gate material on each side. The gate structure may be formed, for example, by applying a layer of GaN material over an AlGaN barrier layer and implanting a portion of the GaN layer to create the gate structure that is laterally surrounded by the GaN layer.

摘要翻译： 一种自对准的晶体管栅极结构，其包括在每侧由非植入栅极材料包围的栅极材料的离子注入部分。 栅极结构可以例如通过在AlGaN阻挡层上施加GaN材料层并且注入GaN层的一部分以形成由GaN层横向包围的栅极结构来形成。

公开(公告)号：US20120193688A1

公开(公告)日：2012-08-02

申请号：US13362669

申请日：2012-01-31

申请人： Alexander Lidow ,  Jianjun Cao ,  Robert Beach ,  Robert Strittmatter ,  Guang Y. Zhao ,  Alana Nakata

发明人： Alexander Lidow ,  Jianjun Cao ,  Robert Beach ,  Robert Strittmatter ,  Guang Y. Zhao ,  Alana Nakata

IPC分类号： H01L29/768 ,  H01L21/336

CPC分类号： H01L21/26586 ,  H01L21/26546 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787

摘要： A self-aligned transistor gate structure that includes an ion-implanted portion of gate material surrounded by non-implanted gate material on each side. The gate structure may be formed, for example, by applying a layer of GaN material over an AlGaN barrier layer and implanting a portion of the GaN layer to create the gate structure that is laterally surrounded by the GaN layer.

摘要翻译： 一种自对准的晶体管栅极结构，其包括在每侧由非植入栅极材料包围的栅极材料的离子注入部分。 栅极结构可以例如通过在AlGaN阻挡层上施加GaN材料层并且注入GaN层的一部分以形成由GaN层横向包围的栅极结构来形成。

公开(公告)号：US20120153300A1

公开(公告)日：2012-06-21

申请号：US13325735

申请日：2011-12-14

申请人： Alexander Lidow ,  Jianjun Cao ,  Robert Beach ,  Johan Strydom ,  Alana Nakata ,  Guang Y. Zhao

发明人： Alexander Lidow ,  Jianjun Cao ,  Robert Beach ,  Johan Strydom ,  Alana Nakata ,  Guang Y. Zhao

IPC分类号： H01L29/16 ,  H01L21/76 ,  H01L29/20

CPC分类号： H01L21/743 ,  H01L21/761 ,  H01L21/76283 ,  H01L21/8252 ,  H01L21/8258 ,  H01L23/535 ,  H01L27/0605 ,  H01L27/0688 ,  H01L27/085 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/732 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/7827 ,  H01L29/88 ,  H01L2924/0002 ,  H01L2924/00

摘要： Circuits, structures and techniques for independently connecting a surrounding material in a part of a semiconductor device to a contact of its respective device. To achieve this, a combination of one or more conductive wells that are electrically isolated in at least one bias polarity are provided.

摘要翻译： 用于将半导体器件的一部分中的周围材料独立地连接到其相应器件的触点的电路，结构和技术。 为了实现这一点，提供了以至少一个偏置极性电隔离的一个或多个导电阱的组合。

公开(公告)号：US09607876B2

公开(公告)日：2017-03-28

申请号：US13325735

申请日：2011-12-14

申请人： Alexander Lidow ,  Jianjun Cao ,  Robert Beach ,  Johan Strydom ,  Alana Nakata ,  Guang Y. Zhao

发明人： Alexander Lidow ,  Jianjun Cao ,  Robert Beach ,  Johan Strydom ,  Alana Nakata ,  Guang Y. Zhao

IPC分类号： H01L21/74 ,  H01L21/761 ,  H01L21/762 ,  H01L29/732 ,  H01L29/778 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/06 ,  H01L27/085 ,  H01L29/20

CPC分类号： H01L21/743 ,  H01L21/761 ,  H01L21/76283 ,  H01L21/8252 ,  H01L21/8258 ,  H01L23/535 ,  H01L27/0605 ,  H01L27/0688 ,  H01L27/085 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/732 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/7827 ,  H01L29/88 ,  H01L2924/0002 ,  H01L2924/00

摘要： Circuits, structures and techniques for independently connecting a surrounding material in a part of a semiconductor device to a contact of its respective device. To achieve this, a combination of one or more conductive wells that are electrically isolated in at least one bias polarity are provided.

公开(公告)号：US20100258841A1

公开(公告)日：2010-10-14

申请号：US12756088

申请日：2010-04-07

申请人： Alexander Lidow ,  Robert Beach ,  Guang Y. Zhao ,  Jianjun Cao

发明人： Alexander Lidow ,  Robert Beach ,  Guang Y. Zhao ,  Jianjun Cao

IPC分类号： H01L29/772 ,  H01L21/20 ,  H01L21/306

CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/475 ,  H01L29/66462

摘要： An enhancement-mode GaN transistor, the transistor having a substrate, transition layers, a buffer layer comprised of a III Nitride material, a barrier layer comprised of a III Nitride material, drain and source contacts, a gate containing acceptor type dopant elements, and a diffusion barrier comprised of a III Nitride material between the gate and the buffer layer.

摘要翻译： 增强型GaN晶体管，具有衬底的晶体管，过渡层，由III氮化物材料构成的缓冲层，由III氮化物材料构成的阻挡层，漏极和源极接触，含栅极的受主型掺杂元素，以及 在栅极和缓冲层之间由III型氮化物材料构成的扩散阻挡层。

公开(公告)号：US08436398B2

公开(公告)日：2013-05-07

申请号：US12756088

申请日：2010-04-07

申请人： Alexander Lidow ,  Robert Beach ,  Guang Y. Zhao ,  Jianjun Cao

发明人： Alexander Lidow ,  Robert Beach ,  Guang Y. Zhao ,  Jianjun Cao

IPC分类号： H01L31/102 ,  H01L29/66

CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/475 ,  H01L29/66462

摘要： An enhancement-mode GaN transistor, the transistor having a substrate, transition layers, a buffer layer comprised of a III Nitride material, a barrier layer comprised of a III Nitride material, drain and source contacts, a gate containing acceptor type dopant elements, and a diffusion barrier comprised of a III Nitride material between the gate and the buffer layer.

摘要翻译： 增强型GaN晶体管，具有衬底的晶体管，过渡层，由III氮化物材料构成的缓冲层，由III氮化物材料构成的阻挡层，漏极和源极接触，含栅极的受主型掺杂元素，以及 在栅极和缓冲层之间由III型氮化物材料构成的扩散阻挡层。