Hybrid ridge waveguide
    1.
    发明授权
    Hybrid ridge waveguide 有权
    混合脊波导

    公开(公告)号:US08781283B1

    公开(公告)日:2014-07-15

    申请号:US13745320

    申请日:2013-01-18

    IPC分类号: G02B6/10

    摘要: Embodiments of the invention relate to an electro-optic device comprising a first region of silicon semiconductor material and a second region of III-V semiconductor material. A waveguide of the optical device is formed in part by a ridge in the second region. An optical mode of the waveguide is laterally confined by the ridge of the second region and vertically confined by a vertical boundary included in the first region. The ridge structure further serves as a current confinement structure over the active region of the electro-optic device, eliminating the need for implantation or other structures that are known to present reliability problems during manufacturing. The lack of “voids” and implants in electro-optic devices according to embodiments of the invention leads to better device reliability, process repeatability and improved mechanical strength.

    摘要翻译: 本发明的实施例涉及包括硅半导体材料的第一区域和III-V半导体材料的第二区域的电光器件。 光学器件的波导部分地由第二区域中的脊形成。 波导的光学模式由第二区域的脊横向限制,并且由包括在第一区域中的垂直边界垂直限制。 脊结构还用作电光器件的有源区域上的电流限制结构,消除了在制造期间已知可能出现可靠性问题的植入或其他结构的需要。 根据本发明的实施例,电光装置中缺少“空隙”和植入物导致更好的装置可靠性,工艺重复性和改进的机械强度。

    HYBRID RIDGE WAVEGUIDE
    2.
    发明申请
    HYBRID RIDGE WAVEGUIDE 审中-公开
    混合波导

    公开(公告)号:US20120114001A1

    公开(公告)日:2012-05-10

    申请号:US12943743

    申请日:2010-11-10

    IPC分类号: H01S5/323

    摘要: Embodiments of the invention relate to an electro-optic device comprising a first region of silicon semiconductor material and a second region of III-V semiconductor material. A waveguide of the optical device is formed in part by a ridge in the second region. An optical mode of the waveguide is laterally confined by the ridge of the second region and vertically confined by a vertical boundary included in the first region. The ridge structure further serves as a current confinement structure over the active region of the electro-optic device, eliminating the need for implantation or other structures that are known to present reliability problems during manufacturing. The lack of “voids” and implants in electro-optic devices according to embodiments of the invention leads to better device reliability, process repeatability and improved mechanical strength.

    摘要翻译: 本发明的实施例涉及包括硅半导体材料的第一区域和III-V半导体材料的第二区域的电光器件。 光学器件的波导部分地由第二区域中的脊形成。 波导的光学模式由第二区域的脊横向限制,并且由包括在第一区域中的垂直边界垂直限制。 脊结构还用作电光器件的有源区域上的电流限制结构,消除了在制造期间已知可能出现可靠性问题的植入或其他结构的需要。 根据本发明的实施例,电光装置中缺少“空隙”和植入物导致更好的装置可靠性,工艺重复性和改进的机械强度。

    Hybrid ridge waveguide
    3.
    发明授权
    Hybrid ridge waveguide 有权
    混合脊波导

    公开(公告)号:US08380033B1

    公开(公告)日:2013-02-19

    申请号:US13450328

    申请日:2012-04-18

    IPC分类号: G02B6/10

    摘要: Embodiments of the invention relate to an electro-optic device comprising a first region of silicon semiconductor material and a second region of III-V semiconductor material. A waveguide of the optical device is formed in part by a ridge in the second region. An optical mode of the waveguide is laterally confined by the ridge of the second region and vertically confined by a vertical boundary included in the first region. The ridge structure further serves as a current confinement structure over the active region of the electro-optic device, eliminating the need for implantation or other structures that are known to present reliability problems during manufacturing. The lack of “voids” and implants in electro-optic devices according to embodiments of the invention leads to better device reliability, process repeatability and improved mechanical strength.

    摘要翻译: 本发明的实施例涉及包括硅半导体材料的第一区域和III-V半导体材料的第二区域的电光器件。 光学器件的波导部分地由第二区域中的脊形成。 波导的光学模式由第二区域的脊横向限制,并且由包括在第一区域中的垂直边界垂直限制。 脊结构还用作电光器件的有源区域上的电流限制结构,消除了在制造期间已知可能出现可靠性问题的植入或其他结构的需要。 在根据本发明的实施例的电光装置中缺少空隙和植入物导致更好的装置可靠性,工艺重复性和改进的机械强度。

    INTEGRATED MAGNETIC RECORDING HEAD AND NEAR FIELD LASER
    4.
    发明申请
    INTEGRATED MAGNETIC RECORDING HEAD AND NEAR FIELD LASER 审中-公开
    集成磁记录头和近场激光

    公开(公告)号:US20100128576A1

    公开(公告)日:2010-05-27

    申请号:US12275980

    申请日:2008-11-21

    IPC分类号: G11B11/00

    摘要: Apparatuses and methods for making and using laser-assisted magnetic recording devices. A slider for use in a magnetic recording apparatus in accordance with one or more embodiments of the present invention comprises a magnetic recording element having a first pole and a second pole, a magnetic reader, and a laser resonator integrally formed on said slider, having an optical emission point of said resonator positioned between the first pole and the second pole of the magnetic recording element; wherein the laser resonator comprises a semiconductor gain media positioned between a first reflector and a near field optical element having a nonzero optical reflection to the semiconductor gain media.

    摘要翻译: 用于制造和使用激光辅助磁记录装置的装置和方法。 根据本发明的一个或多个实施例的用于磁记录装置的滑动件包括具有第一极和第二极的磁记录元件,磁读取器和整体地形成在所述滑块上的激光谐振器,具有 所述谐振器的光发射点位于磁记录元件的第一极和第二极之间; 其中激光谐振器包括位于第一反射器和具有对半导体增益介质的非零光学反射的近场光学元件之间的半导体增益介质。

    Heterogeneous semiconductor photonic integrated circuit with multiple offset heights
    5.
    发明授权
    Heterogeneous semiconductor photonic integrated circuit with multiple offset heights 有权
    具有多个偏移高度的非均匀半导体光子集成电路

    公开(公告)号:US08891913B1

    公开(公告)日:2014-11-18

    申请号:US13546803

    申请日:2012-07-11

    IPC分类号: G02B6/00 G02F1/035

    摘要: Embodiments of the invention describe heterogeneous photonic integrated circuits (PIC) wherein a first silicon region is separated from the heterogeneous semiconductor material by a first distance, and a second silicon region is separated from the heterogeneous semiconductor material by a second distance greater than the first distance.Thus embodiments of the invention may be described as, in heterogeneous regions of a heterogeneous PIC, silicon waveguides using multiple heights of the silicon waveguide, or other structures with multiple offset heights between silicon and heterogeneous materials (as described herein).

    摘要翻译: 本发明的实施例描述了异质光子集成电路(PIC),其中第一硅区域与异质半导体材料分离第一距离,并且第二硅区域与异质半导体材料分离大于第一距离的第二距离 。 因此,可以将本发明的实施例描述为在异质PIC的异质区域中,使用硅波导的多个高度的硅波导或者硅和异种材料之间的多个偏移高度的其他结构(如本文所述)。

    Mirror and cavity designs for sampled grating distributed bragg reflector lasers
    6.
    发明授权
    Mirror and cavity designs for sampled grating distributed bragg reflector lasers 有权
    用于采样光栅分布式布拉格反射器激光器的镜和腔设计

    公开(公告)号:US06590924B2

    公开(公告)日:2003-07-08

    申请号:US09848791

    申请日:2001-05-04

    IPC分类号: H01S308

    摘要: A tunable laser comprised of a gain section for creating a light beam by spontaneous emission over a bandwidth, a phase section for controlling the light beam around a center frequency of the bandwidth, a cavity for guiding and reflecting the light beam, a front mirror bounding an end of the cavity, and a back mirror bounding an opposite end of the cavity. The back mirror has a &kgr;effB approximately equal to &agr;Tune, where &kgr;effB is an effective coupling constant and &agr;Tune is the maximum amount of propagation loss anticipated for an amount of peak tuning required, and a length of the back mirror is made to produce greater than approximately 80% reflectivity.

    摘要翻译: 一种可调谐激光器,包括用于通过带宽上的自发发射产生光束的增益部分,用于控制带宽中心频率附近的光束的相位部分,用于引导和反射光束的空腔, 空腔的一端,以及限定空腔相对端的后视镜。 后视镜具有大约等于αTune的kappaeffB,其中kappaeffB是有效耦合常数,αTune是所需的峰值调谐量预期的最大传播损耗量,并且使后视镜的长度大于大约 80%的反射率。

    Tunable laser source with monolithically integrated interferometric optical modulator
    7.
    发明授权
    Tunable laser source with monolithically integrated interferometric optical modulator 有权
    具有单片集成干涉光学调制器的可调谐激光源

    公开(公告)号:US07633988B2

    公开(公告)日:2009-12-15

    申请号:US10909188

    申请日:2004-07-30

    IPC分类号: H01S5/00

    摘要: A monolithically-integrated semiconductor optical transmitter that can index tune to any transmission wavelength in a given range, wherein the range is larger than that achievable by the maximum refractive index tuning allowed by the semiconductor material itself (i.e. Δλ/λ>Δn/n). In practice, this tuning range is >15 nm. The transmitter includes a Mach-Zehnder (MZ) modulator monolithically integrated with a widely tunable laser and a semiconductor optical amplifier (SOA). By using an interferometric modulation, the transmitter can dynamically control the chirp in the resulting modulated signal over the wide tuning range of the laser.

    摘要翻译: 一种单片集成的半导体光发射器,其可以在给定范围内调谐到任何透射波长,其中该范围大于由半导体材料本身允许的最大折射率调谐(即Deltalλ/Δttan/ n)可实现的范围, 。 实际上,此调谐范围> 15 nm。 发射机包括与广泛可调激光器和半导体光放大器(SOA)单片集成的马赫 - 曾德(MZ)调制器。 通过使用干涉式调制,发射机可以在激光器的宽调谐范围内动态地控制得到的调制信号中的啁啾声。

    Manufacturable sampled grating mirrors
    9.
    发明授权
    Manufacturable sampled grating mirrors 有权
    可制造的采样光栅镜

    公开(公告)号:US07643532B2

    公开(公告)日:2010-01-05

    申请号:US11180347

    申请日:2005-07-13

    IPC分类号: H01S3/08

    摘要: The present invention relates to the tailoring the reflectivity spectrum of a sampled-grating distributed Bragg reflector (SGDBR) by applying digital sampling theory to choose the way each reflector is sampled. The resulting mirror covers a larger wavelength span and has peaks with a larger, more uniform, coupling constant (κ) than the mirrors produced using conventional approaches. The improved mirror also retains the benefits of the sample grating approach. Additionally, most of the embodiments are relatively simple to manufacture.

    摘要翻译: 本发明涉及通过应用数字采样理论来选择每个反射体被采样的方式来定制采样光栅分布布拉格反射器(SGDBR)的反射光谱。 所得到的镜面覆盖更大的波长跨度,并且具有比使用常规方法产生的反射镜更大,更均匀的耦合常数(κ)的峰值。 改进的镜子还保留了样品光栅方法的优点。 另外,大多数实施例相对简单的制造。

    Manufacturable sampled grating mirrors
    10.
    发明授权
    Manufacturable sampled grating mirrors 有权
    可制造的采样光栅镜

    公开(公告)号:US06937638B2

    公开(公告)日:2005-08-30

    申请号:US09879821

    申请日:2001-06-11

    摘要: The present invention relates to the tailoring the reflectivity spectrum of a SGDBR by applying digital sampling theory to choose the way each reflector is sampled. The resulting mirror covers a larger wavelength span and has peaks with a larger, more uniform, coupling constant (κ) than the mirrors produced using conventional approaches. The improved mirror also retains the benefits of the sample grating approach. Additionally, most of the embodiments are relatively simple to manufacture.

    摘要翻译: 本发明涉及通过应用数字采样理论来选择每个反射体被采样的方式来定制SGDBR的反射光谱。 所得到的镜面覆盖更大的波长跨度,并且具有比使用常规方法产生的反射镜更大,更均匀的耦合常数(κ)的峰值。 改进的镜子还保留了样品光栅方法的优点。 另外,大多数实施例相对简单的制造。